Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula

(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2d)X.sub.d).sub.(n1),

wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR.sub.3]; further wherein each R of the [SiR.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group.

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formula

(SiH.sub.a(NR.sub.2).sub.bX.sub.c).sub.(n+2)N.sub.n(SiH.sub.(2d)X.sub.d).sub.(n1),

wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR.sub.3]; further wherein each R of the [SiR.sub.3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C.sub.1-C.sub.4 saturated or unsaturated hydrocarbyl group, a C.sub.1-C.sub.4 saturated or unsaturated alkoxy group, or an amino group [NR.sup.1R.sup.2] with each R.sup.1 and R.sup.2 being further selected from H or a C.sub.1-C.sub.6 linear or branched, saturated or unsaturated hydrocarbyl group.

Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800 C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H.sub.3PO.sub.4, showing good etch selectivity.

Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800 C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H.sub.3PO.sub.4, showing good etch selectivity.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2NSiH.sub.2X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH.sub.3).sub.2NSiH.sub.2X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C.sub.4-C.sub.10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Total ammonia nitrogen in a volume of sludge in an aeration tank is measured and compared to a target ammonia nitrogen setpoint to calculate an airflow target for adjusting the measured total ammonia nitrogen toward the target ammonia nitrogen setpoint. The airflow target may be an airflow rate or, for an SBR, an airflow duration, and airflow into the aeration tank is adjusted according to the airflow target. A target solids retention time setpoint is also calculated from information relating to the airflow target and the solids retention time is adjusted toward the target solids retention time setpoint. The waste activated sludge flow rate for the aeration tank may be adjusted to adjust the solids retention time for the aeration tank toward the target solids retention time setpoint.

An economical method for recovering phosphate or phosphate and nitrogen from liquid streams. A liquid containing phosphate is introduced into a culture of autotrophic microorganisms in the presence of natural or artificial light, thereby producing a liquid effluent with elevated pH and reduced alkalinity. The alkalinity is reduced through the consumption of bicarbonate/carbonate by the autotrophic microorganisms. The effluent is then chemically treated with low-cost chemicals to provide Ca.sup.++ or Mg.sup.++ ions necessary to form a phosphate precipitate such as calcium phosphate or magnesium-ammonium-phosphate (MAP). The autotrophic microorganisms can be cultivated in ponds, lagoons, or photobioreactors. The pH of the culture is adjustable within a preferred range of 7.5 to 10.5 by adjusting the photobioreactor operation. The process includes an economical flotation separator for solid, liquid, gas separation and a means of concentrating ammonia nitrogen that may also be removed during the process of phosphate reclamation.

An economical method for recovering phosphate or phosphate and nitrogen from liquid streams. A liquid containing phosphate is introduced into a culture of autotrophic microorganisms in the presence of natural or artificial light, thereby producing a liquid effluent with elevated pH and reduced alkalinity. The alkalinity is reduced through the consumption of bicarbonate/carbonate by the autotrophic microorganisms. The effluent is then chemically treated with low-cost chemicals to provide Ca.sup.++ or Mg.sup.++ ions necessary to form a phosphate precipitate such as calcium phosphate or magnesium-ammonium-phosphate (MAP). The autotrophic microorganisms can be cultivated in ponds, lagoons, or photobioreactors. The pH of the culture is adjustable within a preferred range of 7.5 to 10.5 by adjusting the photobioreactor operation. The process includes an economical flotation separator for solid, liquid, gas separation and a means of concentrating ammonia nitrogen that may also be removed during the process of phosphate reclamation.