A method of controlled production of luminescent diamond particles exhibiting luminescence in selected specific spectral ranges is provided. The method comprises taking diamond particles containing dopant atoms in the diamond core, irradiating the particles with high energy radiation, and annealing the irradiated diamond particles at a target temperature in the temperature range of about 1400° C.-2200° C. to form luminescent diamond particles where the specific spectral range of luminescence is controlled by the target temperature of the annealing process, the irradiation dose, and the type of dopant atoms. Duration of the annealing and the temperature ramp up and ramp down times should be short enough to minimize or prevent significant graphitization of the particles. Duration of the temperature ramp up time should be short enough to minimize formation of color centers that might form at temperatures below the target temperature.

A method of producing a fluorescent nanodiamond exhibiting a zero phonon line (ZPL) for NV.sup.0 and/or NV.sup.− on its the fluorescence emission wavelength spectrum. The method includes a detonation step of exploding at least one type of explosive in an airtight container to obtain a nanodiamond raw material, a first annealing step of annealing, at a temperature from 1000° C. to 1600° C., the nanodiamond raw material or a nanodiamond which is obtained by removing sp2 carbon through strong acid treatment, ozone treatment, or gas-phase oxidation of the nanodiamond raw material, a vacancy forming step of creating vacancies on the nanodiamond by irradiating the nanodiamond with an ion beam or an electron beam after the first annealing step, and a second annealing step of annealing, at a temperature from 600° C. to 900° C., the nanodiamond containing vacancies to form Nitrogen-Vacancy (NV) centers.

A method of producing a fluorescent nanodiamond exhibiting a zero phonon line (ZPL) for NV.sup.0 and/or NV.sup.− on its the fluorescence emission wavelength spectrum. The method includes a detonation step of exploding at least one type of explosive in an airtight container to obtain a nanodiamond raw material, a first annealing step of annealing, at a temperature from 1000° C. to 1600° C., the nanodiamond raw material or a nanodiamond which is obtained by removing sp2 carbon through strong acid treatment, ozone treatment, or gas-phase oxidation of the nanodiamond raw material, a vacancy forming step of creating vacancies on the nanodiamond by irradiating the nanodiamond with an ion beam or an electron beam after the first annealing step, and a second annealing step of annealing, at a temperature from 600° C. to 900° C., the nanodiamond containing vacancies to form Nitrogen-Vacancy (NV) centers.

The present invention relates to a fluorescent nanodiamond preparing method including a first operation of preparing nanodiamonds having an average particle diameter of 10 nm or less, a second operation of implanting plasma ions into the nanodiamonds, a third operation of heat-treating the nanodiamonds implanted with the plasma ions under a vacuum or inert gas atmosphere, a fourth operation of oxygen treatment of the heat-treated nanodiamonds under a gas atmosphere including oxygen to oxidize the surfaces of the nanodiamonds, a fifth operation of acid-treating the oxygen-treated nanodiamonds, a sixth operation of centrifuging and cleaning the acid-treated nanodiamonds, and a seventh operation of drying the cleaned nanodiamonds, wherein, in the second operation, the plasma ions are implanted at an incident ion dose of 10.sup.13 ions/cm.sup.2 or more and 10.sup.20 ions/cm.sup.2 or less.

The present invention relates to a fluorescent nanodiamond preparing method including a first operation of preparing nanodiamonds having an average particle diameter of 10 nm or less, a second operation of implanting plasma ions into the nanodiamonds, a third operation of heat-treating the nanodiamonds implanted with the plasma ions under a vacuum or inert gas atmosphere, a fourth operation of oxygen treatment of the heat-treated nanodiamonds under a gas atmosphere including oxygen to oxidize the surfaces of the nanodiamonds, a fifth operation of acid-treating the oxygen-treated nanodiamonds, a sixth operation of centrifuging and cleaning the acid-treated nanodiamonds, and a seventh operation of drying the cleaned nanodiamonds, wherein, in the second operation, the plasma ions are implanted at an incident ion dose of 10.sup.13 ions/cm.sup.2 or more and 10.sup.20 ions/cm.sup.2 or less.

A method of processing a polycrystalline diamond element may include assembling a polycrystalline diamond element, a liner, and a protective leaching cup such that the liner is disposed between the polycrystalline diamond element and the protective leaching cup and a seal region of the protective leaching cup abuts a surface portion of the polycrystalline diamond element. The method may also include exposing a portion of the polycrystalline diamond element to a leaching agent. A method of processing a polycrystalline diamond element may also include surrounding a portion of a polycrystalline diamond element with a liner, inserting the liner and the polycrystalline diamond element into a protective leaching cup such that the liner is disposed between the polycrystalline diamond element and the protective leaching cup, and exposing another portion of the polycrystalline diamond element to a leaching agent.

A method of processing a polycrystalline diamond element may include assembling a polycrystalline diamond element, a liner, and a protective leaching cup such that the liner is disposed between the polycrystalline diamond element and the protective leaching cup and a seal region of the protective leaching cup abuts a surface portion of the polycrystalline diamond element. The method may also include exposing a portion of the polycrystalline diamond element to a leaching agent. A method of processing a polycrystalline diamond element may also include surrounding a portion of a polycrystalline diamond element with a liner, inserting the liner and the polycrystalline diamond element into a protective leaching cup such that the liner is disposed between the polycrystalline diamond element and the protective leaching cup, and exposing another portion of the polycrystalline diamond element to a leaching agent.

An electrode comprising synthetic high-pressure high-temperature diamond material, the diamond material comprising a substitutional boron concentration of between 1×10.sup.20 and 5×10.sup.21 atoms/cm.sup.3 and a nitrogen concentration of no more than 10.sup.19 atoms/cm.sup.3. The electrode has a ΔE.sub.3/4-1/4 as measured with respect to a saturated calomel reference electrode in an aqueous solution containing 0.1 M KNO.sub.3 and 1 mM of Ru(NH.sub.3).sub.6.sup.3+ selected any of less than 70 mV, less than 68 mV, less than 66 mV, and less than 64 mV, and/or a peak to peak separation ΔE.sub.p as measured with respect to a saturated calomel reference electrode in an aqueous solution containing 0.1 M KNO.sub.3 and 1 mM of Ru(NH.sub.3).sub.6.sup.3+ selected any of less than 70 mV, less than 68 mV, less than 66 mV, and less than 64 mV.

An electrode comprising synthetic high-pressure high-temperature diamond material, the diamond material comprising a substitutional boron concentration of between 1×10.sup.20 and 5×10.sup.21 atoms/cm.sup.3 and a nitrogen concentration of no more than 10.sup.19 atoms/cm.sup.3. The electrode has a ΔE.sub.3/4-1/4 as measured with respect to a saturated calomel reference electrode in an aqueous solution containing 0.1 M KNO.sub.3 and 1 mM of Ru(NH.sub.3).sub.6.sup.3+ selected any of less than 70 mV, less than 68 mV, less than 66 mV, and less than 64 mV, and/or a peak to peak separation ΔE.sub.p as measured with respect to a saturated calomel reference electrode in an aqueous solution containing 0.1 M KNO.sub.3 and 1 mM of Ru(NH.sub.3).sub.6.sup.3+ selected any of less than 70 mV, less than 68 mV, less than 66 mV, and less than 64 mV.

The present invention is to provide an explosive composition comprising at least one explosive and at least one heteroatom compound, the heteroatom compound comprising at least one heteroatom selected from the group consisting of B, P, Si, S, Cr, Sn, Al, Ge, Li, Na, K, Cs, Mg, Ca, Sr, Ba, Ti, Zr, V, Nb, Ta, Mo, W, Mn, Ni, Cu, Ag, Cd, Hg, Ga, In, Tl, As, Sb, Bi, Se, Te, Co, Xe, F, Y, and lanthanoids.