C01B32/907

Boron-stabilized type-I and type-II carbon clathrates

The present invention provides type-I and II carbon-based clathrate compounds stabilized by boron, including a boron-substituted, carbon-based framework with guest atoms encapsulated within the clathrate lattice. In one embodiment, the invention provides a carbon-based type-I clathrate compound of the formula Ca.sub.8B.sub.xC.sub.46-x.

DOPED HIGH PURITY POLYSILOCARB MATERIALS, APPLICATIONS AND PROCESSES

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

DOPED HIGH PURITY POLYSILOCARB MATERIALS, APPLICATIONS AND PROCESSES

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Vanadium silicon carbide film, vanadium silicon carbide film coated member, and manufacturing method of vanadium silicon carbide film coated member

A vanadium silicon carbide film contains vanadium, silicon, and carbon, in which the total of a vanadium element concentration, a silicon element concentration, and a carbon element concentration in the film is 90 at % or more.

Vanadium silicon carbide film, vanadium silicon carbide film coated member, and manufacturing method of vanadium silicon carbide film coated member

A vanadium silicon carbide film contains vanadium, silicon, and carbon, in which the total of a vanadium element concentration, a silicon element concentration, and a carbon element concentration in the film is 90 at % or more.

ASYMMETRICAL OUT-OF-PLANE-ORDERED MULTICOMPONENT MAX PHASE AND MXENE, AND METHODS FOR MANUFACTURING THE SAME

A MAX phase has a layered structure of M(n+1)AXn including a plurality of transition metal layers (where n is a natural number, and n and n+1 represent a number of layers). M includes at least two transition metal elements. X includes nitrogen or carbon. A includes at least a first element and a second element, which are different from each other and selected from a Group 13 element, a Group 14 element, a Group 15 element, and a Group 16 element. A difference in atomic radii of the first element and the second element is greater than or equal to 0.1 . A first transition metal layer and a second transition metal layer corresponding to opposite outer layers among the transition metal layers have different compositions so that the MAX phase and a MXene obtained from the MAX phase have an asymmetrical out-of-plane-ordered structure.

ASYMMETRICAL OUT-OF-PLANE-ORDERED MULTICOMPONENT MAX PHASE AND MXENE, AND METHODS FOR MANUFACTURING THE SAME

A MAX phase has a layered structure of M(n+1)AXn including a plurality of transition metal layers (where n is a natural number, and n and n+1 represent a number of layers). M includes at least two transition metal elements. X includes nitrogen or carbon. A includes at least a first element and a second element, which are different from each other and selected from a Group 13 element, a Group 14 element, a Group 15 element, and a Group 16 element. A difference in atomic radii of the first element and the second element is greater than or equal to 0.1 . A first transition metal layer and a second transition metal layer corresponding to opposite outer layers among the transition metal layers have different compositions so that the MAX phase and a MXene obtained from the MAX phase have an asymmetrical out-of-plane-ordered structure.

Acoustic wave device with wurtzite based piezoelectric layer

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Acoustic wave device with wurtzite based piezoelectric layer

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Conductive two-dimensional particle-containing composition, conductive film, and method of producing conductive two-dimensional particle-containing composition
12509592 · 2025-12-30 · ·

A conductive two-dimensional particle-containing composition including: a conductive two-dimensional particle of a layered material including one or a plurality of layers; a dispersion medium having a relative permittivity greater than that of water; and a fluorine element and an oxygen element on a surface of the conductive two-dimensional particle, wherein the one or plurality of layers includes a layer body represented by: M.sub.mX.sub.n, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is 1 to 4, and m is more than n and 5 or less, and a modifier or terminal T existing on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom.