A SiOC composite material in microparticulate form, wherein the microparticles are formed, in whole or in part, of an amorphous SiOC matrix with Si ranging from 20 wt % to 60 wt %, O from 20 wt % to 40 wt % and C from 10 wt % to 50 wt %, based on the total weight of the SiOC matrix, wherein amorphous or crystallized silicon particles are embedded within the SiOC matrix and wherein the microparticles are of core/coating structure with a core formed of the amorphous SiOC matrix and coated with at least one amorphous carbon layer; and to a method for producing such SiOC composite material. It also relates to an electrode active material, an electrode and a battery, especially a lithium-ion battery, including the aforementioned SiOC composite material.

A SiOC composite material in microparticulate form, wherein the microparticles are formed, in whole or in part, of an amorphous SiOC matrix with Si ranging from 20 wt % to 60 wt %, O from 20 wt % to 40 wt % and C from 10 wt % to 50 wt %, based on the total weight of the SiOC matrix, wherein amorphous or crystallized silicon particles are embedded within the SiOC matrix and wherein the microparticles are of core/coating structure with a core formed of the amorphous SiOC matrix and coated with at least one amorphous carbon layer; and to a method for producing such SiOC composite material. It also relates to an electrode active material, an electrode and a battery, especially a lithium-ion battery, including the aforementioned SiOC composite material.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M′.sub.2M″nX.sub.n+1, such that each X is positioned within an octahedral array of M′ and M″; wherein M′ and M″ each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M′ atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M″ atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M″ atoms are sandwiched between the two-dimensional outer arrays of M′ atoms within the two-dimensional army of crystal cells.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M′.sub.2M″nX.sub.n+1, such that each X is positioned within an octahedral array of M′ and M″; wherein M′ and M″ each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M′ atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M″ atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M″ atoms are sandwiched between the two-dimensional outer arrays of M′ atoms within the two-dimensional army of crystal cells.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

The present invention relates to an intermediate for preparing porous silicon oxycarbide, a method of preparing the same, and a lithium secondary battery including porous silicon oxycarbide prepared from the same as a negative electrode active material. According to the present invention, since an intermediate prepared by adding a polyhedral oligomeric silsesquioxane (POSS) to a reaction mixture for preparing silicon oxycarbide, which is composed of a polysiloxane polymer and an aromatic compound, is pyrolyzed to prepare porous silicon oxycarbide (SiOC), although the content of a free carbon region is lower compared to conventional silicon oxycarbide, the cage structure of the POSS is maintained in the pyrolysis to form many pores uniformly distributed in the SiOC matrix, and thus rapid diffusion of electrolyte ions is possible, and because the contents of SiO.sub.3C and SiO.sub.2C.sub.2 in the SiOC matrix are increased, a reversible capacity in the Si—O—C phase can be enhanced.

The present invention relates to an intermediate for preparing porous silicon oxycarbide, a method of preparing the same, and a lithium secondary battery including porous silicon oxycarbide prepared from the same as a negative electrode active material. According to the present invention, since an intermediate prepared by adding a polyhedral oligomeric silsesquioxane (POSS) to a reaction mixture for preparing silicon oxycarbide, which is composed of a polysiloxane polymer and an aromatic compound, is pyrolyzed to prepare porous silicon oxycarbide (SiOC), although the content of a free carbon region is lower compared to conventional silicon oxycarbide, the cage structure of the POSS is maintained in the pyrolysis to form many pores uniformly distributed in the SiOC matrix, and thus rapid diffusion of electrolyte ions is possible, and because the contents of SiO.sub.3C and SiO.sub.2C.sub.2 in the SiOC matrix are increased, a reversible capacity in the Si—O—C phase can be enhanced.