Patent classifications
C01B32/914
Tin-containing precursors and methods of depositing tin-containing films
Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.
Tin-containing precursors and methods of depositing tin-containing films
Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.
Method of manufacturing tantalum carbide coating layer using chemical vapor deposition and tantalum carbide manufactured using the same
A method of manufacturing a material including tantalum carbide (TaC) with a particularly low impurity content, and a TaC material formed by the method are provided. The method includes preparing a base material, and forming a TaC coating layer on a surface of the base material at a temperature of 1,600° C. to 2,500° C.
Method of manufacturing tantalum carbide coating layer using chemical vapor deposition and tantalum carbide manufactured using the same
A method of manufacturing a material including tantalum carbide (TaC) with a particularly low impurity content, and a TaC material formed by the method are provided. The method includes preparing a base material, and forming a TaC coating layer on a surface of the base material at a temperature of 1,600° C. to 2,500° C.
Cobalt carbide-based catalyst for direct preparation of olefin from synthesis gas, preparation method therefor and application thereof
A cobalt carbide-based catalyst for direct production of olefin from synthesis gas, a preparation method therefor and application thereof are disclosed. The method for preparing the catalyst comprises the following steps: 1) mixing a cobalt source with water, or mixing a cobalt source, an electron promoter and water to obtain a first solution; and mixing a precipitant with water to obtain a second solution; 2) adding the first solution and the second solution to water, or water and a structure promoter for precipitation, crystallizing, separating, drying and calcination; and 3) reducing a solid obtained in Step 2) in a reducing atmosphere, and then carbonizing in a carbonizing atmosphere. The prepared catalyst has high activity and high selectivity to olefins for direct production of olefins via syngas conversion.
Cobalt carbide-based catalyst for direct preparation of olefin from synthesis gas, preparation method therefor and application thereof
A cobalt carbide-based catalyst for direct production of olefin from synthesis gas, a preparation method therefor and application thereof are disclosed. The method for preparing the catalyst comprises the following steps: 1) mixing a cobalt source with water, or mixing a cobalt source, an electron promoter and water to obtain a first solution; and mixing a precipitant with water to obtain a second solution; 2) adding the first solution and the second solution to water, or water and a structure promoter for precipitation, crystallizing, separating, drying and calcination; and 3) reducing a solid obtained in Step 2) in a reducing atmosphere, and then carbonizing in a carbonizing atmosphere. The prepared catalyst has high activity and high selectivity to olefins for direct production of olefins via syngas conversion.
METAL CARBIDES AND METHODS OF MAKING THE SAME
The present disclosure relates to a method for producing a metal carbide, where the method includes thermally treating a molecular precursor in an oxygen-free environment, such that the treating produces the metal carbide and the molecular precursor includes
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where M is the metal of the metal carbide, N* includes nitrogen or a nitrogen-containing functional group, and x is between zero and six, inclusively.
FIBER WITH ELEMENTAL ADDITIVE(S) AND METHOD OF MAKING
A multi-composition fiber is provided including a primary fiber material and an elemental additive material deposited on grain boundaries between adjacent crystalline domains of the primary fiber material. A method of making a multi-composition fiber is also provided, which includes providing a precursor laden environment, and promoting fiber growth using laser heating. The precursor laden environment includes a primary precursor material and an elemental precursor material.
FIBER WITH ELEMENTAL ADDITIVE(S) AND METHOD OF MAKING
A multi-composition fiber is provided including a primary fiber material and an elemental additive material deposited on grain boundaries between adjacent crystalline domains of the primary fiber material. A method of making a multi-composition fiber is also provided, which includes providing a precursor laden environment, and promoting fiber growth using laser heating. The precursor laden environment includes a primary precursor material and an elemental precursor material.
MXENE-BASED VOICE COILS AND ACTIVE ACOUSTIC DEVICES
The present disclosure is directed to electroacoustical devices comprising patterned MXene compositions on biaxially oriented polymer substrates and methods of making and using the same.