A method for treatment of a hexachlorodisilane and its hydrolyzed product is disclosed. It comprises adding a hexachlorodisilane or its hydrolyzed product into a sulfuric acid solution for reaction.

The present invention relates to a process for producing of polycrystalline silicon, and the method includes (1) preparing a silicon-containing gas; (2) storing the silicon-containing gas in a storage tank; (3) depositing polycrystalline silicon by injecting the silicon-containing gas stored in the storage tank to a CVD reactor; (4) treating an off-gas emitted in the depositing step; and (5) injecting the gas treated in the treating step to the storage tank.

Methods of synthesizing SiH containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Methods of synthesizing SiH containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

A method for making a halosilane compound comprises the steps of: (a) providing a first halosilane compound, (b) providing a reaction vessel containing a halide source disposed inside, (c) feeding the halosilane compound into the reaction vessel, and (d) collecting a product stream from the reaction vessel, where the product stream contains a second halosilane.

A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.

The invention relates to a method for purifying halogenated oligosilanes in the form of a pure compound or a mixture of compounds with respectively at least one direct SiSi bond, the substituents thereof being exclusively made from halogen or from halogen and hydrogen and in the composition thereof, the atomic ratio of the substituents:silicon is at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and by isolating the halogenated oligosilanes with improved purity. According to prior art, halogenated monosilanes such as HSiCl.sub.3 are purified by treating with organic compounds, preferably polymers, containing amino groups, and are separated from said mixtures. Based on the contained amino groups, said method can not be used for halogenated oligosilanes as the secondary reactions lead to a decomposition of the products. The novel method is used to provide the desired products in a high yield and purity without using the amino groups.

The invention relates to a process bit hydrogenating silicon tetrachloride in a reactor, wherein a reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature between 850 C. and 1600 C. by means of at least one heating element, which comprises a graphite surface, wherein the temperature of the heating element is between 850 C. and 1600 C. The process is characterized in that a nitrogen compound is added to the reactant gas in a substance amount fraction of 0.1 to 70% based on hydrogen.

Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

A SiH-free vinyldisilane compound, which is free of (lacks) a silicon-bonded hydrogen atom. The use of the SiH-free vinyldisilane compound, or a collection of such compounds, as a starting material or precursor for synthesizing or making silicon-heteroatom compounds. The silicon-heteroatom compounds synthesized therefrom; films of and devices containing the silicon-heteroatom compounds; methods of making the SiH-free vinyldisilane compound, silicon-heteroatom compounds, films, and devices; and uses of the SiH-free vinyldisilanes, silicon-heteroatom compounds, films, and devices.