The present disclosure includes a composition for forming a silicon-containing film on a substrate, comprising: a silicon precursor and a nitrogen precursor. The silicon-containing film is an elemental silicon film, a silicon carbon film, a silicon nitrogen film, or a silicon oxygen film. The substrate is a semiconductor material. The silicon precursor comprises trichlorodisilane. The trichlorodisilane is 1,1,1-trichlorodisilane.

The present disclosure includes a composition for forming a silicon-containing film on a substrate, comprising: a silicon precursor and a nitrogen precursor. The silicon-containing film is an elemental silicon film, a silicon carbon film, a silicon nitrogen film, or a silicon oxygen film. The substrate is a semiconductor material. The silicon precursor comprises trichlorodisilane. The trichlorodisilane is 1,1,1-trichlorodisilane.

Generally unusable or difficultly useable dusts of ultrahigh purity silicon can be used to produce chlorosilanes under reasonable reaction conditions by employing a catalyst containing one or more of Co, Mo, W. The process may be incorporated into an integral plant for the production of polycrystalline silicon.

A method of preparing pentachlorodisilane is disclosed. The method comprises partially reducing hexachlorodisilane with a metal hydride compound to give a reaction product comprising pentachlorodisilane. The method further comprises purifying the reaction product to give a purified reaction product comprising the pentachlorodisilane. The purified reaction product comprising pentachlorodisilane formed in accordance with the method is also disclosed.

A method of preparing pentachlorodisilane is disclosed. The method comprises partially reducing hexachlorodisilane with a metal hydride compound to give a reaction product comprising pentachlorodisilane. The method further comprises purifying the reaction product to give a purified reaction product comprising the pentachlorodisilane. The purified reaction product comprising pentachlorodisilane formed in accordance with the method is also disclosed.

The invention relates to a process for the production of monosilanes of formula H4-nSiCln with n being 2, 3 or 4 comprising the step of subjecting a starting material composition comprising one or more disilanes with formula HxSi2Cl6-x containing at least one Si—H bond and optionally further silanes, in particular the side-product mixture of the Siemens Process or fractions thereof, to a reaction with a reaction-promoting agent chosen from—ether/HCI solutions—amines, phosphines, or mixtures thereof—ammonium halides, phosphonium halides, or mixtures thereof at temperatures below 200° C.

The invention relates to a process for the production of monosilanes of formula H4-nSiCln with n being 2, 3 or 4 comprising the step of subjecting a starting material composition comprising one or more disilanes with formula HxSi2Cl6-x containing at least one Si—H bond and optionally further silanes, in particular the side-product mixture of the Siemens Process or fractions thereof, to a reaction with a reaction-promoting agent chosen from—ether/HCI solutions—amines, phosphines, or mixtures thereof—ammonium halides, phosphonium halides, or mixtures thereof at temperatures below 200° C.

A method for making chlorinated silazanes. The method comprises contacting: (a) a disilazane; (b) a chlorosilane; and (c) a catalyst which is a zinc salt of: (i) a sulfonic acid or (ii) a sulfonic acid imide.

A method for making chlorinated silazanes. The method comprises contacting: (a) a disilazane; (b) a chlorosilane; and (c) a catalyst which is a zinc salt of: (i) a sulfonic acid or (ii) a sulfonic acid imide.

Provided is a method for stably conducting a process for producing chlorosilanes by a chlorination reaction of metallic silicon. When producing chlorosilanes by the chlorination reaction of the metallic silicon, metallic silicon having a sodium content of 1 ppm or more and 90 ppm or less in terms of element and an aluminum content of 1000 ppm or more and 4000 ppm or less in terms of element is used as the metallic silicon. An average particle diameter of the metallic silicon is preferably about 150 μm to 400 μm.