A method of preparing a boron allotrope-organic lateral heterostructural article includes providing an article comprising a substrate comprising a portion thereof coupled to a boron allotrope comprising an elemental boron layer; generating an organic compound vapor from a solid organic compound source, said organic compound vapor having a higher enthalpy of adsorption on said substrate compared to enthalpy of adsorption on said boron allotrope; and contacting said organic compound vapor with said article to selectively deposit said organic compound on a substrate portion not coupled to said boron allotrope to provide a heterostructural article comprising said organic compound and said boron allotrope laterally adjacent one to the other and providing a lateral interface one with the other.

Provided are methods of producing cobalt-based nanoparticles (Co.sub.xB.sub.y NPs) of a pre-selected diameter. The methods include reducing Co.sup.2+ ions with a sodium borohydride (NaBH.sub.4) solution having a selected ratio of tetrahydroxyborate (B(OH).sub.4.sup.) to tetrahydroborate (BH.sub.4.sup.) based on the pre-selected diameter, where the ratio of B(OH).sub.4.sup. to BH.sub.4.sup. is positively correlated with the pre-selected diameter. Also provided are methods of using the Co.sub.xB.sub.y NPs to produce hollow metal nanospheres (HMNs). Methods of producing Co.sub.xB.sub.y NP core/metal shell structures are also provided, such methods including combining in an anaerobic galvanic exchange reaction a deaerated solution including Co.sub.xB.sub.y NP scaffolds and a deaerated solution including a metal. Also provided are methods of producing HMNs from the Co.sub.xB.sub.y NP core/metal shell structures. Compositions and kits that find use in practicing the methods of the present disclosure and using HMNs produced in accordance with the methods of the present disclosure, are also provided.

Provided are methods of producing cobalt-based nanoparticles (Co.sub.xB.sub.y NPs) of a pre-selected diameter. The methods include reducing Co.sup.2+ ions with a sodium borohydride (NaBH.sub.4) solution having a selected ratio of tetrahydroxyborate (B(OH).sub.4.sup.) to tetrahydroborate (BH.sub.4.sup.) based on the pre-selected diameter, where the ratio of B(OH).sub.4.sup. to BH.sub.4.sup. is positively correlated with the pre-selected diameter. Also provided are methods of using the Co.sub.xB.sub.y NPs to produce hollow metal nanospheres (HMNs). Methods of producing Co.sub.xB.sub.y NP core/metal shell structures are also provided, such methods including combining in an anaerobic galvanic exchange reaction a deaerated solution including Co.sub.xB.sub.y NP scaffolds and a deaerated solution including a metal. Also provided are methods of producing HMNs from the Co.sub.xB.sub.y NP core/metal shell structures. Compositions and kits that find use in practicing the methods of the present disclosure and using HMNs produced in accordance with the methods of the present disclosure, are also provided.

Provided are a near infrared absorbing fine particle dispersion liquid having an absorption ability in a near infrared region, a clear contrast, and applicable to offset printing, and a method for producing the same, an anti-counterfeit ink composition using the near infrared absorbing fine particle dispersion liquid and an anti-counterfeit printed matter using near infrared absorbing fine particles. Also provided are a near infrared absorbing fine particle dispersion liquid containing a solvent of one or more kinds selected from vegetable oils or vegetable oil-derived compounds; near infrared absorbing fine particles in an amount of 2 mass % or more and 25 mass % or less, selected from one or more kinds of hexaboride fine particles expressed by a general formula XB.sub.a (wherein element X is at least one or more kinds selected from a group consisting of La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Y, Sm, Eu, Er, Tm, Yb, Lu, Sr, and Ca, satisfying 4.0a6.2); and a dispersant soluble in the solvent and having a fatty acid in its structure, wherein viscosity is 180 mPa/S or less, and an anti-counterfeit ink composition containing the near infrared absorbing fine particle dispersion liquid. Also provided is an anti-counterfeit printed matter excellent in anti-counterfeit effect due to the printed matter containing the near infrared absorbing fine particles.

A process for manufacturing a compound in powder form, wherein said compound is the reaction product of (i) at least one metal and/or metalloid, and (ii) at least one further element that is more electronegative than the metal and/or metalloid, which process includes steps of: mixing at least one oxide of said at least one metal and/or metalloid with a reducing agent including Ca or Mg granules or powder, and/or calcium hydride or magnesium hydride in granule or powder form, to form a mixture; exposing the mixture to a source of said at least one further element; maintaining said mixture under a H.sub.2 atmosphere at a temperature of from 950 C. to 1500 C. for 1-10 hours; and, recovering said compound in powder form; wherein said at least one further element is selected from carbon, nitrogen, boron, silicon and mixtures thereof. A compound in powder form obtainable by such a process.

A process for manufacturing a compound in powder form, wherein said compound is the reaction product of (i) at least one metal and/or metalloid, and (ii) at least one further element that is more electronegative than the metal and/or metalloid, which process includes steps of: mixing at least one oxide of said at least one metal and/or metalloid with a reducing agent including Ca or Mg granules or powder, and/or calcium hydride or magnesium hydride in granule or powder form, to form a mixture; exposing the mixture to a source of said at least one further element; maintaining said mixture under a H.sub.2 atmosphere at a temperature of from 950 C. to 1500 C. for 1-10 hours; and, recovering said compound in powder form; wherein said at least one further element is selected from carbon, nitrogen, boron, silicon and mixtures thereof. A compound in powder form obtainable by such a process.

Provided are a near infrared absorbing fine particle dispersion liquid having an absorption ability in a near infrared region, a clear contrast, and applicable to offset printing, and a method for producing the same, an anti-counterfeit ink composition using the near infrared absorbing fine particle dispersion liquid and an anti-counterfeit printed matter using near infrared absorbing fine particles. Also provided are a near infrared absorbing fine particle dispersion liquid containing a solvent of one or more kinds selected from vegetable oils or vegetable oil-derived compounds; near infrared absorbing fine particles in an amount of 2 mass % or more and 25 mass % or less, selected from one or more kinds of hexaboride fine particles expressed by a general formula XB.sub.a (wherein element X is at least one or more kinds selected from a group consisting of La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Y, Sm, Eu, Er, Tm, Yb, Lu, Sr, and Ca, satisfying 4.0a6.2); and a dispersant soluble in the solvent and having a fatty acid in its structure, wherein viscosity is 180 mPa/S or less, and an anti-counterfeit ink composition containing the near infrared absorbing fine particle dispersion liquid. Also provided is an anti-counterfeit printed matter excellent in anti-counterfeit effect due to the printed matter containing the near infrared absorbing fine particles.

Embodiments of the present application provide a memristor electrode and a method for producing the same, an RRAM. The method includes: a. depositing a metal boride film on a substrate; b. performing annealing processing on the metal boride film; c. forming a photoresist layer on a surface of the metal boride film, and performing photolithography on the photoresist layer, to form a photolithographic pattern corresponding to a predetermined electrode pattern; and d. with the photolithographic pattern as a mask, etching the metal boride film by using an ion beam to form the metal boride film into the predetermined electrode pattern. According to the present disclosure, the memristor electrode produced using the metal boride is completely compatible with a CMOS producing process, and product performance of an RRAM including the memristor could be improved.

Provided is an MgB.sub.2 superconductive thin film wire material allowing for lower costs while maintaining superconductive properties that are equal to or greater than those of the MgB.sub.2 superconductive thin film wire material of prior art, and to provide a production method for the superconductive thin film wire material. The MgB.sub.2 superconductive thin film wire material according to the present invention is a superconductive wire material comprising an MgB.sub.2 thin film formed over an elongated metal base material, characterized in that the MgB.sub.2 thin film exhibits a critical temperature of 30 K or higher, and has a microscopic organization wherein MgB.sub.2 columnar crystal grains stand densely packed on the surface of the elongated metal base material, and a layer of Mg oxide is formed in such a manner as to surround the MgB.sub.2 columnar crystal grains in the grain boundary regions of the MgB.sub.2 columnar crystal grains.

Provided is an MgB.sub.2 superconductive thin film wire material allowing for lower costs while maintaining superconductive properties that are equal to or greater than those of the MgB.sub.2 superconductive thin film wire material of prior art, and to provide a production method for the superconductive thin film wire material. The MgB.sub.2 superconductive thin film wire material according to the present invention is a superconductive wire material comprising an MgB.sub.2 thin film formed over an elongated metal base material, characterized in that the MgB.sub.2 thin film exhibits a critical temperature of 30 K or higher, and has a microscopic organization wherein MgB.sub.2 columnar crystal grains stand densely packed on the surface of the elongated metal base material, and a layer of Mg oxide is formed in such a manner as to surround the MgB.sub.2 columnar crystal grains in the grain boundary regions of the MgB.sub.2 columnar crystal grains.