A compound ammonium fluoroborate, a nonlinear optical crystal of ammonium fluoroborate, and a preparation method and use thereof; the compound has the chemical formula of NH.sub.4B.sub.4O.sub.6F with a molecular weight of 176.28, and is prepared by a solid phase reaction process; the crystal has the chemical formula of NH.sub.4B.sub.4O.sub.6F with a molecular weight of 176.28, belongs to the orthorhombic system, and has a space group of Pna2.sub.1 and the following unit cell parameters: a=7.615(3) , b=11.207(4) , c=6.604(3) , Z=4, V=563.6 .sup.3. The nonlinear optical crystal can be obtained by the method of the present invention. The present invention provides uses of the nonlinear optical crystal in producing harmonic light and a deep-ultraviolet frequency-multiplied light below 200 nm; and in making a frequency multiplication generator, a frequency up or down converter or an optical parametric oscillator.

A compound ammonium fluoroborate, a nonlinear optical crystal of ammonium fluoroborate, and a preparation method and use thereof; the compound has the chemical formula of NH.sub.4B.sub.4O.sub.6F with a molecular weight of 176.28, and is prepared by a solid phase reaction process; the crystal has the chemical formula of NH.sub.4B.sub.4O.sub.6F with a molecular weight of 176.28, belongs to the orthorhombic system, and has a space group of Pna2.sub.1 and the following unit cell parameters: a=7.615(3) , b=11.207(4) , c=6.604(3) , Z=4, V=563.6 .sup.3. The nonlinear optical crystal can be obtained by the method of the present invention. The present invention provides uses of the nonlinear optical crystal in producing harmonic light and a deep-ultraviolet frequency-multiplied light below 200 nm; and in making a frequency multiplication generator, a frequency up or down converter or an optical parametric oscillator.

A method of producing boron trichloride, which includes: a metal chlorination step of bringing a gas containing chlorine gas into contact with raw boron carbide as boron carbide including, as an impurity, a metal other than boron, and allowing the metal to react with the chlorine gas in the gas containing the chlorine gas, to form a metal chloride and to obtain boron carbide containing the metal chloride; a removal step of removing the metal chloride from the boron carbide containing the metal chloride, obtained in the metal chlorination step; and a generation step of bringing a gas containing chlorine gas into contact with the boron carbide from which the metal chloride has been removed in the removal step, and allowing the boron carbide and the chlorine gas in the gas containing the chlorine gas to react with each other to generate boron trichloride.

Provided is a method for producing boron trichloride capable of efficiently producing boron trichloride by suppressing the generation of byproducts resulting from water by sufficiently removing water from a reaction system. The method for producing boron trichloride includes: a dehydration step of bringing a chlorine-containing gas which contains chlorine gas and has a water content of 1 ppm by volume or less into contact with boron carbide at a temperature lower than a generation starting temperature at which the generation of the boron trichloride starts by the reaction between the boron carbide and the chlorine gas, and allowing water in the boron carbide to react with the chlorine gas in the chlorine-containing gas to remove the water contained in the boron carbide; and a generation step of allowing the boron carbide dehydrated in the dehydration step to react with the chlorine gas to generate boron trichloride.

A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

The present invention is directed to a process for producing a molded polymeric article including: providing a polymerizable composition of a reaction mixture of at least the following components: a mold release agent of ionic fluoride and/or ionic fluoride precursor, and a polymeric organic material selected from thermosetting organic polymeric materials and thermoplastic organic materials; allowing the reaction mixture to undergo exothermic reaction; providing a mold having a first part and a second part spaced one from the other thereby forming a cavity there between; introducing the reaction mixture into the mold cavity wherein the reaction mixture is at a temperature of up to 130 C.; holding the mold at a temperature and for a time sufficient to cure the reaction mixture thereby forming a molded polymeric article within the mold; and removing the molded polymeric article from the mold.

Molded articles also are provided.

The present disclosure relates to the technical field of separation of boron isotopes, in particular to a device and method for cracking a boron trifluoride complex. The device for cracking the boron trifluoride complex includes a continuous feeding system, a rising film preheater, a falling film preheater, a boron trifluoride gas circulation pipeline, a separation chamber, a cracking tower, a gas-liquid separator, an impurity removal tower, and anisole storage tank. By employing a continuous feeding method, the device for cracking boron trifluoride complex shortens retention time of anisole at a high-temperature stage while ensuring a cracking rate of a boron trifluoride-anisole complex, reduces the thermal decomposition degree of anisole, maintains the purity of anisole, and greatly improves the utilization rate and production safety of anisole, thus ensuring continuous and stable production.

There is provided a method of producing boron trichloride, in which damage to a reaction container is inhibited. The method of producing boron trichloride includes performing reaction between chlorine gas in a gas containing the chlorine gas and particulate boron carbide (4) in a state in which the boron carbide (4) flows in the gas containing the chlorine gas.

A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B.sub.2F.sub.4.

The present invention relates, in general, to the purification of boron trichloride (BCl.sub.3). More particularly, the invention relates to a process for minimizing silicon tetrachloride (SiCl.sub.4) formation in BCl.sub.3 production and/or the removal of SiCl.sub.4 in BCl.sub.3 product stream by preventing/minimizing the silicon source in the reaction chambers. In addition, a hydride material may be used to convert any SiCl.sub.4 present to SiH.sub.4 which is easier to remove. Lastly freeze separation would replace fractional distillation to remove SiCl.sub.4 from BCl.sub.3 that has been partially purified to remove light boilers.