The present invention relates to a polymer electrolyte and a method for manufacturing same. More specifically, a polymer electrolyte with improved ion conductivity can be produced by adding boron nitride to a solid electrolyte comprising polysiloxane.

A method and apparatus for preparing boron nitride nanotubes (BNNTs) according to an embodiment may ensure mass-production, may increase yield by reducing a production time, and may prepare BNNTs with high purity.

A method and apparatus for preparing boron nitride nanotubes (BNNTs) according to an embodiment may ensure mass-production, may increase yield by reducing a production time, and may prepare BNNTs with high purity.

There is provided a composite of a metallic matrix and boron nitride nanotubes, the metallic matrix including aluminum or an aluminum alloy. Also, there is provided a method for manufacturing the composite. The method includes: a powder mixing step of mixing a powder of boron nitride nanotubes and a powder of an element soluble in a molten metal of the metallic matrix to prepare a powder mixture of boron nitride nanotubes and a metallic matrix-soluble element; an alloy melt mixing step of mixing the powder mixture and the molten metal of the metallic matrix to prepare a metallic matrix melt mixed with boron nitride nanotubes; and a casting step of solidifying the metallic matrix melt mixed with boron nitride nanotubes to obtain the composite.

A reaction method comprising combining a carbonyl-substituted arylboronic acid or ester and an -effect amine in aqueous solution at a temperature between about 5 C to 55 C, and a pH between 2 and 8 to produce an adduct. A process is also provided comprising: contacting a boron compound having a boron atom bonded to a sp.sup.2 hybridized carbon conjugated with a cis-carbonyl, the boron having at least one labile substituent, with an -effect amine, in a solvent for a time sufficient to form an adduct, which may proceed to further products.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m.sup.2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 m and at most 1 m, and which are spherical, and a resin (A) having a melt viscosity at 120 C. of at most 100 Pa.Math.s.

Provided is a hexagonal boron nitride powder capable of obtaining a resin composition excellent in solder heat resistance.

The solder heat resistance of the resin composition can be improved by using a hexagonal boron nitride powder having a ratio (S.sub.W/S.sub.N) of a BET specific surface area (S.sub.W) measured using water as an adsorbed species to a BET specific surface area (S.sub.N) measured using nitrogen as an adsorbed species of 0.07 or less. In addition, by a method for producing a hexagonal boron nitride powder, including a step of heat-treating a coarse hexagonal boron nitride powder having an amount of eluted boron of 60 ppm or less at 1300? C. or higher and 2200? C. or lower in a nitrogen atmosphere having a dew point temperature of ?85? C. or lower, a hexagonal boron nitride powder capable of improving the solder heat resistance of the resin composition can be obtained.

A process for producing a material in the form of nanosheets by ball milling of crystals of the material, wherein the ball milling takes place in the presence of a reactive gas.