A method of preparing cerium boride powder, according to the present invention, includes a first step for generating mixed powder by mixing at least one selected from among cerium chloride (CeCl.sub.3) powder and cerium oxide (CeO.sub.2) powder, at least one selected from among magnesium hydride (MgH.sub.2) powder and magnesium (Mg) powder, and boron oxide (B.sub.2O.sub.3) powder, a second step for generating composite powder including cerium boride (Ce.sub.xB.sub.y) and at least one selected from among magnesium oxide (MgO) and magnesium chloride (MgCl.sub.2), by causing reaction in the mixed powder at room temperature based on a ball milling process, and a third step for selectively depositing cerium boride powder by dispersing the composite powder in a solution.

A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.

A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.

A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200 C. on a substrate, and then an anneal between 200 C. and 900 C., and preferably from 200 C. and 400 C., is performed so that a Mg vapor pressure >10.sup.6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between 223 C. and 900 C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance x area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

The invention is a method for coproducing Hydrogen and certain metals by reducing a metal oxide(s) with MgH.sub.2 or with metal and water, wherein the non-water oxides used in the method include SiO.sub.2, Cr.sub.2O.sub.3, TiO.sub.2, SnO.sub.2, ZrO.sub.2, CuO, ZnO, WO.sub.3, Ta.sub.2O.sub.5, Cs.sub.2Cr.sub.2O.sub.7 or CsOH. The method reacts the MgH.sub.2 with a metal oxide or directly uses metal and water instead of a hydride, and initiates a reaction with the metal oxide. The reaction releases Hydrogen and reduces the subject oxide to metal.

The present invention provides a genus of polycyclic amines that are useful as opioid receptor modulators. The compounds of the invention are useful in both therapeutic and diagnostic methods, including for treating pain, neurological disorders, cardiac disorders, bowel disorders, drug and alcohol addiction, drug overdose, urinary disorders, respiratory disorders, sexual dysfunction, psoriasis, graft rejection or cancer.

The present invention provides a genus of polycyclic amines that are useful as opioid receptor modulators. The compounds of the invention are useful in both therapeutic and diagnostic methods, including for treating pain, neurological disorders, cardiac disorders, bowel disorders, drug and alcohol addiction, drug overdose, urinary disorders, respiratory disorders, sexual dysfunction, psoriasis, graft rejection or cancer.

A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200 C. on a substrate, and then an anneal between 200 C. and 900 C., and preferably from 200 C. and 400 C., is performed so that a Mg vapor pressure >10.sup.0.6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between 223 C. and 900 C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance x area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200 C. on a substrate, and then an anneal between 200 C. and 900 C., and preferably from 200 C. and 400 C., is performed so that a Mg vapor pressure >10.sup.6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between 223 C. and 900 C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance x area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

A method of preparing cerium boride powder, according to the present invention, includes a first step for generating mixed powder by mixing at least one selected from among cerium chloride (CeCl.sub.3) powder and cerium oxide (CeO.sub.2) powder, at least one selected from among magnesium hydride (MgH.sub.2) powder and magnesium (Mg) powder, and boron oxide (B.sub.2O.sub.3) powder, a second step for generating composite powder including cerium boride (Ce.sub.xB.sub.y) and at least one selected from among magnesium oxide (MgO) and magnesium chloride (MgCl.sub.2), by causing reaction in the mixed powder at room temperature based on a ball milling process, and a third step for selectively depositing cerium boride powder by dispersing the composite powder in a solution.