A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO.sub.3, wherein at least one of A and B in ABO.sub.3 is substituted and doped with another atom having a larger atom radius, and ABO.sub.3 becomes A.sub.1-xA′.sub.xB.sub.1-yB′.sub.yO.sub.3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

The invention is directed towards dielectric materials, BaTiO.sub.3, BaZrO.sub.3, and/or BaTi.sub.1-.sub.xZr.sub.xO.sub.3, such that 0≤x≤1, for detecting, sensing, filtering, reacting, or absorbing toxic chemicals, such as chemical warfare agents (“CWAs”) and their structural analogs, toxic industrial chemicals and narcotics, wherein the dielectric material is incorporated into a sensor for detecting, sensing, filtering, reacting, or absorbing the toxic chemicals.

Described herein are new solid oxide fuel cell interconnects and methods for making same that may comprise a novel bilayer construct on an anode substrate to provide a dense microstructure, low area specific resistance, and negligible oxygen permeability to form a bilayer ceramic interconnect that is a strong candidate for next-generation, durable, and low-cost tubular solid oxide fuel cells.

A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of first secondary phases, the first secondary phase is a secondary phase including Ni, Mg, Al, Si, and O, and at least one of the plurality of first secondary phases has a ratio of a major axis length to a minor axis length of 4 or more.

A high-purity barium titanate powder according to the present invention has a Cl.sup.− concentration of 20 ppm or less, an electric conductivity of extracted water of 70 μS/cm or less, and an average particle diameter of 1 μm to 30 μm.

A dielectric material which satisfies X9M characteristics and ensures operations over an extended period of time at 200° C. is provided.

A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO.sub.3, wherein at least one of A and B in ABO.sub.3 is substituted and doped with another atom having a larger atom radius, and ABO.sub.3 becomes A.sub.1-xA′.sub.xB.sub.1-yB′.sub.yO.sub.3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

The purpose of the present invention is to provide a method for producing particles and an apparatus for producing particles, wherein fine particles can be more conveniently obtained compared to conventional top-down methods for generating fine particles, and spherical fine particles can be obtained like bottom-up methods for generating fine particles. An aspect of the present invention pertains to a method for producing particles, the method comprising: a step for mixing a substance containing a metal and/or a semi-metal with an explosive; a step for burning the explosive to cause a combustion reaction of the substance; and a step for capturing particles in a combustion gas obtained in the combustion reaction step.

A dielectric substance includes a core-shell grain having a twin crystal structure. An interface of the twin crystal structure of the core-shell grain extends from a shell on one side, passes through a core, and extends to the shell on the other side.

A multilayer ceramic capacitor includes: a multilayer structure in which ceramic dielectric layers and internal electrode layers are alternately stacked, wherein: a main component of the ceramic dielectric layer is barium titanate in which a donor element having a larger valence than Ti is solid-solved and an acceptor element having a smaller valence than Ti and larger ion radius than Ti and the donor element is solid-solved; a solid-solution amount of the donor element is 0.05 mol or more and 0.3 mol or less on a presumption that an amount of the barium titanate is 100 mol and the donor element is converted into an oxide; and a solid solution amount of the accepter element is 0.02 mol or more and 0.2 mol or less on a presumption that the amount of the barium titanate is 100 mol and the acceptor element is converted into an oxide.