Perovskite structures are disclosed comprising: a first element X which may be barium and/or a lanthanide, strontium, iron, cobalt, oxygen, magnesium and tungsten; the structure comprising a region of single perovskite and a region of double perovskite. Also disclosed are methods for forming such structures, electrodes comprising such structures and solid oxide cells using such structures.

Embodiments of the present disclosure generally describe scintillation materials, including colloidal scintillation materials and solid scintillation materials, methods of preparing the scintillation materials, applications of the scintillation materials, methods of using the scintillation materials, and the like.

Piezoelectric assembly, which comprises a substrate of Ni, Cu, or steel, a first oriented layer assembled on the substrate and a piezoelectric layer on the oriented layer. The piezoelectric layer has a degree of (100) orientation with respect to the local surface normal of 90% or more.

A metal-oxide perovskite material having a general formula Ca.sub.1-xCe.sub.xTi.sub.yMn.sub.1-yO.sub.3, where x is in a range of about 0.3 to about 0.35 and y is in a range of about 0.25 to about 0.35. Producing hydrogen and oxygen includes heating the metal-oxide perovskite material; reducing the metal-oxide perovskite material to yield a reduced metal-oxide perovskite material; cooling the reduced metal-oxide perovskite material; and contacting the reduced metal-oxide perovskite material with a re-oxidizing fluid including steam to yield hydrogen and a re-oxidized metal-oxide perovskite material. Producing carbon monoxide and oxygen includes heating the metal-oxide perovskite material; reducing the metal-oxide perovskite material to yield a reduced metal-oxide perovskite material; cooling the reduced metal-oxide perovskite material, and contacting the reduced metal-oxide perovskite material with a re-oxidizing fluid including carbon dioxide to yield carbon monoxide and a re-oxidized metal-oxide perovskite material.

A perovskite oxygen carrier having the formula Sr.sub.1-xCa.sub.xFe.sub.1-yNi.sub.yO.sub.3, where 0.05<x<0.30 and 0.001<y<0.125 and a method of using the perovskite carrier to carry oxygen. A mesoporous perovskite oxygen carrier having the formula Sr.sub.1-xCa.sub.xFeO.sub.3, where 0.01<x<0.40 and methods for making and using the mesoporous perovskite oxygen carrier.

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.

Disclosed herein are perovskite materials and methods of making an use thereof.

A system suitable for oxidizing ammonia with oxygen in the presence of catalysts is described. The system includes a reactor equipped with at least one supply line for a reactant gas mixture and at least one discharge line for a process gas; a catalyst comprising at least one transition metal oxide that is not an oxide of a platinum metal; and a device for adjusting a molar ratio of oxygen to ammonia of less than or equal to 1.75 mol/mol in the reactant gas mixture by mixing an oxygen-containing gas stream having an O.sub.2 content of <20% by volume with a chosen amount of ammonia. The oxygen-containing gas stream is produced by a device for: diluting an air stream with a gas stream comprising less than 20% by volume oxygen; or depleting oxygen from an oxygen-containing gas mixture, preferably from air; or by a combination thereof.

A catalyst comprising a barium niobate-based cubic perovskite structure where, Mg and Ca has been used to dope the niobium sites along with Fe, Ni, Co, Y, and Pr.