Patent classifications
C01P2002/34
INORGANIC HALIDE PEROVSKITE NANOWIRES AND METHODS OF FABRICATION THEREOF
This disclosure provides systems, methods, and apparatus related to inorganic halide perovskite nanowires. In one aspect, a first solution comprising cesium oleate or rubidium oleate in a first organic solvent is provided. A second solution comprising a lead halide and a surfactant in a second organic solvent is provided. The halide is selected from a group consisting of chlorine, bromine, and iodine. The first solution and the second solution are mixed. A reaction between the cesium oleate or the rubidium oleate and the lead halide forms a plurality of nanowires comprising an inorganic lead halide perovskite.
Environment-friendly heat shielding film using non-radioactive stable isotope and manufacturing method thereof
Disclosed are an environment-friendly heat shielding film using a non-radioactive stable isotope and a manufacturing method therefor and, more specifically, an environment-friendly heat shielding film using a non-radioactive stable isotope and a manufacturing method therefor, wherein a heat shielding layer is formed on one surface of a substrate layer; the heat shielding layer is composed of stable isotopes as elements constituting a precursor and contains a non-radioactive stable isotope tungsten bronze compound having an oxygen-deficient .sup.(Y)A.sub.x.sup.(182,183,184,186)W.sub.1O.sub.(3-n) type hexagonal structure, thereby preventing the generation of radioactive materials, fundamentally blocking haze, and improving the visible light transmittance and the infrared light blocking rate; and the heat resistance and durability problems that may occur when the heat shielding layer is formed of the non-radioactive stable isotope tungsten bronze compound are solved by a passivation film.
Piezoelectric composition and piezoelectric element
A piezoelectric composition including copper and a complex oxide having a perovskite structure represented by a general formula ABO.sub.3, in which an A site element in the ABO.sub.3 is potassium or potassium and sodium, a B site element in the ABO.sub.3 is niobium or niobium and tantalum, the copper is included in n mol % in terms of a copper element with respect to 1 mol of the complex oxide, and n satisfies 0.100≤n≤1.000.
FINE FLUORESCENT PARTICLES, PROCESS FOR PRODUCING FINE FLUORESCENT PARTICLES, THIN FLUORESCENT FILM, WAVELENGTH CONVERSION FILM, WAVELENGTH CONVERSION DEVICE, AND SOLAR CELL
A luminescent substance particle including BaSnO.sub.3 having a perovskite-type structure, wherein the luminescent substance particle contains one of 0.07% by mass or less of Fe (iron), 0.005% by mass or less of Cr (chromium) and 0.02% by mass or less of Ni (nickel). A wavelength conversion film including the luminescent substance particle for converting a light in an ultraviolet region to a light in an infrared region. A wavelength conversion device including a substrate and the wavelength conversion film formed on the substrate.
PIEZOELECTRIC FILM, PIEZOELECTRIC ELEMENT INCLUDING THE SAME, AND LIQUID DISCHARGE APPARATUS
Provided is a piezoelectric film formed by a vapor phase growth method, the piezoelectric film containing:
a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less:
A.sub.1+δ[(Zr.sub.xTi.sub.1−a).sub.1−aNb.sub.a]O.sub.y Formula P
wherein, in formula P, A is an A-site element primarily containing Pb; Zr, Ti, and Nb are B-site elements; x is more than 0 but less than 1; a is 0.1 or more but less than 0.3.
QUANTUM DOT LUMINESCENT MATERIAL AN METHOD OF PRODUCING THEREOF
A quantum dot luminescent material and a method of producing thereof. The quantum dot luminescent material includes a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and an electron injection layer. The quantum dot luminescent layer is located on the hole transport layer, and the quantum dot luminescent layer includes uniformly distributed perovskite nanodots.
SYSTEMS AND METHODS FOR DRYING COMPOUNDS
This application relates to methods and systems for drying polyol starters, as well as reaction mixtures including such polyol starters, and the preparation of polymers derived from such polyol starters. In some embodiments, the present invention encompasses methods of drying a polyol initiator compound, the method including the step of contacting a composition comprising a polyol initiator compound with one or more molecular sieves.
Organometallic precursor compound for vapor deposition for forming oxide thin film and method for manufacturing same
An organometallic compound, which enables thin-film deposition through vapor deposition, and particularly to a Co or Fe precursor, which is suitable for use in atomic layer deposition or chemical vapor deposition, and a method of preparing the same.
Preparation method of formamidinium lead halide perovskite quantum dots
There is provided a method of preparing formamidinium lead halide perovskite quantum dots having a photoluminescence quantum yield higher than before. The disclosed method comprises steps of: preparing a lead halide solution by dissolving lead halide (II), oleic acid and oleylamine in a nonpolar solvent; preparing a formamidinium solution by dissolving formamidine acetate salt and oleic acid in a nonpolar solvent; mixing the formamidinium solution and the lead halide solution to form quantum dots; and centrifuging the mixed solution to obtain sediment; dispersing the sediment in a nonpolar solvent to prepare a crude quantum dot solution; mixing the crude quantum dot solution with methyl acetate; and centrifuging the crude quantum dot solution mixed with the methyl acetate to obtain sediment as purified quantum dots. The durable quantum dots are stably formed by injecting the lead halide solution into the formamidinium solution heated at 60° C.-90° C.
Piezoelectric Element, Piezoelectric Element Application Device
A piezoelectric element 1 includes a first electrode 20, a second electrode 40, and a piezoelectric layer 30 provided between the first electrode 20 and the second electrode 40. The piezoelectric layer 30 is composed of a composite oxide having a perovskite-type structure and containing potassium (K), sodium (Na), and niobium (Nb), and has a first peak derived from a (100) plane, a second peak derived from a (010) plane, and a third peak derived from a (001) plane in an X-ray diffraction pattern obtained by θ-2θ measurement.