Cathode active material in particulate form with a mean particle diameter in the range from 2 to 16 .Math.m (D50), wherein the cathode active material has the composition Li.sub.1+xTM.sub.1-xO.sub.2 wherein x is in the range of from 0.1 to 0.2 and TM is a combination of elements according to general formula (I), (Ni.sub.aCo.sub.bMn.sub.c).sub.1-d-eM.sup.1.sub.dM.sup.2.sub.e where the variables are each defined as follows: a is in the range from 0.20 to 0.40, b is in the range of from zero to 0.15, c is in the range of from 0.50 to 0.75, d is in the range of from zero to 0.015, and e is in the range of from zero to 0.02, M.sup.1 is selected from Al, Ti, Zr, Mo, W, Fe, Nb, and Mg, M.sup.2 is selected from B and K, with a + b + c = 1.0 wherein said composite oxide has a specific surface (BET) in the range from 0.5 m.sup.2/gto 10 m.sup.2/gand a pressed density of at least 2.9 g/cm.sup.3, and wherein said cathode active material has an average primary particle diameter in the range of from 200 to 3,000 nm.

The present invention discloses a quaternary cathode material, an cathode and a battery. Particularly, the present invention provides the quaternary cathode material with a chemical structural formula: Li.sub.xNi.sub.a′Co.sub.bMn.sub.c′Al.sub.dM.sub.yO.sub.2, wherein 1x1.05,0<y0.025.0.3a′0.95,0.03b01.0.01c′0.05,0.01d0.005 and a′+b+c′+d=1; M is a dopant selecting from at least one of Zr, Al, B, Ti, Mg, Nb, Ba, Si, P, W, Sr and F. The quaternary cathode material has an α-NaFeO.sub.2 ty

A crystalline titanium and magnesium compound having an X-ray diffraction pattern having interplanar spacing (d-spacing) values at about 5.94, 3.10, 2.97, 2.10, 1.98, 1.82, and 1.74±0.1 angstroms may be used in protective coatings for metal or metal alloy substrates. The coatings exhibit excellent corrosion resistances and provide corrosion protection equal to or better than typical non-chromate coatings.

A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

The present invention relates to a cathode active material, and a lithium secondary battery comprising the same, the present invention provides a cathode active material, represented by the following Chemical Formula 1, wherein I003/I104 ratio is 1.6 or more, and R-factor value represented by the following Formula 1 is 0.40 to 0.44, and c-axis lattice constant (c) and a-axis lattice constant (a) satisfy 3(a)+5.555≤(c)≤3(a)+5.580:
R-factor=(I102+I006)/(I101)  Formula 1 wherein I003, I006, I101, I102, and I104 are the intensity of diffraction peaks on the (003), (006), (101), (102), and (104) planes by X-ray diffraction analysis using CuKα-rays,
Li.sub.α[(Ni.sub.xCo.sub.y).sub.1-βA.sub.β]O.sub.z  Chemical Formula 1 in the Chemical Formula 1, 0.95≤α≤1.1, 0.75≤x≤0.95, 0.03≤y≤0.25, 0<β≤0.2, and 1.9≤z≤2.1, and A is a dopant metal element, and the average oxidation number N of A is 3.05≤N≤3.35.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

A negative active material includes a carbon material. The carbon material satisfies the following relationship: 6<Gr/K<16, Gr is a graphitization degree of the carbon material, measured by X-ray diffraction; and K is a ratio Id/Ig of a peak intensity Id of the carbon material at a wavenumber of 1250 cm.sup.−1 to 1650 cm.sup.−1 to a peak intensity Ig of the carbon material at a wavenumber of 1500 cm.sup.−1 to 1650 cm.sup.−1, and is measured by using Raman spectroscopy, and K is 0.06 to 0.15.

A plate-like alumina particle, in which a ratio I (006)/I (113) of a peak intensity 1(006) at 20=41.6±0.3 degrees which corresponds to a (006) face to a peak intensity I(113) at 20=43.3±0.3 degrees which corresponds to a (113) face of diffraction peaks obtained by X-ray diffraction measurement using a Cu—Kα ray, is 0.2 or more. A method for manufacturing the plate-like alumina particle including mixing an aluminum compound including an aluminum element, a molybdenum compound including a molybdenum element, and a shape-controlling agent to produce a mixture and firing the mixture.

An antimicrobial material including a substrate and an antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide in and/or on the substrate is described, as well as antimicrobial coating materials and coatings formed therefrom. The antimicrobial material may be constituted in an antimicrobial surface of a surface-presenting substrate, to combat transmission and spread of microbial disease, e.g., disease mediated by microbial pathogens such as bacteria, viruses, and fungi. Antimicrobial mixed metal oxide, mixed metal sulfide, or mixed metal oxysulfide as described may be contacted with microorganisms to effect inactivation thereof.