Disclosed herein are sealed devices comprising a first substrate, a second substrate, an inorganic film between the first and second substrates, and at least one weld region comprising a bond between the first and second substrates. The weld region can comprise a chemical composition different from that of the inorganic film and the first or second substrates. The sealed devices may further comprise a stress region encompassing at least the weld region, in which a portion of the device is under a greater stress than the remaining portion of the device. Also disclosed herein are display and electronic components comprising such sealed devices.

Methods of making a transparent glass-based article including at least two transparent glass-based substrates and a laser-induced bond therebetween. Methods include arranging the two transparent glass-based substrates relative to each other to form a contact area. Methods also include providing a laser beam contiguous the contact area to bond the two transparent glass-based substrates.

Methods of making a transparent glass-based article including at least two transparent glass-based substrates and a laser-induced bond therebetween. Methods include arranging the two transparent glass-based substrates relative to each other to form a contact area. Methods also include providing a laser beam contiguous the contact area to bond the two transparent glass-based substrates.

A manufacturing method of a glass panel for a glass panel unit includes a melting step, a spreading step, an annealing step, a cutting step, and a spacer disposition step. The spacer disposition step is a step of disposing spacers onto a glass sheet and is performed by a spacer disposition device prior to the cutting step.

A manufacturing method of a glass panel for a glass panel unit includes a melting step, a spreading step, an annealing step, a cutting step, and a spacer disposition step. The spacer disposition step is a step of disposing spacers onto a glass sheet and is performed by a spacer disposition device prior to the cutting step.

High energy density multi-layer capacitors comprise inner electrodes buried within thin layers of alkali-free glass. The multi-layer glass capacitor can be fabricated by heating a plurality of capacitor layers above the annealing temperature of the glass to thermal bond the layers together. The edge margin of the buried electrodes can be selected to provide an adequate protection level from high-voltage flashover of the multi-layer glass capacitor. For example, an edge margin of 0.125″ can hold off about 10 kV in air.

High energy density multi-layer capacitors comprise inner electrodes buried within thin layers of alkali-free glass. The multi-layer glass capacitor can be fabricated by heating a plurality of capacitor layers above the annealing temperature of the glass to thermal bond the layers together. The edge margin of the buried electrodes can be selected to provide an adequate protection level from high-voltage flashover of the multi-layer glass capacitor. For example, an edge margin of 0.125″ can hold off about 10 kV in air.

Radiation shielding glass articles with thin glass faceplates that improve transmission are disclosed. A radiation shielding glass article includes a radiation shielding glass having a first surface and an opposing second surface; and a first thin glass faceplate having a first surface and an opposing second surface, wherein one of said first surface or second surface of said first thin glass faceplate faces the first surface of the radiation shielding glass, wherein the first thin glass faceplate having a thickness of less than or equal to 1.0 mm is bonded to the first surface of the radiation shielding glass, and wherein the first thin glass faceplate is one of an alkaline boro-aluminosilicate glass, or a chemically strengthenable sodium aluminum silicate glass.

Radiation shielding glass articles with thin glass faceplates that improve transmission are disclosed. A radiation shielding glass article includes a radiation shielding glass having a first surface and an opposing second surface; and a first thin glass faceplate having a first surface and an opposing second surface, wherein one of said first surface or second surface of said first thin glass faceplate faces the first surface of the radiation shielding glass, wherein the first thin glass faceplate having a thickness of less than or equal to 1.0 mm is bonded to the first surface of the radiation shielding glass, and wherein the first thin glass faceplate is one of an alkaline boro-aluminosilicate glass, or a chemically strengthenable sodium aluminum silicate glass.

A wafer- or panel-level encapsulated package comprises a glass substrate comprising a glass cladding layer (105) fused to a glass core layer (110), the glass substrate comprising a cavity (425), wherein the glass cladding layer has a higher etch rate in an etchant than the glass core layer. The wafer- or panel-level encapsulated package further comprises a microelectronic component (700) disposed in the cavity, and an encapsulant (702) sealed to the glass substrate such that the microelectronic component is encapsulated within the cavity. Methods for forming the wafer- or panel-level encapsulated package, including etching a cavity into a glass substrate, depositing a microelectronic component into the cavity, and sealing an encapsulant to the glass substrate such that the microelectronic component is encapsulated within the cavity are also provided.