A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

The invention relates to an additive manufacturing method comprising the steps: additive application of a layer of material (1), and modifying a part of the applied material layer (1) in a property so that a partial layer (3) in the material layer (1) is structured, the partial layer (3) differing from the remaining material layer at least in the modified property. The invention also relates to a correspondingly manufactured component and a suitable manufacturing apparatus.

A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

A spark plug connecting element. The spark plug connecting element includes a first contact element and a second contact element. A resistor element is situated between the first contact element and the second contact element. The first contact element and the second contact element have a specific conductivity of 10.sup.2 S/m to 10.sup.8 S/m and the resistor element has a specific conductivity of 10.sup.−3 S/m to 10.sup.1 S/m.

A ceramic includes: a ceramic base; and a modification layer arranged on a surface of the ceramic base. The modification layer includes a bismuth-based oxide and other components. In an embodiment, the ceramic base includes a porous ceramic. In an embodiment, the bismuth-based oxide includes bismuth trioxide. In an embodiment, a mass percentage of bismuth in the modification layer is 50% to 80%.

A ceramic includes: a ceramic base; and a modification layer arranged on a surface of the ceramic base. The modification layer includes a bismuth-based oxide and other components. In an embodiment, the ceramic base includes a porous ceramic. In an embodiment, the bismuth-based oxide includes bismuth trioxide. In an embodiment, a mass percentage of bismuth in the modification layer is 50% to 80%.

An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness. The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ΔL* satisfies ΔL*<3.0, in which the ΔL* is obtained by subtracting lightness Lc*at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface, and wherein the oxide sintered body has a relative density of 97.0% or more.

An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness. The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ΔL* satisfies ΔL*<3.0, in which the ΔL* is obtained by subtracting lightness Lc*at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface, and wherein the oxide sintered body has a relative density of 97.0% or more.