C04B35/453

3D-Printed Implants And Methods For 3D Printing Of Implants

A method of making an implantable device includes directing a projection of laser energy having a plurality of adjacent energy pixels on a build surface atop a bed of powder, thereby forming a layer of the implantable device. The directing step is repeated a plurality of times, in a layer-by-layer manner, such that a totality of the formed layers define at least a portion of the implantable device.

PLANT STRUCTURE, AND BUILDING MEMBER AND INTERIOR MEMBER USING SAME
20220340493 · 2022-10-27 ·

A plant structure includes a ceramic member including at least one of an oxide or an oxide hydroxide as a main component and substantially including no hydrate, and a plant-derived substance directly fixed to the ceramic member without interposing an adhesive substance different from a ceramic material making up the ceramic member. A building member and an interior member each include the plant structure.

PLANT STRUCTURE, AND BUILDING MEMBER AND INTERIOR MEMBER USING SAME
20220340493 · 2022-10-27 ·

A plant structure includes a ceramic member including at least one of an oxide or an oxide hydroxide as a main component and substantially including no hydrate, and a plant-derived substance directly fixed to the ceramic member without interposing an adhesive substance different from a ceramic material making up the ceramic member. A building member and an interior member each include the plant structure.

Surface-enhanced Raman scattering (SERS) substrate

A surface-enhanced Raman scattering (SERS) substrate and its method of formation is disclosed. The surface-enhanced Raman scattering (SERS) substrate comprises a solid support, a first noble metal nanoparticles is disposed on the solid support, a porous oxide layer comprising transition metal oxide nanoparticles is disposed on the first noble metal nanoparticles and a second noble metal nanoparticles is disposed on the porous oxide layer. The porous oxide layer prevents contact between the first noble metal nanoparticles and the second noble metal nanoparticles and has a mean pore size of 2 to 30 nm.

Surface-enhanced Raman scattering (SERS) substrate

A surface-enhanced Raman scattering (SERS) substrate and its method of formation is disclosed. The surface-enhanced Raman scattering (SERS) substrate comprises a solid support, a first noble metal nanoparticles is disposed on the solid support, a porous oxide layer comprising transition metal oxide nanoparticles is disposed on the first noble metal nanoparticles and a second noble metal nanoparticles is disposed on the porous oxide layer. The porous oxide layer prevents contact between the first noble metal nanoparticles and the second noble metal nanoparticles and has a mean pore size of 2 to 30 nm.

PROCESS FOR 3D PRINTING

The present invention relates to a suspension comprising 50-95% by weight of the total suspension (w/w) of at least one metallic material and/or ceramic material and/or polymeric material and/or solid carbon containing material; and at least 5% by weight of the total suspension of one or more fatty acids or derivatives thereof. In addition, the invention relates to uses of such suspension in 3D printing processes.

PROCESS FOR 3D PRINTING

The present invention relates to a suspension comprising 50-95% by weight of the total suspension (w/w) of at least one metallic material and/or ceramic material and/or polymeric material and/or solid carbon containing material; and at least 5% by weight of the total suspension of one or more fatty acids or derivatives thereof. In addition, the invention relates to uses of such suspension in 3D printing processes.

AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE

Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.

AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE

Methods for producing the amorphous metal oxide semiconductor layer where amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The methodology for producing the amorphous metal oxide semiconductor layer includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150° C. or higher and lower than 300° C.

SYSTEM AND METHOD OF MAKING PRINTED ARTICLES

A system for forming a product with different size particles is disclosed. The system comprises at least one print head region configured to retain a first group of print heads configurable to additively print at least a first portion of the product with a first material and a second group of print heads configurable to additively print at least a second portion of the product with a second material. The described system may also comprise a processor configured to regulate the first group of print heads and the second group of print heads to distribute the first material and the second material. A method of making an object by ink jet printing using the disclosed system is also disclosed.