Patent classifications
C04B35/453
Sputtering Target And Method For Manufacturing The Same
A ceramic sputtering target, wherein when a cross-sectional structure of a sputtering surface is observed with an electron microscope, an amount of microcracks defined below is 50 μm/mm or less, and after performing a peel test on the sputtering surface, an area ratio of peeled particles confirmed by observing the cross-sectional structure with an electron microscope is 1.0% or less.
Amount of microcracks=frequency of microcracks×average depth of microcracks
Sputtering Target And Method For Manufacturing The Same
A ceramic sputtering target, wherein when a cross-sectional structure of a sputtering surface is observed with an electron microscope, an amount of microcracks defined below is 50 μm/mm or less, and after performing a peel test on the sputtering surface, an area ratio of peeled particles confirmed by observing the cross-sectional structure with an electron microscope is 1.0% or less.
Amount of microcracks=frequency of microcracks×average depth of microcracks
Multilayer Component and Process for Producing Multilayer Component
A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.
Multilayer Component and Process for Producing Multilayer Component
A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.
METAL-CERAMIC COMPOSITE FOR FUEL CELL ANODE AND METHOD FOR PREPARING THE SAME
A metal-ceramic composite for a fuel cell anode is disclosed. In the metal-ceramic composite, the content of the metal is greatly reduced and the intervals between the metal particles are maintained constant, achieving improved activity and conductivity. The metal-ceramic composite includes a metal catalyst raw material and a mixed-conductive ceramic. The metal catalyst raw material is present in an amount such that the content of the metal catalyst nanoparticles in the metal-ceramic composite is significantly lower than in conventional metal-ceramic composites. The presence of a small amount of the metal catalyst nanoparticles in the metal-ceramic composite minimizes the occurrence of stress resulting from a change in the volume of the metal catalyst and provides a solution to the problem of defects, achieving improved life characteristics. Also disclosed is a method for preparing the metal-ceramic composite.
METHOD FOR MANUFACTURING SPUTTERING TARGET
A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.
Zn—Sn—O based oxide sintered body and method for producing the same
[Object] Provided are a Zn—Sn—O-based oxide sintered body which is used as a sputtering target or a tablet for vapor deposition and which is resistant to crack formation and the like during film formation, and a method for producing the same. [Solving means] The oxide sintered body is characterized in that tin is contained with an atomic ratio of Sn/(Zn+Sn) being 0.01 to 0.6, an average crystal particle diameter of the sintered body is 4.5 μm or less, and a degree of orientation represented by I.sub.(222)/[I.sub.(222)+I.sub.(400)] is 0.52 or more, where I.sub.(222) and I.sub.(400) represent integrated intensities of the (222) plane and the (400) plane of a Zn.sub.2SnO.sub.4 phase measured by X-ray diffraction using the CuKα radiation. The oxide sintered body has an improved mechanical strength, so that the oxide sintered body is resistant to breakage during processing of the sintered body and also is resistant to breakage and crack formation during film formation of transparent conductive films when used as a sputtering target or a tablet for vapor deposition.
Zn—Sn—O based oxide sintered body and method for producing the same
[Object] Provided are a Zn—Sn—O-based oxide sintered body which is used as a sputtering target or a tablet for vapor deposition and which is resistant to crack formation and the like during film formation, and a method for producing the same. [Solving means] The oxide sintered body is characterized in that tin is contained with an atomic ratio of Sn/(Zn+Sn) being 0.01 to 0.6, an average crystal particle diameter of the sintered body is 4.5 μm or less, and a degree of orientation represented by I.sub.(222)/[I.sub.(222)+I.sub.(400)] is 0.52 or more, where I.sub.(222) and I.sub.(400) represent integrated intensities of the (222) plane and the (400) plane of a Zn.sub.2SnO.sub.4 phase measured by X-ray diffraction using the CuKα radiation. The oxide sintered body has an improved mechanical strength, so that the oxide sintered body is resistant to breakage during processing of the sintered body and also is resistant to breakage and crack formation during film formation of transparent conductive films when used as a sputtering target or a tablet for vapor deposition.
Cylindrical sputtering target, cylindrical compact, manufacturing method of cylindrical sputtering target, and manufacturing method of cylindrical sintered compact
A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.
Cylindrical sputtering target, cylindrical compact, manufacturing method of cylindrical sputtering target, and manufacturing method of cylindrical sintered compact
A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.