C04B35/505

ABRASIVE PARTICLES AND METHODS OF FORMING SAME
20170335155 · 2017-11-23 ·

An abrasive particle having a body including a first major surface, a second major surface opposite the first major surface, and a side surface extending between the first major surface and the second major surface, such that a majority of the side surface comprises a plurality of microridges.

Y.SUB.2.O.SUB.3.—ZrO.SUB.2 .erosion resistant material for chamber components in plasma environments
11667577 · 2023-06-06 · ·

A method of manufacturing a chamber component for a processing chamber comprises forming a green body using a Y.sub.2O.sub.3—ZrO.sub.2 powder consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2; and sintering the green body to produce a sintered ceramic body consisting essentially of one or more phase of Y.sub.2O.sub.3—ZrO.sub.2, the sintered ceramic body consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2.

Y.SUB.2.O.SUB.3.—ZrO.SUB.2 .erosion resistant material for chamber components in plasma environments
11667577 · 2023-06-06 · ·

A method of manufacturing a chamber component for a processing chamber comprises forming a green body using a Y.sub.2O.sub.3—ZrO.sub.2 powder consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2; and sintering the green body to produce a sintered ceramic body consisting essentially of one or more phase of Y.sub.2O.sub.3—ZrO.sub.2, the sintered ceramic body consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2.

Y.SUB.2.O.SUB.3.—ZrO.SUB.2 .erosion resistant material for chamber components in plasma environments
11667577 · 2023-06-06 · ·

A method of manufacturing a chamber component for a processing chamber comprises forming a green body using a Y.sub.2O.sub.3—ZrO.sub.2 powder consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2; and sintering the green body to produce a sintered ceramic body consisting essentially of one or more phase of Y.sub.2O.sub.3—ZrO.sub.2, the sintered ceramic body consisting essentially of 55-65 mol % Y.sub.2O.sub.3 and 35-45 mol % ZrO.sub.2.

Erosion resistant metal oxide coatings

Embodiments of the present disclosure relate to articles, coated articles and methods of coating such articles with a rare earth metal containing oxide coating. The coating can contain at least a first metal (e.g., a rare earth metal, tantalum, zirconium, etc.) and a second metal that have been co-deposited onto a surface of the article. The coating can include a homogenous mixture of the first metal and the second metal and does not contain mechanical segregation between layers in the coating.

Erosion resistant metal oxide coatings

Embodiments of the present disclosure relate to articles, coated articles and methods of coating such articles with a rare earth metal containing oxide coating. The coating can contain at least a first metal (e.g., a rare earth metal, tantalum, zirconium, etc.) and a second metal that have been co-deposited onto a surface of the article. The coating can include a homogenous mixture of the first metal and the second metal and does not contain mechanical segregation between layers in the coating.

ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS

A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 .Math.m. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol% to less than 100 mol% of Y.sub.2O.sub.3, over 0 mol% to 60 mol% of ZrO.sub.2, and 0 mol% to 9 mol% of Al.sub.2O.sub.3.

ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS

A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 .Math.m. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol% to less than 100 mol% of Y.sub.2O.sub.3, over 0 mol% to 60 mol% of ZrO.sub.2, and 0 mol% to 9 mol% of Al.sub.2O.sub.3.

METHOD FOR FABRICATING CHAMBER PARTS

One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of Si.sub.vY.sub.wMg.sub.xAl.sub.yO.sub.z. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of Si.sub.vY.sub.wMg.sub.xAl.sub.yO.sub.z.

METHOD FOR FABRICATING CHAMBER PARTS

One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of Si.sub.vY.sub.wMg.sub.xAl.sub.yO.sub.z. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of Si.sub.vY.sub.wMg.sub.xAl.sub.yO.sub.z.