A method for producing a three-dimensionally shaped object by stacking layers includes forming each layer using a three-dimensional shape composition containing particles, measuring the thickness of the layer, and ejecting onto the layer a liquid binder containing a binding agent capable of binding the particles. For the ejecting, the amount of the liquid binder to be ejected per unit area of the layer when viewed from above is adjusted according to the result of the measuring.

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.

The present disclosure is directed to a low cost sintering process for the preparation of gadolinium oxysulfide having a general formula of Gd.sub.2O.sub.2S, referred to as GOS, scintillation ceramics, comprising uniaxial hot pressing primary sintering and hot isostatic pressing secondary sintering.

The present disclosure is directed to a rapid process for the preparation of gadolinium oxysulfide having a general formula of Gd.sub.2O.sub.2S, referred to as GOS, scintillation ceramics by using the combination of spark plasma primary sintering (SPS) and hot isostatic pressing secondary sintering.

The present disclosure is directed to a rapid process for the preparation of gadolinium oxysulfide having a general formula of Gd.sub.2O.sub.2S, referred to as GOS, scintillation ceramics by using the combination of spark plasma primary sintering (SPS) and hot isostatic pressing secondary sintering.

A method of preparing a fine powder of calcium lanthanoid sulfide is disclosed. The method includes spraying soluble calcium and lanthanoid salts into at least one precipitating solution to form a precipitate comprising insoluble calcium and lanthanoid salts, optionally, oxidizing the precipitate comprising insoluble calcium and lanthanoid salts, and sulfurizing the optionally oxidized precipitate to form a fine powder of calcium lanthanoid sulfide. An alternative method for forming the powder is by flame pyrolysis. The calcium lanthanoid sulfide powder produced by either method can have an impurity concentration of less than 100 ppm, a carbon concentration of less than 200 ppm, a BET surface area of at least 50 m.sup.2/g, and an average particle size of less than 100 nm.

A method of preparing a fine powder of calcium lanthanoid sulfide is disclosed. The method includes spraying soluble calcium and lanthanoid salts into at least one precipitating solution to form a precipitate comprising insoluble calcium and lanthanoid salts, optionally, oxidizing the precipitate comprising insoluble calcium and lanthanoid salts, and sulfurizing the optionally oxidized precipitate to form a fine powder of calcium lanthanoid sulfide. An alternative method for forming the powder is by flame pyrolysis. The calcium lanthanoid sulfide powder produced by either method can have an impurity concentration of less than 100 ppm, a carbon concentration of less than 200 ppm, a BET surface area of at least 50 m.sup.2/g, and an average particle size of less than 100 nm.

An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure:
A.sub.xM.sub.yCh.sub.z  Chemical Formula 1 wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, Ch is S, Se, or Te, x is a number from 1 to 3, y is a number from 1 to 3, and z is a number from 2 to 14.

An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure:
A.sub.xM.sub.yCh.sub.z  Chemical Formula 1 wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, Ch is S, Se, or Te, x is a number from 1 to 3, y is a number from 1 to 3, and z is a number from 2 to 14.