Patent classifications
C04B35/547
DENSITY ENHANCEMENT METHODS AND COMPOSITIONS
The present invention relates to granular composite density enhancement, and related methods and compositions. The applications where these properties are valuable include but are not limited to: 1) additive manufacturing (“3D printing”) involving metallic, ceramic, cermet, polymer, plastic, or other dry or solvent-suspended powders or gels, 2) concrete materials, 3) solid propellant materials, 4) cermet materials, 5) granular armors, 6) glass-metal and glass-plastic mixtures, and 7) ceramics comprising (or manufactured using) granular composites.
DENSITY ENHANCEMENT METHODS AND COMPOSITIONS
The present invention relates to granular composite density enhancement, and related methods and compositions. The applications where these properties are valuable include but are not limited to: 1) additive manufacturing (“3D printing”) involving metallic, ceramic, cermet, polymer, plastic, or other dry or solvent-suspended powders or gels, 2) concrete materials, 3) solid propellant materials, 4) cermet materials, 5) granular armors, 6) glass-metal and glass-plastic mixtures, and 7) ceramics comprising (or manufactured using) granular composites.
Doped materials/alloys and hot isostatic pressing method of making same
A method of forming a doped substrate comprises heating a substrate comprising a layer of a dopant on at least one surface to a predetermined temperature; applying a predetermined degree of isostatic external pressure on the surface of said substrate at said predetermined temperature for a time sufficient to induce thermal migration of the dopant into the substrate to provide a doped substrate; and removing the isostatic pressure and cooling the doped substrate to about room temperature. The substrate is a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, and the substrate may be optically transparent. The dopant comprises one or more transition metals, one or more rare earth elements, or a combination of both. The layer of a dopant comprises one or more segregated layers of distinct chemical species. The isostatic pressure and elevated temperature may be applied simultaneously or sequentially.
Doped materials/alloys and hot isostatic pressing method of making same
A method of forming a doped substrate comprises heating a substrate comprising a layer of a dopant on at least one surface to a predetermined temperature; applying a predetermined degree of isostatic external pressure on the surface of said substrate at said predetermined temperature for a time sufficient to induce thermal migration of the dopant into the substrate to provide a doped substrate; and removing the isostatic pressure and cooling the doped substrate to about room temperature. The substrate is a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, and the substrate may be optically transparent. The dopant comprises one or more transition metals, one or more rare earth elements, or a combination of both. The layer of a dopant comprises one or more segregated layers of distinct chemical species. The isostatic pressure and elevated temperature may be applied simultaneously or sequentially.
Doped materials/alloys and hot isostatic pressing method of making same
A method of forming a doped substrate comprises heating a substrate comprising a layer of a dopant on at least one surface to a predetermined temperature; applying a predetermined degree of isostatic external pressure on the surface of said substrate at said predetermined temperature for a time sufficient to induce thermal migration of the dopant into the substrate to provide a doped substrate; and removing the isostatic pressure and cooling the doped substrate to about room temperature. The substrate is a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, and the substrate may be optically transparent. The dopant comprises one or more transition metals, one or more rare earth elements, or a combination of both. The layer of a dopant comprises one or more segregated layers of distinct chemical species. The isostatic pressure and elevated temperature may be applied simultaneously or sequentially.
Magnesium-based thermoelectric conversion material, magnesium-based thermoelectric conversion element, and method for producing magnesium-based thermoelectric conversion material
A magnesium-based thermoelectric conversion material made of a sintered compact of a magnesium compound, in which, in a cross section of the sintered compact, a Si-rich metallic phase having a higher Si concentration than in magnesium compound grains is unevenly distributed in a crystal grain boundary between the magnesium compound grains, an area ratio of the Si-rich metallic phase is in a range of 2.5% or more and 10% or less, and a number density of the Si-rich metallic phase having an area of 1 μm.sup.2 or more is in a range of 1,800/mm.sup.2 or more and 14,000/mm.sup.2 or less.
THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE, AND OPTICAL SENSOR
A thermoelectric conversion material is represented by a composition formula Ag.sub.2S.sub.(1-x)Se.sub.x, where x has a value of greater than 0.01 and smaller than 0.6.
Ceramic and ceramic composite components
Thermally-conductive ceramic and ceramic composite components suitable for high temperature applications, systems having such components, and methods of manufacturing such components. The thermally-conductive components are formed by a displacive compensation of porosity (DCP) process and are suitable for use at operating temperatures above 600° C. without a significant reduction in thermal and mechanical properties.
Ceramic and ceramic composite components
Thermally-conductive ceramic and ceramic composite components suitable for high temperature applications, systems having such components, and methods of manufacturing such components. The thermally-conductive components are formed by a displacive compensation of porosity (DCP) process and are suitable for use at operating temperatures above 600° C. without a significant reduction in thermal and mechanical properties.
Sulfide-Based Solid Electrolyte and Preparation Method Thereof
A sulfide-based solid electrolyte contains a nickel (Ni) element and a halogen element. For example, a sulfide-based solid electrolyte can include, with respect to 100 parts by mole of a mixture of lithium sulfide (Li.sub.2S) and diphosphorus pentasulfide (P.sub.2S.sub.5), 5 parts by mole to 20 parts by mole of nickel sulfide (Ni.sub.3S.sub.2), and 5 parts by mole to 40 parts by mole of lithium halide.