A metal-ceramic substrate having at least one ceramic layer (2), which is provided on a first surface side (2a) with at least one first metallization (3) and on a second surface side (2b), opposite from the first surface side (2a), with a second metallization (4), wherein the first metallization (3) is formed by a film or layer of copper or a copper alloy and is connected to the first surface side (2a) of the ceramic layer (2) with the aid of a “direct copper bonding” process. The second metallization (4) is formed by a layer of aluminum or an aluminum alloy.

A method for manufacturing a pressure measuring cell, which has a ceramic platform and a ceramic measuring membrane, wherein the measuring membrane is joined with the platform pressure tightly by an active hard solder, or braze, wherein the method includes: providing the platform, the measuring membrane and the active hard solder, or braze, positioning the active hard solder, or braze, between the platform and the measuring membrane; melting the active hard solder, or braze, by irradiating the active hard solder, or braze, by a laser, wherein the irradiating of the active hard solder, or braze, occurs through the measuring membrane; and letting the active hard solder, or braze, solidify by cooling.

The invention relates to a method of joining substrates. It is the object of the invention in this respect to join substrates of substrate materials together without having to exert an increased effort for a coating with additional coating processes to be carried out and to be able to achieve a good quality of the join connection in so doing. In the method in accordance with the invention a pretreatment of at least one join surface of a substrate to be joined is carried out in low pressure oxygen plasma prior to the actual joining. On the joining, a contact force acts on the substrates to be joined in the range 2 kPa to 5 MPa and in this process a heat treatment is carried out at an elevated temperature of at least 100° C. and at under pressure conditions of a maximum of 10 mbar, preferably <10.sup.−3 mbar.

In some examples, a method may include depositing, from a slurry comprising particles including silicon metal, a bond coat precursor layer including the particles comprising silicon metal directly on a ceramic matrix composite substrate. The method also may include locally heating the bond coat precursor layer to form a bond coat comprising silicon metal. Additionally, the method may include forming a protective coating on the bond coat. In some examples, an article may include a ceramic matrix composite substrate, a bond coat directly on the substrate, and a protective coating on the bond coat. The bond coat may include silicon metal and a metal comprising at least one of Zr, Y, Yb, Hf, Ti, Al, Cr, Mo, Nb, Ta, or a rare earth metal.

A module having a power semiconductor device and a ceramic capacitor which is configured for cooling the power semiconductor device.

A method for producing a member for a semiconductor manufacturing apparatus includes (a) a step of providing an electrostatic chuck, a supporting substrate, and a metal bonding material, the electrostatic chuck being made of a ceramic and having a form of a flat plate, the supporting substrate including a composite material having a difference in linear thermal expansion coefficient at 40 to 570° C. from the ceramic of 0.2×10.sup.−6/K or less in absolute value, and (b) a step of interposing the metal bonding material between a concave face of the supporting substrate and a face of the electrostatic chuck opposite to a wafer mounting face, and thermocompression bonding the supporting substrate and the electrostatic chuck at a predetermined temperature to deform the electrostatic chuck to the shape of the concave face.

A method of manufacturing a metal-coated member includes: providing a composite ceramic member including a ceramic part, and a connection part connected to the ceramic part; disposing a precious metal layer on a surface region that includes at least a portion of a surface of the ceramic part and a portion of a surface of the connection part, the precious metal layer including a precious metal; and removing at least a portion of the precious metal layer that is on the surface of the ceramic part and delineated by the boundary between the ceramic part and the connection part. The connection part has stronger adhesion to the precious metal than the ceramic part.

A ceramic heater includes: a ceramic plate which is provided with a wafer placement surface on an upper surface and in which a heating resistor is internally embedded; a ceramic tubular shaft with an upper end bonded to a lower surface of the plate; and power feeding members which penetrate a peripheral wall part of the tubular shaft in a vertical direction, and are electrically connected to the heating resistor. The power feeding members are embedded in the peripheral wall part of the tubular shaft, and are in tight contact with a ceramic material of the tubular shaft.

A layer arrangement for an electrostatic chuck comprises a first ceramic layer; a second ceramic layer; a metallised layered disposed between the first and second ceramic layers. The first ceramic layer comprises at least 90.0 wt % 5 alumina, titania, ZrO.sub.2, Y2O.sub.3, AlN, Si.sub.3N.sub.4, SiC, transition metal oxides or combinations thereof; and in the range of 0.1 to 10.0 wt % tantalum oxide (Ta.sub.2O.sub.5).

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.