A coil component includes a porous ceramic portion having pores, a coil portion embedded in the porous ceramic portion, and outer electrodes which are provided on an outer surface of the porous ceramic portion and electrically connected to the coil portion. The porous ceramic portion has a porosity of 10% by volume or more and 90% by volume or less (i.e., from 10% by volume to 90% by volume), and the pores are filled with a cured product of a resin composition containing a cycloaliphatic epoxy resin and an acid anhydride-based curing agent.

A semiconductor production device component includes a first ceramic member including an AlN-based material, a second ceramic member including an AlN-based material, and a joint layer disposed between the first ceramic member and the second ceramic member so as to join the first ceramic member and the second ceramic member to each other. The joint layer includes a composite oxide containing Gd and Al, and Al.sub.2O.sub.3, and is free from AlN.

A multi-layered structural element and a method for producing a multi-layered structural element are disclosed. In an embodiment dielectric green sheets, at least one ply containing an auxiliary material which contains at least one copper oxide and layers containing electrode material are provided and arranged alternately one above another. These materials are debindered and sintered. The copper oxide is reduced to form the copper metal and the at least one ply is degraded during debindering and sintering.

A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be on a non-diffusable type, such as aluminum nitride, alumina, beryllium oxide, and zirconia, and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

A method of connecting two CMC substrates that includes providing two substrates; placing one substrate approximate to the other substrate, such that at least a portion of the two substrates overlap and define a brazing area; placing a brazing material approximate the brazing area; defining a primary raster pattern that encompasses the brazing area and a portion of the two substrates outside the brazing area; defining a secondary raster pattern that encompasses the brazing area; allowing a laser to scan the primary raster pattern to preheat the brazing area to a temperature below the brazing material's melting point; allowing the laser to scan the secondary raster pattern to heat the brazing area to a temperature that is above the brazing material's melting point; melting and allowing the brazing material to flow within the brazing area; and cooling the brazing area to form a brazed joint connecting the two substrates.

According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.

A ceramic structural body includes a substrate that is composed of a ceramic(s), a hole that is opened on a surface of the substrate, and a seal material that is positioned at an opening portion of the hole.

A stacked structure includes a first structure formed of a composite sintered body that contains AlN and MgAl.sub.2O.sub.4 as main phases, and a second structure formed of a ceramic sintered body and stacked on and bonded to the first structure. A difference in linear thermal expansion coefficient between the first structure and the second structure is less than or equal to 0.3 ppm/K.

A ceramic material including at least erbium oxide (Er2O3)-stabilized zirconium oxide (ZrO2). The erbium oxide-stabilized zirconium oxide can be used as ceramic thermal barrier layer. Crack resistance of such ceramic materials is considerably increased by using erbium oxide-stabilized zirconium oxide.

A brazing process using Nickel(Ni)-Carbon as graphite(Cg) alloys, Ni-Cg-Molybdenum(Mo) alloys, and Ni-Cobalt(Co)-Cg-Mo alloys for brazing together ceramics, ceramics to metals, metals to metals. Semiconductor processing equipment made with the use of Ni-Cg alloys, such as heaters and chucks. Semiconductor processing equipment components and industrial equipment components using a highly wear resistant surface layer, such as sapphire, joined to a substrate such as a ceramic, with a Ni-Cg alloy braze.