In a manufacturing method for a member for a semiconductor manufacturing device, a metal terminal and a ceramic member are joined by using a paste that contains a resin and a metal particle(s), and a metal fine particle(s) that has/have a particle size(s) of 100 nm or less in the metal particle(s) account(s) for 1% by mass or more of 100% by mass of the metal particle(s). A member for a semiconductor manufacturing device includes a metal terminal, a ceramic member, and a joining part that connects the metal terminal and the ceramic member. The joining part contains a metal particle(s).

A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of an aluminum oxide, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of an interface between the copper member and the ceramic member; and a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase.

A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of an aluminum nitride, wherein, the copper member and the ceramic member are bonded to each other, and a Mg solid solution layer is provided between the copper member and the ceramic member and contains Mg in a state of a solid solution in a Cu primary phase.

A ceramic structural body includes a substrate that is composed of a ceramic(s), a hole that is opened on a surface of the substrate, and a seal material that is positioned at an opening portion of the hole.

A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 μm or less and a number density of 0.015/μm2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900° C. for a retention time of 10 to 60 minutes.

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, wherein a ceramic substrate and a copper plate are bonded by a braze material containing Ag and Cu, at least one active metal component selected from Ti and Zr, and at least one element selected from among In, Zn, Cd, and Sn, wherein a braze material layer, after bonding, has a continuity ratio of 80% or higher and a Vickers hardness of 60 to 85 Hv.

A method for manufacturing active metal-brazed a nitride ceramics substrate having excellent joining strength, includes: a step of preparing a mixed raw material; a step of forming a green sheet of the mixed raw material by a tape casting method; a step of removing a binder by performing degreasing; a step of performing sintering; a step of forming an aluminum nitride sintered substrate by performing gradual cooling; and a step of printing a conductive wiring pattern with active metal paste on the aluminum nitride sintered substrate.

An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.

Cutting elements include a diamond-bonded body attached with a substrate. The substrate has a coercivity of greater than about 200 Oe, and has a magnetic saturation of from about 73 to 90. The diamond-bonded body has a compressive stress at the surface of greater than about 0.9 GPa after heat treatment, and greater than about 1.2 GPa prior to heat treatment.

A method of manufacturing a ceramics-metal bonded body according to the present invention is a method of manufacturing a ceramics-metal bonded body in which a metal layer is bonded to at least one surface of a ceramics substrate, and comprises: a groove-forming step of forming a groove extending across a bonding region of a ceramics substrate to which a metal layer is bonded; and a bonding step of, after the groove-forming step, forming a metal layer by stacking, in the bonding region of the ceramics substrate, a metal plate of an aluminum or aluminum alloy with a thickness of less than or equal to 0.4 mm, via an Al—Si based brazing material foil, and bonding the metal plate to the bonding region by heating while applying load in a stacking direction.