Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.

An aluminum nitride-based sintered compact includes: aluminum nitride crystal particles containing Mg; composite oxide containing a rare earth element and Al, the composite oxide having a garnet crystal structure; and composite oxynitride containing Mg and Al. Particles of the composite oxide and particles of the composite oxynitride are interspersed between the aluminum nitride crystal particles. The composite oxide may include Y. A content of Mg in the aluminum nitride crystal particles may fall in a range of 0.1 mol % or more and 1.0 mol % or less, based on a total of all metal elements contained in the aluminum nitride crystal particles taken as 100 mol %. A semiconductor holding device includes the aluminum nitride-based sintered compact; and an electrostatic adsorptive electrode.

Disclosed are methods for forming boron nitride-containing aggregates that exhibit improved wear by attrition, and resulting filled polymers that exhibit significantly improved thermal conductivity. The boron nitride-containing aggregates are prepared according to a method that includes wet granulating boron nitride powder with a granulation solution to form wet boron nitride-containing granules; and drying the wet boron nitride-containing granules to cause evaporation of solvent in the granulation solution, thereby forming boron nitride-containing granules. Sintering achieves the desired boron nitride-containing aggregates.

A method for making a fuel rod cladding tube and a cladding tube are described. The method includes wrapping ceramic fibers, for example, SiC fibers in a SiC matrix, around a tube formed from a metal alloy, such as a zirconium alloy. The interstices of the SiC wrappings on the tube are at least partially filled with SiC nano-sized particles. The surface of the filled tube is exposed by atomic layer deposition, at temperatures ranging from 25° C. to 600° C., to at least one cycle of alternating, non-overlapping pulses of gaseous precursors containing carbon and silicon to form a SiC monolayer. The step of filling the interstices of the SiC wrappings on the tube with SiC nano-sized particles fills large voids in the SiC wrapping. The step of exposing the surface of the particle filled SiC windings to at least one cycle of gaseous pulses fills small voids in the SiC wrapping.

A method for making ceramic fixed partial dentures comprising separating the as-sintered partial denture structure, rejoining the retainers and pontic with glass, which forms a strong joint between the retainers and pontic after sintering. This method may produce ceramic long-span fixed partial dentures with a better fit.

Aspects of the present disclosure relate to a piezoelectric device having at least one piezoelectric element, which has a support plane oriented to a force introduction element, wherein in the event of a thermal loading of the piezoelectric device in the support plane, expansion differences between the piezoelectric element and the force introduction element occur. To compensate for shear loadings, at least one transition element is arranged between the piezoelectric element and the force introduction element, the E-module of which is smaller than the E-module of the piezoelectric element in the support plane.

The present application provides vanadium dioxide doped with Ti, or vanadium dioxide further doped with other atoms selected from the group of W, Ta, Mo, and Nb. The vanadium dioxide of the present application is excellent in moisture resistance and in which deterioration of endothermic characteristics due to moisture is suppressed.

A composite polycrystal includes: a polycrystalline diamond phase including a plurality of diamond particles; and non-diamond phases composed of non-diamond carbon. The non-diamond phases are distributed in the polycrystalline diamond phase. An average value of projected area equivalent circle diameters of the non-diamond phases is not more than 1000 nm.

A particle mixture having: ZrO.sub.2+HfO.sub.2+Y.sub.2O.sub.3+CeO.sub.2; 0%≤Al.sub.2O.sub.3≤1.5%; other oxides than ZrO.sub.2, HfO.sub.2, Y.sub.2O.sub.3, CeO.sub.2 and Al.sub.2O.sub.3: between 0.5% and 12%. The contents of Y.sub.2O.sub.3 and CeO.sub.2, on the basis of the sum of ZrO.sub.2, HfO.sub.2, Y.sub.2O.sub.3 and CeO.sub.2, being such that 1.8%≤Y.sub.2O.sub.3≤3% and 0.1%≤CeO.sub.2≤0.9%. The mixture includes between 0.5% and 10% of particles of an oxide pigment. The content of other oxides and which are not included in the oxide pigment being less than 2%. The particles of the oxide pigment including, for more than 95%, of a material chosen from: oxide(s) of perovskite structure or equivalent of precursor(s) of these oxides, oxides of spinal structure or an equivalent amount of precursor(s) of these oxides, and oxides of hematite structure E.sub.2O.sub.3, oxides of rutile structure FO.sub.2, with “E” and “F” being chosen.

Provided is a crystalline silicon carbide fiber containing silicon carbide, boron nitride, and zirconium carbide and having a content of Si of 64% by weight or more and a content of C of 28% by weight or more, in which the average particle size of SiC crystal grains is 100 nm or more.