Patent classifications
C04B2235/80
MXENE COMPOSITIONS FEATURING FIVE ATOMIC LAYERS
Provided are 5-layered MXene materials having the formulas M.sub.5X.sub.4T.sub.x; (M′aM″b)X.sub.4T.sub.x (where a+b=5); and (M′.sub.aM″.sub.b).sub.5X.sub.4T.sub.x (where a+b=1). Also provided are related methods, compositions, and applications.
Silicon carbide body with localized diamond reinforcement
A reaction-bonded silicon carbide (SiC) body is produced by: providing a preform including ceramic elements and carbon, and one or more surface features; providing a powder which includes diamond particles and carbon; locating the powder in the surface feature(s); and infiltrating the preform and the powder with molten silicon (Si) to form reaction-bonded SiC in the preform, and to form reaction-bonded SiC coatings on the diamond particles. The present disclosure also relates to a device/component which includes: a main body portion and discrete elements located at least partially within the main body portion. The main body portion may include reaction-bonded SiC and Si, but not diamond, while the discrete elements include diamond particles, reaction-bonded SiC coatings surrounding the diamond particles, and Si. According to the present disclosure, diamond may be advantageously located only where it is needed.
Multi-phasic ceramic composite
A ceramic composite can include a first ceramic phase and a second ceramic phase. The first ceramic phase can include a silicon carbide. The second phase can include a boron carbide. In an embodiment, the silicon carbide in the first ceramic phase can have a grain size in a range of 0.8 to 200 microns. The first phase, the second phase, or both can further include a carbon. In another embodiment, at least one of the first ceramic phase and the second ceramic phase can have a median minimum width of at least 5 microns.
OXIDE SINTERED BODY
An oxide sintered body may include zinc, magnesium, a positive trivalent or positive tetravalent metal element X, and oxygen as constituent elements. The atomic ratio of the metal element X to the sum of the zinc, the magnesium, and the metal element X [X/(Zn+Mg+X)] may be 0.0001 or more and 0.6 or less. The atomic ratio of the magnesium to the sum of the zinc and the magnesium [Mg/(Zn+Mg)] may be 0.25 or more and 0.8 or less.
ENVIRONMENTAL BARRIER COATING
An environmental barrier coating includes a barrier layer which includes a matrix, diffusive particles, and gettering particles; and a calcium-magnesia alumina-silicate (CMAS)-resistant component. The CMAS-resistant component includes hafnium silicate and a rare earth hafnate. An article and a method of fabricating an article are also disclosed.
Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device
The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.
ALUMINUM TITANATE-CONTAINING PARTICLES, AT-CONTAINING GREEN AND CERAMIC HONEYCOMB BODIES, BATCH MIXTURES, AND METHODS OF MANUFACTURE
Aluminum titanate-containing particles made up of a conglomerate of multiple partial grains. The aluminum titanate-containing particles are formed by breaking apart ceramic bodies along cracks, which are formed predominantly through the grains, rather than between the grains. Batch mixtures forming the aluminum titanate-containing particles, as well as batch mixtures utilizing the aluminum titanate particles are disclosed. Green bodies, such as green honeycomb bodies having peak intensity ratios (PIRs) in an axial direction of less than or equal to 0.50, ceramic honeycomb bodies, methods of manufacturing green honeycomb bodies, and ceramic honeycomb bodies are provided, as are other aspects.
Ceramic slurries with photoreactive-photostable hybrid binders
Ceramic slurries may include ceramic particles, a photoreactive-photostable hybrid binder, and a photoinitiator. The photoreactive-photostable hybrid binder may include a photoreactive organic resin component, a photoreactive siloxane component, and one or more photostable siloxane components. Methods of forming a ceramic part may include curing a portion of a ceramic slurry by exposing the portion of the ceramic slurry to light to form a green ceramic part, and partially firing the green ceramic part to form a brown ceramic part. The brown ceramic part may be sintered at or above a sintering temperature of the ceramic particles to form a ceramic part, wherein sintering includes heating the brown ceramic part to a sufficient temperature to promote reaction bonding that converts silica from the photoreactive-photostable hybrid binder into silicates that bond with the ceramic particles.
CERAMIC ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE SAME
A ceramic electronic device includes a multilayer chip in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers including Ni as a main phase are alternately stacked. At least one of the plurality of dielectric layers includes a secondary phase including Si, at an interface between the at least one of the plurality of dielectric layers and one of the plurality of internal electrode layers next to the at least one of the plurality of dielectric layers. The one of the plurality of internal electrode layers includes a layer including an additive element including one or more of Au, Pt, Cu, Fe, Cr, Zn, and In, at a region contacting the secondary phase at the interface.
ARMOR PLATING MADE OF FINE-GRAIN BORON CARBIDE AND SILICON CARBIDE
An antiballistic armor-plating component, includes a ceramic body made of a material comprising, as percentages by volume, between 35% and 55% of silicon carbide, between 20% and 50% of boron carbide, between 15% and 35% of a metallic silicon phase or of a metallic phase including silicon.