A method for producing a gas-tight metal-ceramic join is disclosed. In an embodiment a method includes providing at least one ceramic main body having a first end face and a second end face, applying a metallization to at least a partial region of the end faces of the main body, applying a nickel layer to the metallized partial region of the end faces, applying a brazing paste to the metallized partial region of the first end face and/or the second end face of the main body, drying the brazing paste, and firing the brazing paste.

Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material (3, 13) is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface (5, 15) one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface (5, 15) has an arithmetic mean roughness Ra of 0.9 m or more, a maximum height Rz of 10.0 m or less, and Rz.sub.JIS roughness of 7.0 m or less. A sputtering target (1, 11) is obtained by bonding the obtained target material (3, 13) to a backing body (2, 12) by way of a bonding layer (4, 14).

The present disclosure relates to a gas turbine part, which can be exposed to high temperatures and centrifugal forces within a gas turbine. The gas turbine part can include plural sliced parts, wherein at least one of said sliced parts is made from a ternary ceramic called MAX phase, having the formula M.sub.n+1AX.sub.n, where n=1, 2, or 3, M is an early transition metal such as Ti, V, Cr, Zr, Nb, Mo, Hf, Sc, Ta, and A is an A-group element such as Al, Si, P, S, Ga, Ge, As, Cd, In, Sn, Tl, Pb, and X is C and/or N.

A method of manufacture of a ceramic metallization for ceramic metal transition, and ceramic metal transition itself, for the use in low, medium and high-voltage techniques, which may avoid a brazing foil, and/or overcome problems with the use of thin brazing foils, and/or to make the manufacture easier, but also more effective, wherein, on top of the Ni-layer will be placed an Ag-layer as a third layer, and then the metal part will be laid on top and connected by brazing or tempering.

A ceramic substrate manufacturing method and a ceramic substrate manufactured thereby, may include a seed layer, a brazing filler layer, and a metal foil that are laminated on a ceramic substrate and that are brazed such that the metal foil is firmly bonded to the ceramic substrate by a brazing joint layer. Such methods and devices may substantially improve the adhesion of the metal foil and the ceramic substrate.

There is provided a copper/ceramic bonded body of the present invention in which a copper member made of copper or a copper alloy and a ceramic member made of aluminum nitride or silicon nitride are bonded to each other, in which an active metal nitride layer containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on the ceramic member side between the copper member and the ceramic member, a Mg solid solution layer in which Mg is dissolved in a Cu matrix phase is formed between the active metal nitride layer and the copper member, and the active metal is present in the Mg solid solution layer.

An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 m or less. In the oxide sintered body, the relations 30 atomic %[In]50 atomic %, 20 atomic %[Ga]30 atomic % and 25 atomic %[Sn]45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaO.sub.3 phase which satisfies the relation [InGaO.sub.3]0.05.

A method for manufacturing a ceramic sintered body substrate includes of disposing a first metal paste on a surface of a ceramic substrate, and of firing the ceramic substrate on which the first metal paste is disposed. In the disposing the first metal paste, the first metal paste contains a plurality of first metal powders, a plurality of active metal powders, and a plurality of inorganic fillers excluding metals, and in the firing the ceramic substrate, a firing temperature is equal to or higher than a melting point of the first metal powders.

A heater includes a base body, terminal and joining layer. The base body is made of ceramic. The joining layer contains metal as a principal ingredient and is located between the base body and the terminal. The base body includes a first surface and second surface. The first surface faces an outer side of the base body and includes at least one of a region which is superimposed on the terminal and a region which is located on a periphery of the terminal. The second surface intersects with the first surface and is located on the side closer to an internal portion of the base body on the side away from the first surface. The joining layer extends from the terminal and first surface up to the second surface.

Methods of forming a cutting element include sintering diamond particles at a temperature of at least about 1400 C. under a pressure of at least about 10 GPa in the absence of a metal solvent catalyst so as to form a polycrystalline diamond compact (PDC), providing a barrier material over at least a portion of the PDC, providing a carbide material and a metal binder comprising at least one transition metal element over the barrier material and the PDC, and performing a second sintering process comprising sintering the carbide material, the metal binder, the barrier material, and the PDC at a temperature of at least about 1400 C. under a pressure of at least about 5 GPa to form the cutting element. At least a portion of the PDC proximate an exposed exterior surface of the PDC may be at least substantially free of the metal binder.