A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 μm and less than 200 μm. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 μm and 800 μm.

A method for making ceramic fixed partial dentures comprising separating the as-sintered partial denture structure, rejoining the retainers and pontic with glass, which forms a strong joint between the retainers and pontic after sintering. This method may produce ceramic long-span fixed partial dentures with a better fit.

A method for assembling a zirconia part to a titanium element with braze, the method comprising the following steps: coating a surface of the titanium element with a niobium layer, positioning a braze between the zirconia part and the niobium, the braze being of gold or a gold alloy, heating the whole to a temperature higher than the melting temperature of the braze, and then cooling the whole, whereby an assembly comprising the zirconia part and the titanium element assembled by a brazing joint comprising a first portion of gold or a gold alloy, a second portion formed by a reaction layer comprising intermetallics of the AuNbTi system, and a third portion formed by an oxide reaction layer is obtained.

Implementations of semiconductor packages may include a metallic baseplate, a first insulative layer coupled to the metallic baseplate, a first plurality of metallic traces, each metallic trace of the first plurality of metallic traces coupled to the electrically insulative, one or more semiconductor devices coupled to each one of the first plurality of metallic traces, a second plurality of metallic traces coupled to the one or more semiconductor devices, and a second insulative layer coupled to the metallic traces of the second plurality of metallic traces.

A transaction card includes a card body that may comprise a card body comprising a ceramic material, the card body including a primary surface and a first mating surface. A card backer comprises a metallic material and includes a secondary surface and a second mating surface. A portion of the first mating surface and a portion of the second mating surface are coupled together.

A power electronic substrate includes a metallic baseplate having a first and second surface opposing each other. An electrically insulative layer also has first and second surfaces opposing each other, its first surface coupled to the second surface of the metallic baseplate. A plurality of metallic traces each include first and second surfaces opposing each other, their first surfaces coupled to the second surface of the electrically insulative layer. At least one of the metallic traces has a thickness measured along a direction perpendicular to the second surface of the metallic baseplate that is greater than a thickness of another one of the metallic traces also measured along a direction perpendicular to the second surface of the metallic baseplate. In implementations the electrically insulative layer is an epoxy or a ceramic material. In implementations the metallic traces are copper and are plated with a nickel layer at their second surfaces.

A structure body according to an embodiment of the present disclosure includes: a first base having one surface, and having a density lower than a density that is determined by a crystal structure and a composition of a constituent material; a second base disposed to face the one surface of the first base; and a buffer layer provided between the first base and the second base, and containing at least a metal element.

A method for producing a component includes a) providing at least two preforms each made of a carbon composite material, b) joining the at least two preforms at least at one respective connecting surface to form a composite, in which a joining compound is introduced between the joining surfaces of the preforms and then cured and the joining compound contains silicon carbide and at least one polymer adhesive, and c) siliconizing the composite to form the component. A component, such as an optical component produced thereby, is also provided.

The object of the present invention is an integrally bonded composite component, a method for the production thereof, and the use thereof. The invention particularly relates to integrally bonded transparent ceramic composite components, to a method for the production of such ceramic composite components, and to the use thereof.

To prevent braze stain and improve solder bondability of a semiconductor chip without deteriorating bondability between a metal plate and a ceramic substrate: a producing method of a power-module substrate by braze-bonding a metal plate which is blanked by press working on a metal raw-plate on one surface of a ceramic substrate: in the metal plate, a height of burrs is 0.021 mm or smaller, a thickness of a fracture surface is 0.068 mm or larger; the metal plate is stacked on the ceramic substrate so as to stack a surface thereof on a side at which the burrs are generated is in contact with the one surface of the ceramic substrate and brazed.