PRODUCING METHOD OF POWER-MODULE SUBSTRATE

Abstract

To prevent braze stain and improve solder bondability of a semiconductor chip without deteriorating bondability between a metal plate and a ceramic substrate: a producing method of a power-module substrate by braze-bonding a metal plate which is blanked by press working on a metal raw-plate on one surface of a ceramic substrate: in the metal plate, a height of burrs is 0.021 mm or smaller, a thickness of a fracture surface is 0.068 mm or larger; the metal plate is stacked on the ceramic substrate so as to stack a surface thereof on a side at which the burrs are generated is in contact with the one surface of the ceramic substrate and brazed.

Claims

1. A producing method of a power-module substrate, wherein a metal plate which is formed by blanking of press working is stacked on one surface of a ceramic substrate and bonded by brazing, wherein in the metal plate formed by blanking of the press working, a height of burrs thereof is set to be 0.021 mm or less and a thickness of a fracture surface thereof is set to be 0.068 mm or more, and the metal plate and the ceramic substrate are stacked so that a surface of a side at which the burrs are generated is in contact with the one surface of the ceramic substrate with a brazing material therebetween, and brazed with pressing these members in a stacking direction in a state in which the burrs are pressed to the ceramic substrate.

2. The producing method of the power-module substrate according to claim 1, wherein for forming the metal plate by blanking by the press working, after the blanked metal plate is pushed-back into a blank hole of a skeleton after blanking, then the metal plate is picked out from the blank hole.

3. The producing method of the power-module substrate according to claim 1, wherein for forming the metal plate by blanking by the press working, the metal plate is half-blanked out and then pushed-back, finally the metal plate is blanked.

4. The producing method of the power-module substrate according to claim 1, wherein the metal plate is an aluminum plate.

Description

BRIEF DESCRIPTION OF THE DRAWING

[0022] FIG. 1 It is a side view of a power-module substrate of an embodiment according to the present invention.

[0023] FIG. 2 It is a sectional view showing a part of a forming process of a metal plate sequentially by the parts (a) to (c).

[0024] FIG. 3 It is a sectional view schematically showing a stacked state when the metal plate is bonded on a ceramic substrate.

[0025] FIG. 4 It is a side view showing an example of a pressing tool used for a producing method according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0026] Below, an embodiment of the present invention will be explained referring drawings.

[0027] In a power-module substrate 10 as shown in FIG. 1, a copper plate (a metal plate) 12 to be a circuit layer is stacked on one surface of a ceramic substrate 11 in a thickness direction, an aluminum plate (a metal plate) 13 to be a heat-radiation layer is stacked on the other surface of the ceramic substrate 11 in the thickness direction, and these are bonded by brazing material. A semiconductor chip 14 is mounted on a surface of the copper plate 12 by soldering. A heat sink 15 is bonded on the aluminum plate 13.

[0028] The ceramic substrate 11 is formed from aluminum nitride (AlN), alumina (Al.sub.2O.sub.3), silicon nitride (Si.sub.3N.sub.4) or the like into a thickness of 0.25 mm to 1.0 mm, for example. The copper plate 12 is formed from pure copper such as oxygen-free copper, tough-pitch copper or the like or copper alloy. The aluminum plate 13 is formed from pure aluminum with purity 99.00% or higher or aluminum alloy. Thicknesses of the copper plate 12 and the aluminum plate 13 are 0.1 mm to 10 mm, for example.

[0029] As a desirable example of a combination for the power-module substrate 10 of the present embodiment, for example, the ceramic substrate 11 is MN with a thickness 0.635 mm, the copper plate 12 is a pure copper plate with a thickness 0.3 mm, and the aluminum plate 13 is a 4N-aluminum plate with a thickness 1.6 mm.

[0030] For bonding the ceramic substrate 11 and the copper plate 12, Ag—Ti based or Ag—Cu—Ti based active-metal brazing material is used; for example, brazing material of Ag-27.4 mass % Cu-2.0 mass % Ti. For bonding the ceramic substrate 11 and the aluminum plate 13, Al—Si based or Al—Ge based brazing material is used.

[0031] Below explained will be a producing method of the power-module substrate 10 by bonding the ceramic substrate 11, the copper plate 12, and the aluminum plate 13.

[0032] <Metal Plate Forming Step>

[0033] The copper plate 12 and the aluminum plate 13 are blanking-formed by press working. These are made by the same process, so the copper plate 12 and the aluminum plate 13 are explained as metal plates 50 in this forming step.

[0034] Preparing a metal raw-plate 51 with a coil shape which can be made as the metal plates 50, the metal raw-plate 51 is sent intermittently into a press machine from the coil shape. In the press machine, as shown in a part (a) of FIG. 2, a die 62 having a forming hole 61 for forming the metal raw-plate 51 into the metal plate 50, a punch 63, and a push-back tool 64 fitted in the forming hole 61 of the die 62 are provided. In FIG. 2, the reference symbol 65 denotes a plate presser which presses the metal raw-plate on a surface of the die 62.

[0035] As shown in the part (a) of FIG. 2, the metal raw-plate 51 is sent between the die 62 and the punch 63, then the punch 63 moves downward so as to blank the metal raw-plate 51 as shown in a part (b) of FIG. 2 between an inner peripheral edge of the forming hole 61 of the die 62 while the push-back tool 64 in the forming hole 61 of the die 62 is pressed down. After blanking, the push-back tool 64 moves upward so as to follow an upward movement of the punch 63, and pushes back the metal plate 50 which is blanked as shown in a part (c) of FIG. 2 into a blank hole 52 of the original metal raw-plate 51. The metal raw-plate 51 after the blank hole 52 is formed is called a skeleton. At this time, as shown by an arrow in the part (c) of FIG. 2, the blanked metal plate 50 is pushed up in a counter direction to a blanking direction, shaving is occurred because an inner peripheral surface of the blank hole 52 of the metal raw-plate (the skeleton) 51 and an outer peripheral surface of the blanked metal plate 50 are scratched against each other. As a result, the burrs generated at the outer peripheral edge of the metal plate 50 by blanking are scraped by the inner peripheral surface of the blank hole 52 and decreased.

[0036] The metal plate 50 is pushed back to the blank hole 52 of the metal raw-plate (the skeleton) 51, and then extracted out from the blank hole 52.

[0037] By press working of the metal plate 50 as described above, at the peripheral edge part of one surface of the metal plate 50 becomes a drooped part 55; and burrs 56 are generated at the peripheral edge of the other surface. The side surface is a shear plane 57 with small surface roughness at the side of the drooped part 55, and is a fracture surface 58 with large surface roughness at the side of the burrs 56 are generated. In this metal plate 50, heights of the burrs 56 measured at several points of the peripheral edge of the metal plate 50 are 0.021 mm or smaller; and thicknesses (dimension in the blanking direction) of the fracture surface 58 are 0.068 mm or larger.

[0038] When the metal plate 50 is blanked from the metal raw-plate 51, as shown in the part (b) of FIG. 2, the punch 63 may be inserted at a tip end thereof into the forming hole 61 of the die 62 and moved downward until the metal plate 50 is quite separated from the metal raw-plate 51. It is also possible that the metal plate 50 is cut from the metal raw-plate 51 although the downward movement of the punch 63 is stopped at a stage in which the tip end of the punch 63 does not reach to an opening end of the forming hole 61 of the die 62 (i.e., a half-blanking state) since the punch 63 cuts into the metal raw-plate 51 at a most part in plate thickness: furthermore, the punch 63 may be pushed back from that state.

[0039] <Copper Plate Bonding Step>

[0040] The copper plate 12 among the metal plates 50 which are made by the metal plate forming step is stacked on one surface of the ceramic substrate 11 with active-metal brazing material made of paste or a foil therebetween. At this time, the surface at the side in which the burrs 56 are generated in the metal plate forming step is stacked onto the surface of the ceramic substrate 11. FIG. 3 schematically shows a previously described state in which the metal plate 50 is stacked on the ceramic substrate 11. The metal plate 50 is stacked so as to stack the surface in which the burrs 56 are generated onto a brazing material layer 59 of the ceramic substrate 11, so that a stacked body 40 of the ceramic substrate 11, the brazing material layer 59 and the copper plate 12 is formed.

[0041] Then, the stacked bodies 40 are stacked respectively between cushion sheets 30 which are carbon graphite plate or the like, and pressed in a stacking direction with 0.05 MPa to 1.0 MPa for example, by a pressing tool 110 as shown in FIG. 4.

[0042] The pressing tool 110 is provided with a base plate 111, guide posts 112 which are vertically fixed at four corners of an upper surface of the base plate 111, a fix plate 113 which is fixed at top ends of the guide posts 112, a press plate 114 which is held by the guide posts 112 movably up and down between the base plate 111 and the fix plate 113, and a biasing means 115 such as a spring or the like, which is provided between the fix plate 113 and the press plate 114 so as to bias the press plate 114 downward. In this pressing tool 110, the above-mentioned stacked bodies 40 are arranged between the base plate 111 and the press plate 114.

[0043] In a state in which the stacked bodies 40 are pressed in the pressing tool 110, the pressing tool 110 is arranged in a heating furnace (not illustrated) and heated in vacuum atmosphere at temperature 800° C. or higher and 930° C. or lower for 1 minute to 60 minutes so as to braze the ceramic substrate 11 and the copper plate 12.

[0044] Braze between the ceramic substrate 11 and the copper plate 12 uses the active-metal brazing material. Ti that is active metal in the brazing material is dispersed early into the ceramic substrate 11 and makes TiN; and the copper plate 12 and the ceramic substrate 11 are bonded with Ag—Cu alloy.

[0045] <Aluminum Plate Bonding Step>

[0046] After bonding the copper plate 12 on the ceramic substrate 11, a counter surface to the surface on which the copper plate is bonded is cleaned by pickling or the like if necessary: then the aluminum plate 13 made by the aforementioned metal plate forming step is stacked on the counter surface to the copper plate with brazing material therebetween. Stacked bodies of the ceramic plate 11 on which the copper plate 12 is bonded, the brazing material and the aluminum plate 13 are stacked respectively between the cushion sheets 30; and pressed in the stacking direction at 0.3 MPa to 1.0 MPa for example by the pressing tool 110. Also at this time, the aluminum plate 13 (the metal plate 50) is stacked on the ceramic substrate 11 so that the surface at the side at which the burrs 56 are generated is in contact with the ceramic substrate 11.

[0047] In this state in which the stacked bodies are pressed in the pressing tool 110, the pressing tool 110 is arranged in the heating furnace (not illustrated) and heated in vacuum atmosphere at temperature 630° C. or higher and 650° C. or lower for 1 minute to 60 minutes so as to braze the ceramic substrate 11 and the aluminum plate 13.

[0048] In the power-module substrate 10 manufactured as above, the copper plate 12 and the aluminum plate 13 are bonded so that the surfaces at which the burrs 56 are generated are in contact with the ceramic substrate 11; in the respective bonding steps, the burrs 56 are strongly pressed and the brazing material which is the bonding material is prevented by the burrs 56 from exuding from bonding boundary to an outside when melted. Although a part of melted braze is exuded to the outside, since the fracture surfaces 58 of the copper plate 12 and the aluminum plate 13 by cut from the metal raw-plates 51 are in contact with the surfaces of the ceramic substrate 11 respectively, the melted braze is prevented from crawling up on the fracture surfaces 58. Accordingly, it is possible to prevent the braze stain on the surfaces of the counter side to the bonding surfaces of copper plate 12 and the aluminum plate 13.

[0049] Therefore, since the braze stain is suppressed particularly on the surface of the copper plate 12 to be a circuit layer, it is possible to improve the solder bondability of the semiconductor chip 14 mounted on the copper plate 12. In addition, the height of the burrs 56 is kept at 0.021 mm or smaller, so that the bondability of the ceramic substrate 11 to the copper plate 12 and the aluminum plate 13 is not deteriorated.

EXAMPLES

[0050] Next, a confirmation test performed for confirming effects of the present invention will be explained.

[0051] Used as a ceramic substrate was an aluminum nitride plate with a rectangle shape of 30 mm×30 mm and a thickness 0.635 mm. A copper plate with a rectangle shape of 27 mm×27 mm and a thickness 0.3 mm was used as a metal plate (a copper plate) blanked by a press working on the metal raw-plate (an oxygen-free copper plate). As for the copper plate, as shown in Table 1, test pieces were made by push-back blanking in which the plate was half blanked and then pushed back; and test pieces were made by blanking in which the plate was blanked in one press working without pushing back. Half push-back amounts of the push back (push amounts of the punch to the metal raw-plate) in the respective Examples and Comparative Examples are shown in Table 1.

[0052] Regarding the blanked copper plate, observing configurations at side surfaces and measuring a minimum thickness of fracture surfaces by a laser microscope, average values were calculated from five test pieces with regard to Examples and Comparative Examples. Observing a surface of the copper plate, measuring a maximum height of burrs by the laser microscope, so that average values were calculated from five test pieces respectively.

[0053] A brazing material layer of Ag-8.8 mass % Ti was formed on a surface of the aluminum nitride plate. The brazing material was formed so that whole circumference thereof was 0.2 mm larger than the copper plate. The copper plate was stacked on the aluminum nitride plate so that the side in which the burrs were generated was in contact with the brazing material layer on the aluminum nitride plate; and these members were held for 30 minutes at 830° C. while pressing with pressure of 1 kgf/cm.sup.2 (about 0.1 MPa).

[0054] Here, the braze stain is generated by solidified Ag—Cu melted liquid phase crawling from a bonding boundary along the side surface to the surface of the copper plate, and cannot be measured as unevenness of the surface because a thickness thereof is smaller than 5 μm. Accordingly, the braze stain was regarded if a stain was recognized by the naked eye to have a width thereof from a periphery of the copper plate was 1 mm or larger. If an incidence of the braze stain was 0%, it was evaluated as “good”: or it was evaluated as “not good” if even a little braze stain was recognized.

[0055] Regarding bondability between the copper plate and the ceramic plate, an area of void (vacancy) at the bonding boundary was measured by observing the bonding boundary between the copper plate and the ceramic plate by an ultrasonic image measuring device: and a void rate was calculated as a total area of the void with regards to an area to be bonded (an area of the copper plate). If the void rate was smaller than 2% it was evaluated as “good”: or it was evaluated as “not good” if the void rate exceeds 2%.

[0056] These results are shown in Table 1.

TABLE-US-00001 TABLE 1 Half Thickness of Maximum Press Push-back Fracture Height of Braze Method Amaount Surface Burrs Stain Bondavility Example 1 Push 0.22 mm 0.068 mm 0.011 mm Good Good Back Example 2 Push 0.20 mm 0.089 mm 0.013 mm Good Good Back Example 3 Push 0.18 mm 0.110 mm 0.021 mm Good Good Back Comparative Single — 0.118 mm 0.051 mm Good Not Good Example 1 Stroke Comparative Push 0.24 mm 0.047 mm 0.009 mm Not Good Good Example 2 Back

[0057] It is clear from Table 1 that the bondability was good when the height of the burrs of the copper plate was 0.021 mm or larger; and the braze stain was prevented when the thickness of the fracture surface was 0.068 mm or larger.

[0058] The present invention is not limited to the above-described embodiments and various modifications may be made without departing from the scope of the present invention.

[0059] In the above embodiment, the circuit layer was the copper plate and the heat-radiation layer was the aluminum plate: however, it is not limited to this combination. Both the circuit layer and the heat-radiation layer can be the same kind of metal plates, e.g., aluminum plates. In this case, it is possible to bond the metal plates on both surfaces of the ceramic substrate by single bonding step.

INDUSTRIAL APPLICABILITY

[0060] Without deteriorating the bondability between the metal plate and the ceramic substrate, the braze stain is prevented and the solder bondability of the semiconductor chip is improved.

REFERENCE SYMBOLS

[0061] 10 power-module substrate [0062] 11 ceramic substrate [0063] 12 copper plate (metal plate) [0064] 13 aluminum plate (metal plate) [0065] 14 semiconductor chip [0066] 15 heat sink [0067] 40 stacked body [0068] 30 cushion sheet [0069] 50 50 [0070] 51 metal raw-plate [0071] 52 blank hole [0072] 55 drooped part [0073] 56 burr [0074] 57 shear plane [0075] 58 fracture surface [0076] 59 brazing material layer [0077] 61 forming hole [0078] 62 die [0079] 63 punch [0080] 64 push-back tool [0081] 65 plate presser [0082] 110 pressing tool [0083] 111 base plate [0084] 112 guide post [0085] 113 fix plate [0086] 114 press plate [0087] 115 biasing means