A transaction card includes a card body that may comprise a card body comprising a ceramic material, the card body including a primary surface and a first mating surface. A card backer comprises a metallic material and includes a secondary surface and a second mating surface. A portion of the first mating surface and a portion of the second mating surface are coupled together.

A structure body according to an embodiment of the present disclosure includes: a first base having one surface, and having a density lower than a density that is determined by a crystal structure and a composition of a constituent material; a second base disposed to face the one surface of the first base; and a buffer layer provided between the first base and the second base, and containing at least a metal element.

A method for manufacturing a bonded body according to the present disclosure includes: obtaining a first composite that includes a first outer layer portion located on an outer surface side and containing silicon oxide as a main component, and a first inner portion surrounded by the first outer layer portion and containing silicon carbide and silicon; obtaining a second composite that includes a second outer layer portion located on an outer surface side and containing silicon oxide as a main component, and a second inner portion surrounded by the second outer layer portion and containing silicon carbide and silicon; grinding or polishing a first contact surface at which the first inner portion is in contact with the second inner portion and/or a second contact surface at which the second inner portion is in contact with the first inner portion; and bringing the first contact surface and the second contact surface into contact with each other and performing thermal treatment in a vacuum atmosphere or an inert gas atmosphere.

The present disclosure belongs to the technical field of three-dimensional packaging, and in particular relates to a bonding method for a copper-copper metal. The bonding method includes: subjecting a copper-plated surface of a clean copper-plated substrate to pretreatment with hydrazine hydrate under a protective atmosphere, to obtain a copper-plated substrate to be bonded, where the copper-plated surface is kept at 50? C. to 90? C.; and subjecting a plurality of the copper-plated substrates to be bonded to pressurized bonding at 200? ? C. to 300? ? C. under the protective atmosphere.

A method for joining materials, includes: providing a first material and a second material, providing the first material with a grid structure at a joining point, and joining, in particular soldering, the second material to the grid structure such that a material composite of the first material and the second material is produced, wherein the grid structure is designed in such a way that stresses in the material composite are at least partly compensated by the grid structure.

A ceramic circuit substrate according to the present invention includes a ceramic substrate, a copper circuit made of a copper-based material bonded, via a bonding layer, to a surface of the ceramic, and a copper heat sink made of the copper-based material bonded, via a bonding layer, to the other surface of the ceramic. The bonding layers each include a brazing material component including two or more kinds of metals, such as Ag, and an active metal having a predetermined concentration. The bonding layers each include a brazing material layer including the brazing material component, and an active metal compound layer containing the active metal. A ratio of a bonding area of the active metal compound layer in a bonding area of each of the bonding layers is 88% or more.

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<.sub.1/.sub.2<0.9 and relational expression (2) 0.7<.sub.3/.sub.4<0.9 holds, where .sub.1 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30 C. to 300 C. and .sub.2 represents a linear expansion coefficient of the compound semiconductor substrate at 30 C. to 300 C., and .sub.3 represents a linear expansion coefficient of the polycrystalline ceramic substrate at 30 C. to 1000 C. and .sub.4 represents a linear expansion coefficient of the compound semiconductor substrate at 30 C. to 1000 C.

Described herein are methods for improved transfer of graphene from formation substrates to target substrates. In particular, the methods described herein are useful in the transfer of high-quality chemical vapor deposition-grown monolayers of graphene from metal, e.g., copper, formation substrates via non-polymeric methods. The improved processes provide graphene materials with less defects in the structure.

A transaction card includes a card body that may comprise a card body comprising a ceramic material, the card body including a primary surface and a first mating surface. A card backer comprises a metallic material and includes a secondary surface and a second mating surface. A portion of the first mating surface and a portion of the second mating surface are coupled together.

A ceramic matrix composite component includes a first substrate and a second substrate each formed of a silicide-containing ceramic matrix composite, silicon carbide layers respectively coating a bonding surface of the first substrate and a bonding surface of the second substrate, and a bonding layer formed of a silicon-containing alloy and provided between the silicon carbide layer coating the bonding surface of the first substrate and the silicon carbide layer coating the bonding surface of the second substrate.