A metal-ceramic substrate (1) comprising an insulating layer (11) comprising a ceramic and having a first thickness (D1), and a metallization layer (12) bonded to the insulation layer (11) and having a second thickness (D2),
wherein the first thickness (D1) is less than 250 μm and the second thickness (D2) is greater than 200 μm and wherein the first thickness (D1) and the second thickness (D2) are dimensioned such that a ratio of an amount of the difference between a thermal expansion coefficient of the metallization layer (12) and a thermal expansion coefficient of the metal-ceramic substrate (1) to a thermal expansion coefficient of the metal-ceramic substrate (1)
has a value less than 0.25, preferably less than 0.2 and more preferably less than 0.15 or even less than 0.1.

A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of a silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of a bonded interface between the copper member and the ceramic member, a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, and a magnesium nitride phase is present on a magnesium oxide layer side of the Mg solid solution layer.

A method of manufacturing an electrostatic chuck includes: preparing a first ceramic plate having a first hole formed therein; preparing a second ceramic plate having a second hole formed at a position different from a position of the first hole in a horizontal direction; forming a first slurry layer on the first ceramic plate or the second ceramic plate with a first slurry, the first slurry layer having a flow path formed therein to connect the first hole and the second hole; stacking the first ceramic plate and the second ceramic plate one above the other via the first slurry layer, and bonding the first ceramic plate and the second ceramic plate stacked one above the other via the first slurry layer.

An example article may include a component, a substrate including a first ceramic, a joining layer between the component and the substrate, and a joint surface coating between the substrate and the joining layer. The joint surface coating may include a diffusion barrier layer including a second ceramic material, and a compliance layer including at least one of a metal or a metalloid. An example technique may include holding a first joining surface of a coated component adjacent a second joining surface of a second component. The example technique may further include heating at least one of the coated component, the second component, and a braze material, and brazing the coated component by allowing the braze material to flow in a region between the first joining surface and the second joining surface.

In a copper-ceramic bonded body of the present invention, at a bonding interface of a copper member and a ceramic member, there are formed a nitride compound layer containing one or more nitride forming elements selected from Ti, Nb, Hf, and Zr, and an Ag—Cu eutectic layer, in order from the ceramic member side, the thickness of the nitride compound layer is 0.15 μm or more and 1.0 μm or less, an intermetallic compound phase formed of an intermetallic compound that contains the nitride forming element and Si is present between the copper member and the ceramic member, and Cu and Si are present at the grain boundary of the nitride compound layer.

Cutting elements include a diamond-bonded body attached with a substrate. The substrate has a coercivity of greater than about 200 Oe, and has a magnetic saturation of from about 73 to 90. The diamond-bonded body has a compressive stress at the surface of greater than about 0.9 GPa after heat treatment, and greater than about 1.2 GPa prior to heat treatment.

A method is provided for producing an insulating circuit substrate with a heat sink including an insulating circuit substrate and a heat sink, the insulating circuit substrate including a circuit layer and a metal layer that are formed on an insulating layer, and the heat sink being bonded to the metal layer side. The method includes: an aluminum bonding layer forming step of forming an aluminum bonding layer formed of aluminum or an aluminum alloy having a solidus temperature of 650° C. or lower on the metal layer; and a heat sink bonding step of laminating a copper bonding material formed of copper or a copper alloy between the aluminum bonding layer and the heat sink and bonding the aluminum bonding layer, the copper bonding material, and the heat sink to each other by solid phase diffusion bonding.

A bonded body is formed to configured to join a ceramic member formed of a Si-based ceramic and a copper member formed of copper or a copper alloy, in which, in a joint layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on the ceramic member side.

A crucible includes an outer element and an inner element. The outer element includes a first portion that is horizontal at a bottom end of the crucible and a second portion that ascends radially outwardly from the bottom end of the crucible to a top end of the crucible at a first acute angle to a vertical axis. The inner element includes a conus with a cylinder at a base of the conus. The conus descends radially outwardly from the top end of the crucible to the bottom end of the crucible at a second acute angle to the vertical axis. The inner element includes a base portion of the cylinder attached to the first portion of the outer element using a sealant to form a hollow mold between an inner portion of the outer element and an outer portion of the inner element.

A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonding layer formed between the ceramic member and the Cu member, an area ratio of a Cu.sub.3P phase in a region extending by up to 50 m toward the Cu member side from a bonding surface of the ceramic member is equal to or lower than 15%.