A wiring board includes an insulating substrate and a wiring conductor. The insulating substrate includes a first layer having an upper surface and a lower surface and having a first content of aluminum oxide and containing mullite and a second layer stacked on the upper surface and/or the lower surface of the first layer and having a second content of aluminum oxide greater than the first content. The wiring conductor is located inside the first layer and contains a manganese compound and/or a molybdenum compound. A manganese silicate phase and/or a magnesium silicate phase in an interface area between the insulating substrate and the wiring conductor.

In some examples, techniques of repairing and/or reinforcing oxide-oxide ceramic matrix composite (CMC) materials using a metallic material. In one example, a method including applying a metallic material at an edge of an oxide-oxide CMC substrate; and heating the metallic material to diffuse the metal material into the oxide-oxide CMC substrate at the edge. In another example, a method including applying a metallic material onto a damaged area of the oxide-oxide CMC; applying a reinforcing phase material onto the damaged area of the oxide-oxide CMC; and heating the metallic material to diffuse the metallic material into the oxide-oxide CMC and attach the reinforcing phase material to the damaged area of the oxide-oxide CMC.

A holding device including a ceramic member formed of a sintered ceramic material containing aluminum nitride as a main component, a heating resistor element formed of a metal and disposed in the ceramic member, an electrically conductive electricity supply connection member in contact with the heating resistor element, and an electrically conductive electricity supply terminal electrically connected to the electricity supply connection member. The holding device holds an object on the surface of the ceramic member. In the holding device, at least a portion of the surface of the electricity supply connection member, excluding its contact surface for contact with the heating resistor element and its connection surface for connection with the electricity supply terminal, is covered with a coat layer formed of a nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb. Also disclosed is a method of manufacturing the holding device.

An aluminum nitride sintered body for use in a semiconductor manufacturing apparatus is provided. The aluminum nitride sintered body exhibits, in a photoluminescence spectrum thereof in a wavelength range of 350 nm to 700 nm obtained with 250 nm excitation light, a highest emission intensity peak within a wavelength range of 580 nm to 620 nm.

A holding device including a ceramic member formed of a sintered ceramic material containing aluminum nitride as a main component, a heating resistor element formed of a metal and disposed in the ceramic member, and an electrically conductive electricity supply member in contact with the heating resistor element. The holding device holds an object on the surface of the ceramic member. In the holding device, at least a portion of the surface of the heating resistor element, excluding its contact surface for contact with the electricity supply member, is covered with a coat layer formed of a nitride containing at least one of Al, Ti, Zr, V, Ta, and Nb. Also disclosed is a method of manufacturing the holding device.

The present invention provides a ceramic metal circuit board including a ceramic substrate and metal plates bonded to both surfaces of the ceramic substrate through respective bonding layers, wherein a metal film is provided on a surface of one metal plate bonded to one surface of the ceramic substrate; and at least a part of another metal plate bonded to another surface of the ceramic substrate is not provided with the metal film. Preferably, a protruding portion is formed as a portion of the bonding layer so as to protrude from a side surface of each of the metal plates. According to the above-described configuration, it is possible to provide a ceramic circuit board which is easy to use according to the parts to be bonded and is excellent in heat-cycle resistance characteristics.

An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes an upper surface, a lower surface bonded to the ceramic substrate, and a side surface connecting the upper surface with the lower surface wherein, a tip of the upper surface recedes in the normal direction of the conductor layer from a tip of the lower surface, the side surface has a contour having an inwardly recessed curve line and having a portion receding in the normal direction of the conductor layer from the tip of the upper surface, and a connection portion between the upper surface and the side surface has a rounded shape such that a maximum radius R of a circle is 0.1 mR5 m on average.

A thermoelectric conversion element includes an element body formed of a thermoelectric conversion material of a silicide-based compound, and electrodes each formed on one surface of the element body and the other surface opposite the one surface. The electrodes are formed of a sintered body of a copper silicide, and the electrodes and the element body are directly joined.

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.

A method for producing a metal-ceramic substrate includes attaching a metal layer to a surface side of a ceramic layer, the metal layer being structured into a plurality of metallization regions respectively separated from one another by at least one trench-shaped intermediate space to form conductive paths and/or connective surfaces and/or contact surfaces. The method further includes filling the at least one trench-shaped intermediate space with an electrically insulating filler material, and covering first edges of the metallization regions facing and adjoining the surface side of the ceramic layer in the at least one trench-shaped intermediate space, as well as at least one second edge of the metallization regions facing away from the surface side of the ceramic layer in the at least one trench-shaped intermediate space, by the electrically insulating filler material.