Processes for preparing latanoprostene bunod and an intermediate prepared from the process. Also latanoprostene bunod compositions having high-purity latanoprostene bunod.

Siloxanes are prepared by reacting: a compound A with a compound B or a compound A with a compound C or a compound B with a compound C or a compound C alone,
in the presence of a compound D at ≥40° C., wherein compound A is a silane or a siloxane having at least one silicon-bonded hydrogen atom, compound B is a silane or a siloxane having at least one silicon-bonded alkoxy moiety, compound C is a silane or a siloxane having at least one silicon-bonded hydrogen atom and at least one silicon-bonded alkoxy moiety, and compound D is a cationic Si(II) compound.

A substrate with a superhydrophobic coating, wherein the superhydrophobic coating includes a binding layer disposed on the substrate, and a hydrophobic layer disposed on the binding layer, wherein the hydrophobic layer includes perfluoroalkyl-functionalized silica nanoparticles, and a method of fabricating the substrate with the superhydrophobic coating. Various combinations of embodiments of the substrate with the superhydrophobic coating and the method of fabricating thereof are provided.

A solid electrolyte represented by general formula Li.sub.ySiR.sub.x(MO.sub.4), where x is an integer from 1 to 3 inclusive, y=4−x, each R present is independently C1-C3 alkyl or C1-C3 alkoxy, and M is sulfur, selenium, or tellurium. Methods of making the solid electrolyte include combining a phenylsilane and a first acid to yield mixture including benzene and a second acid, and combining at least one of an alkali halide, and alkali amide, and an alkali alkoxide with the second acid to yield a product d represented by general formula Li.sub.ySiR.sub.x(MO.sub.4).sub.y. The second acid may be in the form of a liquid or a solid. The phenylsilane includes at least one C1-C3 alkyl substituent or at least one C1-C3 alkoxy substituent, and the first acid includes at least one of sulfuric acid, selenic acid, and telluric acid.

Example implementations relate to fluid feed holes. For example, a method of forming a fluid feed hole can include forming a via of a threshold size in a plurality of thin films of a fluid ejection die by removing a portion of the plurality of thin films, forming a fluid-attack-resistant material on the plurality of thin films and in the via, planarizing the fluid-attack-resistant material using chemical mechanical planarization (CMP), and forming the fluid feed hole by removing a portion of the planarized fluid-attack-resistant material in the via.

A phenalene-1-one compound, a photosensitizer composition including the phenalene-1-one compound, an article including the phenalene-1-one compound and/or photosensitizer composition and the use thereof.

Processes for preparing latanoprostene bunod and an intermediate prepared from the process. Also latanoprostene bunod compositions having high-purity latanoprostene bunod.

Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formulae A and B:

##STR00001##

wherein R, R.sup.1, and R.sup.2-8 are as defined herein.

A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.