The present invention relates to a novel metal precursor having improved thermal stability and volatility and can provide: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.

A composition contains a compound represented by the following formula:

##STR00001##

where M represents either of Si and Sn, R.sub.1 to R.sub.8 each independently represent an alkyl group containing three or less carbon atoms, and R.sub.9 to R.sub.14 each independently represent an alkyl group.

A conductive liquid composition includes: for a binder resin, 5 to 25 mass % of hydroxyl-containing resin with hydroxyl value 3 to 100 and weight-average molecular weight 4000 to 20000, for a solvent, at least one solvent with a boiling point 170 C., 70 mass % of the total solvent, for a curing agent, 1.5 to 10.0 mass % of polyisocyanate, (D) for a curing accelerator, 0.005 to 0.1 mass % of an organometallic compound, (E) for an adhesion reinforcing agent, 0.2 to 2.5 mass % of coupling agent, (F) for conducting materials: (f1) 2.0 to 10.0 mass % of graphite, (f2) 5.0 to 15.0 mass % of conductive carbon black, and (f3) 20.0 to 50.0 mass % of silica particles with a mean particle size 1.0 to 7.0 m and surface-coated with silver, and (G) a surface resistivity 1 to 1000 /sq. when the thickness of the cured film of the conductive liquid composition is 8 m.

The present invention is a compound for forming a metal-containing film, represented by the following general formula (M), where T's each represent a unit represented by the following general formula (1); Q represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted arylalkyl group having 7 to 31 carbon atoms, or a combination of these groups; and R.sup.A represents an organic group whose protecting group is to be removed by an action of an acid, heat, or both to generate one or more hydroxy groups or carboxyl groups. This provides a compound for forming a metal-containing film that can provide a composition for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties.

##STR00001##

A conductive liquid composition includes: for a binder resin, 5 to 25 mass % of hydroxyl-containing resin with hydroxyl value 3 to 100 and weight-average molecular weight 4000 to 20000, for a solvent, at least one solvent with a boiling point 170 C., 70 mass % of the total solvent, for a curing agent, 1.5 to 10.0 mass % of polyisocyanate, (D) for a curing accelerator, 0.005 to 0.1 mass % of organometallic compound, (E) for an adhesion reinforcing agent, 0.2 to 2.5 mass % of coupling agent, (F) for conducting materials: (f1) 2.0 to 10.0 mass % of graphite, (f2) 5.0 to 15.0 mass % of conductive carbon black, and (f3) 20.0 to 50.0 mass % of silica particles with a mean particle size 1.0 to 7.0 m and surface-coated with silver, and (G) a surface resistivity 1 to 1000 /sq. when the thickness of the cured film of the conductive liquid composition is 8 m.

Methods are described for determining the quality of dioctyltin bisoctylmaleate and selectively screening its use as a component or modifying agent in a polymer production process. The quality of dioctyltin bisoctylmaleate is determined by measuring the presence and intensity of by products or impurities contained in the dioctyltin bisoctylmaleate. The detected impurities are resolved by comparison to a baseline, such as a solubility limit, to make a decision if the dioctyltin bisoctylmaleate supply is within acceptable limits. Selectively using certain supplies of dioctyltin bisoctylmaleate having suitable limits of impurities, such as the solubility limit of dioctyltin maleate, polymer production efficiency, time and costs can be improved.

The present invention relates to novel precursors in the form of metal complexes with 2-substituted 1,3-diketones and to a process for the preparation thereof. The invention furthermore relates to the use thereof for the production of thin metal-oxide layers. The latter are constituents in a very wide variety of electronic components and devices having various functions.

The present disclosure is related to organotin cluster photoresists and stabilization methods, particularly for extreme ultraviolet radiation (EUV) photolithography. The organotin cluster photoresists comprise one or more represented by chemical formulas [RR.sup.1Sn].sub.3E.sub.3, and [RSn].sub.4E.sub.6. The stabilization methods include the application of organic molecules as additives to stabilize organotin cluster photoresists.

Disclosed are a semiconductor photoresist composition including an organotin compound represented by Chemical Formula 1, and a solvent, a method of forming patterns using the same.

Organotin clusters are described with the formula R.sub.3Sn.sub.3(O.sub.2CR).sub.5x(OH).sub.2+x(.sub.3-O) with 0x<2; R=branched or cycloalkyl with 1 to 31 carbon atoms; RH or alkyl with 1 to 20 carbon atoms. Three carboxylato ligands are bridging, and two OH ligands are bridging. The remaining two carboxylato ligands are in non-bridging configurations, and the non-bridging carboxylato ligands are exchangeable in solution. Solutions of these clusters are suitable for forming radiation sensitive coatings that can be used to pattern nanometer scale structures. The radiation sensitive coatings are particularly suitable for EUV patterning.