Patent classifications
C07F7/2224
Metal precursor for making metal oxide
A novel metal precursor having improved thermal stability and volatility is provided. Also provided herein are: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.
MONOALKYL TIN COMPOUNDS WITH LOW POLYALKYL CONTAMINATION, THEIR COMPOSITIONS AND METHODS
A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR).sub.3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR.sub.2).sub.3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn(NRCOR).sub.3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R and R are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.
SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same.
##STR00001##
When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via SnOSn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.
POLYCYCLIC AROMATIC COMPOUND
By providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are linked via a boron atom, a nitrogen atom, or the like, options of a material for an organic EL element are increased. In addition, by using the novel polycyclic aromatic compound as a material for an organic electroluminescent element, an excellent organic EL element is provided.
Polycyclic aromatic compound
By providing a novel polycyclic aromatic compound in which a plurality of aromatic rings are linked via a boron atom, a nitrogen atom, or the like, options of a material for an organic EL element are increased. In addition, by using the novel polycyclic aromatic compound as a material for an organic electroluminescent element, an excellent organic EL element is provided.
SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION
This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition:
##STR00001##
wherein, in Chemical Formula 1, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from OR.sup.a and OC(O)R.sup.b.
COMPOSITIONS FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND RELATED METHODS
Mono-substituted tin silanolate compounds and related methods are provided. A method comprises contacting a mono-substituted tin (IV) compound with a silanolate reactant to form a mono-substituted tin silanolate compound. A composition comprises a mono-substituted tin silanolate compound.
HIGH PURITY TIN COMPOUNDS CONTAINING UNSATURATED SUBSTITUENT AND METHOD FOR PREPARATION THEREOF
Monoorgano tin trialkoxide compounds having chemical formula RSn(OR).sub.3 and containing less than about 5 mol % diorgano tin dialkoxide are described. R is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.
HIGH PURITY TIN COMPOUNDS CONTAINING UNSATURATED SUBSTITUENT AND METHOD FOR PREPARATION THEREOF
Monoorgano tin trialkoxide compounds having chemical formula RSn(OR).sub.3 and containing less than about 5 mol % diorgano tin dialkoxide are described. R is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.
Alternating copolymer chain scission photoresists
Alternating copolymers having hydrocarbon-substituted terminal units and repeat units each containing two different monomer units with extreme ultraviolet (EUV)-absorbing elements are disclosed. Alternating copolymers having organic terminal units and repeat units each containing a monomer unit with an EUV-absorbing element and an organic monomer unit are also disclosed. A process of forming a polymer resist, which includes providing an alternating copolymer having repeat units with at least one EUV-absorbing monomer unit and replacing end groups of the alternating copolymer with unreactive terminal units, is disclosed as well.