Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

The present disclosure is related to organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds as extreme ultraviolet (EUV) photoresist. Organometallic half-sandwich (η.sup.5-cyclopentadienyl)tin hydroxide oxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5)SnO(OH) and (η.sup.5-cyclopentadienyl)tin tri(hydroxide) represented by the chemical formula (η.sup.5-C.sub.5R.sub.5)Sn(OH).sub.3 are described including the methods for preparation and purification, wherein R is H, alkyl, alkenyl, alkynyl, cycloalkyl group with 1 to 20 carbon atoms, and aryl group with 6-20 carbon atoms. η.sup.5-cyclopentadienyl comprises η.sup.5-C.sub.5H.sub.5, and/or substituted η.sup.5-cyclopentadienyl η.sup.5-C.sub.5H.sub.4R, η.sup.5-C.sub.5H.sub.3R.sub.2, η.sup.5-C.sub.5H.sub.2R.sub.3, η.sup.5-C.sub.5HR.sub.4, and η.sup.5-C.sub.5R.sub.5. The solution compositions of organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds are suitable for EUV photoresists, and/or as the precursors of EUV photoresists for radiation sensitive coating and forming nanoscale patterns through photolithography.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

The present disclosure is related to organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds as extreme ultraviolet (EUV) photoresist. Organometallic sandwich bis(cyclopentadienyl)tin oxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5).sub.2SnO, di(cyclopentadienyl)tin dialkoxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5).sub.2Sn(OR.sup.1)(OR.sup.2), and half-sandwich (cyclopentadienyl)tin triamide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5)Sn(NR.sup.1.sub.2)(NR.sup.2.sub.2)(NR.sup.3.sub.2) are described including the methods for preparation and purification, wherein R.sup.1, R.sup.2, R.sup.3 are independently H, alkyl (linear or branched), alkenyl, alkynyl and cycloalkyl group with 1 to 20 carbon atoms, and aryl group with 6-20 carbon atoms. Sandwich and half-sandwich comprise cyclopentadienyl (C.sub.5H.sub.5), or substituted cyclopentadienyl (η.sup.5-C.sub.5H.sub.4R, η.sup.5-C.sub.5H.sub.3R.sub.2, η.sup.5-C.sub.5H.sub.2R.sub.3, η.sup.5-C.sub.5HR.sub.4, and η.sup.5-C.sub.5R.sub.5), R is H, alkyl, alkenyl, alkynyl, cycloalkyl group with 1 to 20 carbon atoms and aryl group with 6-20 carbon atoms. The solution compositions of organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds are suitable for EUV photoresists, and/or the precursors of EUV photoresists for radiation sensitive coating and forming nanoscale patterns through photolithography.

The present disclosure is related to organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds as extreme ultraviolet (EUV) photoresist. Organometallic sandwich di(cyclopentadienyl)tin dialkoxide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5).sub.2Sn(OR.sup.1)(OR.sup.2), or half-sandwich (cyclopentadienyl)tin triamide represented by the chemical formula (η.sup.5-C.sub.5R.sub.5)Sn(NR.sup.1.sub.2)(NR.sup.2.sub.2)(NR.sup.3.sub.2) are described including the methods for preparation and purification, wherein R.sup.1, R.sup.2, R.sup.3 are independently H, linear or branched alkyl, alkenyl, alkynyl, or cycloalkyl group with 1 to 20 carbon atoms, or aryl group with 6-20 carbon atoms. Sandwich and half-sandwich groups comprise cyclopentadienyl (C.sub.5H.sub.5), or substituted cyclopentadienyl (η.sup.5-C.sub.5H.sub.4R, η.sup.5-C.sub.5H.sub.3R.sub.2, η.sup.5-C.sub.5H.sub.2R.sub.3, η.sup.5-C.sub.5HR.sub.4, or η.sup.5-C.sub.5R.sub.5). The solution compositions of organometallic sandwich and half-sandwich tin (bearing η.sup.5-C.sub.5—Sn π bond) compounds are suitable for EUV photoresists, and/or the precursors of EUV photoresists for radiation sensitive coating and forming nanoscale patterns through photolithography.

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X].sub.3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which R.sup.f is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2:
(R.sup.fCH.sub.2).sub.nSnX.sub.(4-n)  (I).