The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed halide perovskite of the formula (I) [A][B][X].sub.3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR′).sub.3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR′.sub.2).sub.3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R′ is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn—(NR′COR″).sub.3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R′ and R″ are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.

Disclosed herein are methods of purifying compounds useful for the deposition of high purity tin oxide and high purity compounds purified by those methods. Such compounds are those of the Formula as follows R.sub.xSn-A.sub.4-x

wherein: A is selected from the group consisting of (Y.sub.aR.sub.z) and a 3- to 7-membered N-containing heterocyclic group; each R group is independently selected from the group consisting of an alkyl or aryl group having from 1 to 10 carbon atoms; each R group is independently selected from the group consisting of an alkyl, acyl or aryl group having from 1 to 10 carbon atoms; x is an integer from 0 to 4; a is an integer from 0 to 1; Y is selected from the group consisting of N, O, S, and P; and
z is 1 when Y is O, S or when Y is absent and z is 2 when Y is N or P.

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR).sub.3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR.sub.2).sub.3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn(NRCOR).sub.3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R and R are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.

The present disclosure includes the preparation of mixed-ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for extreme ultraviolet (EUV) lithography. The compounds of the present disclosure can also be used as plasma chemical vapor deposition (CVD) precursors for EUV lithography.

A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): ##STR00001## wherein R.sup.1, R.sup.2, Q.sup.1, Q.sup.2, Q.sup.3, and Q.sup.4 are each independently a C1 to C4 linear or branched alkyl group.

A pure composition comprises a monoalkyltin trialkoxide compound represented by the chemical formula RSn(OR).sub.3 or a monoalkyl tin triamide compound represented by the chemical formula RSn(NR.sub.2).sub.3 and no more than 4 mole % dialkyltin compounds relative to the total tin amount, where R is a hydrocarbyl group with 1-31 carbon atoms, and wherein R is a hydrocarbyl group with 1-10 carbon atoms. Methods are described for the formation of the pure compositions. A solid composition comprises a monoalkyl triamido tin compound represented by the chemical formula RSn(NRCOR).sub.3, where R is a hydrocarbyl group with 1-31 carbon atoms, and where R and R are independently a hydrocarbyl group with 1-10 carbon atoms. The compositions are suitable for the formation of resist compositions suitable for EUV patterning in which the compositions have a high EUV absorption.

Disclosed are an electrolyte membrane with excellent durability resulting from the inclusion of a metal-organic framework (MOF), and a membrane-electrode assembly including the same. The electrolyte membrane may include an ionomer; and metal-organic frameworks (MOFs) in which a first metal ion and an organic ligand are coordinated.

Large scale (bulk) compositions comprising high-purity stannsoporfin are disclosed, as well as methods of synthesizing such compositions.

A tin compound, a tin precursor compound for forming a tin-containing layer, and a method of forming a thin layer, the tin compound being represented by Formula 1:

##STR00001## wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 are each independently hydrogen, a linear alkyl group having 1 to 4 carbon atoms, or a branched alkyl group having 3 or 4 carbon atoms.