The present invention relates to a novel photoacid generator compound cation, comprising an element having for 92 eV photons (extreme ultraviolet (EUV)) an absorption cross section of at least 0.5×10.sup.7.Math.cm.sup.2/mol; having at least two stable oxidation states; and selected from the elements of group 1 to group 15 of the periodic table of the elements. Additionally, the present invention relates to a photoacid generator comprising said photoacid generator compound cation and an anion. Furthermore, the present invention aims to provide a photoresist composition comprising said photoacid generator and an acid labile polymer. Finally, the present invention relates to a method of generating an acid using the photoresist composition and a method of forming a patterned materials feature on a substrate.

The present invention relates to a novel photoacid generator compound cation, comprising an element having for 92 eV photons (extreme ultraviolet (EUV)) an absorption cross section of at least 0.5×10.sup.7.Math.cm.sup.2/mol; having at least two stable oxidation states; and selected from the elements of group 1 to group 15 of the periodic table of the elements. Additionally, the present invention relates to a photoacid generator comprising said photoacid generator compound cation and an anion. Furthermore, the present invention aims to provide a photoresist composition comprising said photoacid generator and an acid labile polymer. Finally, the present invention relates to a method of generating an acid using the photoresist composition and a method of forming a patterned materials feature on a substrate.

A bismuth compound which is little toxic, insoluble in a monomer, usable for optical purpose and used as a substitute for a lead compound, in which a phosphoric acid ester having a (meth)acrylic group(s) is bonded to bismuth, and a method of producing the bismuth compound by reacting bismuth (meth)acrylate or bismuth subsalicylate with a phosphoric acid ester having a (meth)acrylic group(s) and carrying out dehydration.

The present invention relates to a novel photoacid generator compound cation, comprising an element having for 92 eV photons (extreme ultraviolet (EUV)) an absorption cross section of at least 0.510.sup.7.Math.cm.sup.2/mol; having at least two stable oxidation states; and selected from the elements of group 1 to group 15 of the periodic table of the elements. Additionally, the present invention relates to a photoacid generator comprising said photoacid generator compound cation and an anion. Furthermore, the present invention aims to provide a photoresist composition comprising said photoacid generator and an acid labile polymer. Finally, the present invention relates to a method of generating an acid using the photoresist composition and a method of forming a patterned materials feature on a substrate.

The present invention relates to a novel photoacid generator compound cation, comprising an element having for 92 eV photons (extreme ultraviolet (EUV)) an absorption cross section of at least 0.510.sup.7.Math.cm.sup.2/mol; having at least two stable oxidation states; and selected from the elements of group 1 to group 15 of the periodic table of the elements. Additionally, the present invention relates to a photoacid generator comprising said photoacid generator compound cation and an anion. Furthermore, the present invention aims to provide a photoresist composition comprising said photoacid generator and an acid labile polymer. Finally, the present invention relates to a method of generating an acid using the photoresist composition and a method of forming a patterned materials feature on a substrate.

Organoantimony(V) cyanoximate compounds are disclosed, as well as compositions containing same. Also disclosed are methods of producing and using the organoantimony(V) cyanoximate compounds and compositions.

Organoantimony(V) cyanoximate compounds are disclosed, as well as compositions containing same. Also disclosed are methods of producing and using the organoantimony(V) cyanoximate compounds and compositions.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.