Metal-organic framework materials (MOFs) are highly porous entities comprising a multidentate organic ligand coordinated to multiple metal centers, typically as a coordination polymer. Crystallization may be problematic in some instances when secondary binding sites are present in the multidentate organic ligand. Multidentate organic ligands comprising first and second binding sites bridged together with a third binding site comprising a diimine moiety may alleviate these issues, particularly when using a preformed metal cluster as a metal source to form a MOF. Such MOFs may comprise a plurality of metal centers, and a multidentate organic ligand coordinated to the plurality of metal centers to define an at least partially crystalline network structure having a plurality of internal pores, and in which the multidentate organic ligand comprises first and second binding sites bridged together with a third binding site comprising a diimine moiety. Particular MOFs may comprise N,N′-di(1H-pyrazol-4-yl)ethane-1,2-diimine as a multidentate organic ligand.

An object of a first aspect of the present invention is to provide a radical generating catalyst that can generate (produce) radicals under mild conditions. In order to achieve the above object, a first radical generating catalyst according to the first aspect of the present invention is characterized in that it includes ammonium and/or a salt thereof. A second radical generating catalyst according to the first aspect of the present invention is characterized in that it includes an organic compound having Lewis acidic properties and/or Brønsted acidic properties.

Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: ##STR00001##
where R.sub.1 and R.sub.4 are selected from the group consisting of C4-C10 alkyl groups; and R.sub.2 and R.sub.3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R.sub.2 and R.sub.3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

Provided is a high-entropy composite glycerate represented by NiCrFeCoMn(C.sub.3H.sub.5O.sub.4).sub.n and an electrocatalyst thereof, wherein n is a positive integer from 1 to 3, and wherein each of the Ni, Cr, Fe, Co and Mn includes an atom percent of 5 to 35 based on the total amount of the Ni, Cr, Fe, Co and Mn. Each of the metals is homogenously distributed within the high-entropy composite glycerate, and the high-entropy composite glycerate can reduce an overpotential for oxygen evolution reaction by the synergistic effect resulting from the structure formed by the quinary-metal glycerate. The high-entropy composite glycerate is suitable for catalyzing oxygen evolution reaction, and therefore has a prospect for application. Methods for preparing the high-entropy composite glycerate are also provided.

Mixed metal metal-organic frameworks (MM-MOFs) of copper-1,3,5-benzenetricarboxylate (BTC), M—Cu-BTC, wherein M is Zn(II), Ni(II), Co(II), and/or Fe(II) may be made using post-synthetic exchange (PSE) with metal ions. Such MM-MOFs may be used in H.sub.2 storage, especially Ni(II) and Co(II) MM-MOFs. Selected metal exchanged materials can provide gravimetric H.sub.2 uptake around 1.63 wt. % for Zn—Cu-BTC, around 1.61 wt. % for Ni—Cu-BTC, around 1.63 wt. % for Fe—Cu-BTC, and around 1.12 wt. % for Co—Cu-BTC.

A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late transition metal and an isolation film adjacent thereto, and supplying a reducing gas to selectively form a cobalt metal layer on the wiring line,

##STR00001##

An object of the present invention is to provide a further more effective process for preparing a certain optically active compound including an optically active 1-acetyl-2,2,4-trimethyl-1,2,3,4-tetrahydroquinoline.

The present invention provides a process for an optically active compound represented by formula (3) (wherein R.sup.5 represents a hydrogen atom etc., R.sup.6 and R.sup.7 each independently represents a hydrogen atom, etc., R.sup.8 represents a C1-C6 alkyl group, and R.sup.9, R.sup.10 and R.sup.11 each independently represents a hydrogen atom, etc. The carbon atom with a symbol of the asterisked “*” represents an asymmetric carbon atom),

which comprises a reacting a compound represented by formula (2) (wherein R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10, and R.sup.11 has the same meanings as the above) with hydrogen in the presence of asymmetric cobalt complex.

##STR00001##

The present invention relates to a vapor deposition compound capable of being deposited as a thin film through vapor deposition and, in particular, to: an organometal-containing compound which can be applied to an atomic layer deposition (ALD) method or a chemical vapor deposition (CVD) method and has excellent reactivity, volatility, and thermal stability; a precursor composition comprising the organometallic compound; a method for manufacturing a thin film using the precursor composition; and an organometal-containing thin film manufactured using the precursor composition.

Provided is an ionic solid having pores for incorporating a substance therein.

This disclosure relates to tertiary amine solutions of metal precursors used for chemical vapor deposition or atomic layer deposition. The tertiary amine solutions have many advantages. They dissolve high concentrations of non-polar precursors without reacting with them. They do not supply impurities such as oxygen or halogens to the material being produced, nor do they etch or corrode them. Vaporization rates can be chosen so that the solute and solvent may be evaporated simultaneously, have high flash points, and low flammability. Small droplets may be formed easily which facilitate rapid evaporation without decomposition of he dissolved metal precursor to supply vapors for chemical vapor deposition or atomic layer deposition processes.