Patent classifications
C08F12/32
Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device
There are provided A pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific 3 repeating units.
POLYMERIC MATERIALS FOR CAPTURING FORMALDEHYDE
Sorbent polymeric material suitable for capturing formaldehyde, polymeric material resulting from the capture of formaldehyde by the sorbent polymeric material, and methods for capturing formaldehyde are provided. The sorbent polymeric material has multiple aromatic rings and can be formed by initially preparing a precursor polymeric material from a polymerizable composition that contains a free-radically polymerizable spirobisindane monomer. The precursor polymeric material is subsequently treated with a sulfonyl-containing compound to form groups of formula —SO.sub.2R.sup.5 where each R.sup.5 is independently —NH.sub.2 or —NR.sup.6-Q-NR.sup.6R.sup.7. Each R.sup.6 is hydrogen or an alkyl. Each R.sup.7 is hydrogen or —C(═NH)—NH.sub.2. Each Q is a single bond, alkylene, or a group of formula -(Q.sup.1-NR.sup.6).sub.x-Q.sup.2- where each Q.sup.1 is an alkylene, each Q.sup.2 is an alkylene, and x is in an integer in a range of 1 to 4.
NEW POLYMERS AND THE USE THEREOF FOR DETECTING ION FLUXES
Disclosed are ion-sensitive polymers and methods for their use for monitoring biological phenomena associated with ion fluxes, as well as organic electrochemical transistors including such polymers.
MATERIALS FOR REDUCING ACIDS FROM LIQUID PHASES
Imidazole-containing polymer membranes and resins are described herein. Methods of their preparation and use are also described herein. The methods of using the membranes and resins include reducing acids from liquid phases.
Deoxybenzoin-derived anti-flammable polymers
The invention provides novel flame-retardant polymers and materials, their synthesis and use. More particularly, the flame-retardant polymers are deoxybenzoin-derived polymers.
Deoxybenzoin-derived anti-flammable polymers
The invention provides novel flame-retardant polymers and materials, their synthesis and use. More particularly, the flame-retardant polymers are deoxybenzoin-derived polymers.
ELECTRODE COMPRISING ORGANIC SEMICONDUCTOR MATERIAL, METHOD FOR MANUFACTURING ELECTRODE, AND SUPERCAPACITOR COMPRISING ELECTRODE
The present invention relates to: an electrode comprising a current collector and a film located on the current collector, wherein the film comprises an organic semiconductor material and one selected from a carbon material, a metal oxide and a conductive polymer; a method for manufacturing the electrode; and a supercapacitor comprising the electrode.
Resin composition, dry-etching resist mask, and patterning method
Provided is a curable resin composition for a dry-etching resist, the curable resin composition containing a polymer (A) having, in a side chain, a particular structure including an aromatic group having a vinyl group. The polymer (A) includes 80 to 100 wt % of the particular structure. In addition, provided are a dry-etching resist mask obtained by curing the curable composition for a dry-etching resist, and the dry-etching resist mask having a pattern formed by a nanoimprint method.
Resin composition, dry-etching resist mask, and patterning method
Provided is a curable resin composition for a dry-etching resist, the curable resin composition containing a polymer (A) having, in a side chain, a particular structure including an aromatic group having a vinyl group. The polymer (A) includes 80 to 100 wt % of the particular structure. In addition, provided are a dry-etching resist mask obtained by curing the curable composition for a dry-etching resist, and the dry-etching resist mask having a pattern formed by a nanoimprint method.
ETHER-BASED POLYMERS AS PHOTO-CROSSLINKABLE DIELECTRICS
Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0, 1, 2, 3, 4, 5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Ar.sup.1 and Ar.sup.2 are independently from each other C.sub.6-14-arylene or C.sub.6-14-aryl, which may be substituted with 1 to 4 substituents independently selected from the group consisting of C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-8-cycloalkyl, C.sub.6-14-aryl and 5 to 14 membered heteroaryl, and X.sup.1, X.sup.2 and X.sup.3 are independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer.
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