Disclosed are polymer-based dielectric compositions (e.g., formulations) and materials (e.g. films) and associated devices. The polymers generally include photocrosslinkable pendant groups; for example, the polymers can include one or more coumarin-containing pendant groups.

Disclosed are polymer-based dielectric compositions (e.g., formulations) and materials (e.g. films) and associated devices. The polymers generally include photocrosslinkable pendant groups; for example, the polymers can include one or more coumarin-containing pendant groups.

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin (A) containing a repeating unit represented by General Formula (4) and a crosslinking agent (C) containing a polar group, in which the crosslinking agent (C) is a compound represented by General Formula (1) or a compound in which two to five structures represented by General Formula (1) are connected via a linking group or a single bond represented by L.sub.1 in General Formula (3). ##STR00001##

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin (A) containing a repeating unit represented by General Formula (4) and a crosslinking agent (C) containing a polar group, in which the crosslinking agent (C) is a compound represented by General Formula (1) or a compound in which two to five structures represented by General Formula (1) are connected via a linking group or a single bond represented by L.sub.1 in General Formula (3). ##STR00001##

The present inventive concepts relate to a polymer for a hard mask, a hard mask composition including a polymer for a hard mask as described herein, and a method for forming a pattern of a semiconductor device using a hard mask composition as described herein. The polymer includes a structure represented by the following chemical formula 1. ##STR00001## In chemical formula 1, A, Q, L, R.sub.1, R.sub.2, R.sub.3, and n are the same as defined in the specification.

The present inventive concepts relate to a polymer for a hard mask, a hard mask composition including a polymer for a hard mask as described herein, and a method for forming a pattern of a semiconductor device using a hard mask composition as described herein. The polymer includes a structure represented by the following chemical formula 1. ##STR00001## In chemical formula 1, A, Q, L, R.sub.1, R.sub.2, R.sub.3, and n are the same as defined in the specification.

A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3),

##STR00001##

wherein M.sub.b.sup.+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b),

##STR00002##

This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.

A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3),

##STR00001##

wherein M.sub.b.sup.+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b),

##STR00002##

This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.

The present invention provides a compound shown by the formula (1),

##STR00001##

wherein R.sup.1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group; A represents a single bond or a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group having 3 to 30 carbon atoms, in which the hydrocarbon group may contain a heteroatom, and a part or all of hydrogen atoms in the hydrocarbon group may be substituted with a group containing a heteroatom; n represents 0 or 1, provided that n is 0 when A is a single bond; and M.sup.+ represents a cation. This compound is suitable as a raw material of a polymer compound usable for a base resin of a resist composition that has high resolution and high sensitivity and is excellent in balance of lithography properties such as LWR and CDU.

A tertiary ester-containing aromatic vinyl monomer is prepared by reacting an N-acylimidazole compound with a tertiary alcohol compound in the presence of a metal alkoxide as a reaction promoter. The tertiary ester-containing aromatic vinyl monomer of quality is prepared at a high efficiency and is applicable to resist compositions adapted for the EB and EUV lithography processes.