Patent classifications
C08F222/38
Methods and compositions of localizing nucleic acids to arrays
Methods and compositions are disclosed relating to the localization of nucleic acids to arrays such as silane-free arrays, and of sequencing the nucleic acids localized thereby.
Methods and compositions of localizing nucleic acids to arrays
Methods and compositions are disclosed relating to the localization of nucleic acids to arrays such as silane-free arrays, and of sequencing the nucleic acids localized thereby.
ZWITTERIONIC CROSSLINKERS, HYDROGELS COMPRISING ZWITTERIONIC CROSSLINKERS, AND METHODS FOR MAKING AND USING
Certain disclosed embodiments concern a crosslinker having a Formula I
(Polymerizing Group 1).sub.s-(Amino Acid).sub.u-(Polymerizing Group 2).sub.y Formula I,
where polymerizing group 1 and polymerizing group 2 independently are selected from an acrylate, alkyl acrylate, acrylamide, alkyl acrylamide, acrylonitrile, alkyl acrylonitrile or a (hydroxyalkyl) acrylate; s and y are from 1 to 10, with s and y each typically being 1; the amino acid is any naturally occurring amino acid, any non-naturally occurring amino acid, and any and all combinations thereof; and u is 2 to 100. Crosslinkers may include a naturally occurring amino acid or acids that are selected to provide amino-acid defining functional groups that are zwitterionic at a pH of from 2.5 to 10. Disclosed crosslinkers can also include “internal spacers”, “external spacers,” or both. Crosslinkers according to the present invention are used to make zwitterionic hydrogels that address fouling and bacteria adhesion issues associated with previously known hydrogels. Accordingly, such products are particularly suitable for biomedical applications, such as contact lenses, drug delivery vehicles, tissue engineering platforms, tissue regeneration platforms, catheters, implants and sensors.
Quasicrystalline structures and uses thereof
This invention relates generally to the field of quasicrystalline strictures. In preferred embodiments, the stopgap structure is more spherically symmetric than periodic structures facilitating the formation of stopgaps in nearly all directions because of higher rotational symmetries. More particularly, the invention relates to the use of quasicrystalline structures for optical, mechanical, electrical and magnetic purposes. In some embodiments, the invention relates to manipulating, controlling, modulating and directing waves including electromagnetic, sound, spin, and surface waves, for pre-selected range of wavelengths propagating in multiple directions.
SULFATE-CONTAINING OR PHOSPHATE-CONTAINING, SELF-ADHESIVE DENTAL COMPOSITE CEMENT WITH GOOD TRANSPARENCY
A radical polymerizable composition having at least one acidic radical polymerizable monomer, at least one fluoroaluminosilicate glass filler and/or radiopaque glass filler, and at least one water-soluble sulfate and/or phosphate.
Functional polymer membrane and method of producing the same
A functional polymer membrane having a pore volume fraction of 0.6% or more and 3.0% or less by allowing a reaction of curing a composition containing a polymerizable compound (A) and a copolymerizable monomer (B).
PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
A pattern forming method includes the following steps (a) to (d): (a) applying an actinic ray-sensitive or radiation-sensitive resin composition including a resin capable of increasing a polarity by the action of an acid onto a substrate to form a resist film, (b) forming an upper layer film on the resist film, (c) exposing the resist film having the upper layer film formed thereon, and (d) developing the exposed resist film using an organic developer to form a pattern, in which the resin capable of increasing the polarity by the action of an acid includes an acid-decomposable repeating unit having an acid-leaving group a having 4 to 7 carbon atoms, and the maximum value of the number of carbon atoms and the protection rate of the acid-leaving group a satisfy specific conditions.
PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
A pattern forming method includes the following steps (a) to (d): (a) applying an actinic ray-sensitive or radiation-sensitive resin composition including a resin capable of increasing a polarity by the action of an acid onto a substrate to form a resist film, (b) forming an upper layer film on the resist film, (c) exposing the resist film having the upper layer film formed thereon, and (d) developing the exposed resist film using an organic developer to form a pattern, in which the resin capable of increasing the polarity by the action of an acid includes an acid-decomposable repeating unit having an acid-leaving group a having 4 to 7 carbon atoms, and the maximum value of the number of carbon atoms and the protection rate of the acid-leaving group a satisfy specific conditions.
Hydrophobic diacrylamide compound
A silyl protected diacrylamide compound is described. A method of forming such a compound includes mixing a silylation reagent with a hydroxylated diamine compound under first reactive conditions to form a product in a first solution, separating the product from the first solution, and mixing the product with acryloyl chloride under second reactive conditions in a second solution to form a silyl protected diacrylamide compound.
HYDROGELS, METHODS OF FABRICATION AND USES THEREOF
The present invention relates, in general terms, to hydrogels and their uses thereof. The hydrogels demonstrate toughness; i.e. the ability to absorb energy and plastically deform without fracturing. The present invention also relates to methods of fabricating hydrogels. In particular, the method of fabricating a tough hydrogel comprises polymerising a plurality of charged monomers in the presence of multivalent ions in order to form an ion impregnated hydrogel and exposing the ion impregnated hydrogel to heat in order to form the tough hydrogel.