A method produces a substrate shielded from electromagnetic radiation. The method includes i) providing a first polymer material (a) or a precursor thereof containing at least one conductive filler and at least a second polymer material (b) or precursor thereof; ii) obtaining a substrate by subjecting the first polymer material (a) or the precursor thereof and the second polymer material (b) or the precursor thereof to shaping with material bonding of the first polymer material (a) and the second polymer material (b), and polymerizing, if present, the precursors; and iii) at least partially surrounding an electronic component with the substrate obtained in step ii). A polymer component of the first polymer material (a) includes a thermoplastic elastomer or at least one thermoplastic elastomer, selected from the group consisting of, e.g., thermoplastic polyamide elastomers, thermoplastic copolyester elastomers, thermoplastic olefin-based elastomers, thermoplastic styrene block copolymers, polyether block amides, and mixtures thereof.

A method produces a substrate shielded from electromagnetic radiation. The method includes i) providing a first polymer material (a) or a precursor thereof containing at least one conductive filler and at least a second polymer material (b) or precursor thereof; ii) obtaining a substrate by subjecting the first polymer material (a) or the precursor thereof and the second polymer material (b) or the precursor thereof to shaping with material bonding of the first polymer material (a) and the second polymer material (b), and polymerizing, if present, the precursors; and iii) at least partially surrounding an electronic component with the substrate obtained in step ii). A polymer component of the first polymer material (a) includes a thermoplastic elastomer or at least one thermoplastic elastomer, selected from the group consisting of, e.g., thermoplastic polyamide elastomers, thermoplastic copolyester elastomers, thermoplastic olefin-based elastomers, thermoplastic styrene block copolymers, polyether block amides, and mixtures thereof.

A main purpose of the present invention is to provide a multi-block copolymer composition having good elasticity and excellent stress relaxation properties, as well as small tension set. The present invention achieves the purpose by providing a multi-block copolymer composition obtained by a modification treatment, the composition including a block copolymer B formed by introducing a functional group capable of forming a non-covalent bond to a block copolymer A; wherein the block copolymer A includes a block copolymer A1 having a specific primary structure and a block copolymer A2 having a specific primary structure, and the mass ratio (A1/A2) of the block copolymer A1 and the block copolymer A2 is 100/0 to 50/50.

A main purpose of the present invention is to provide a multi-block copolymer composition having good elasticity and excellent stress relaxation properties, as well as small tension set. The present invention achieves the purpose by providing a multi-block copolymer composition obtained by a modification treatment, the composition including a block copolymer B formed by introducing a functional group capable of forming a non-covalent bond to a block copolymer A; wherein the block copolymer A includes a block copolymer A1 having a specific primary structure and a block copolymer A2 having a specific primary structure, and the mass ratio (A1/A2) of the block copolymer A1 and the block copolymer A2 is 100/0 to 50/50.

A main purpose of the present invention is to provide a multi-block copolymer composition having good elasticity and excellent stress relaxation properties, as well as small tension set. The present invention achieves the purpose by providing a multi-block copolymer composition obtained by a modification treatment, the composition including a block copolymer B formed by introducing a functional group capable of forming a non-covalent bond to a block copolymer A; wherein the block copolymer A includes a block copolymer A1 having a specific primary structure and a block copolymer A2 having a specific primary structure, and the mass ratio (A1/A2) of the block copolymer A1 and the block copolymer A2 is 100/0 to 50/50.

A block copolymer including a polymer block (A) containing more than 70 mol % of a unit derived from an aromatic vinyl compound, and a polymer block (B) containing 30 mol % or more of a unit derived from a conjugated diene compound is provided. The block copolymer satisfies the conditions: (1): a content of the polymer block (A) in the block copolymer is 1 to 70% by mass; (2): a maximum width of a series of temperature regions where tan δ measured in accordance with JIS K7244-10 (2005), under conditions including a strain amount of 0.1%, a frequency of 1 a measurement temperature of −70 to 100° C., and a temperature rise rate of 3° C./min, is 1.0 or more is less than 16° C.; (3): a temperature at a peak position of tan δ in the condition (2) is 0° C. to +50° C.; and (4): a mobility parameter M indicating a mobility of the polymer block (B) is 0.01 to 0.25 sec.

A block copolymer including a polymer block (A) containing more than 70 mol % of a unit derived from an aromatic vinyl compound, and a polymer block (B) containing 30 mol % or more of a unit derived from a conjugated diene compound is provided. The block copolymer satisfies the conditions: (1): a content of the polymer block (A) in the block copolymer is 1 to 70% by mass; (2): a maximum width of a series of temperature regions where tan δ measured in accordance with JIS K7244-10 (2005), under conditions including a strain amount of 0.1%, a frequency of 1 a measurement temperature of −70 to 100° C., and a temperature rise rate of 3° C./min, is 1.0 or more is less than 16° C.; (3): a temperature at a peak position of tan δ in the condition (2) is 0° C. to +50° C.; and (4): a mobility parameter M indicating a mobility of the polymer block (B) is 0.01 to 0.25 sec.

Polar modifier systems based on a blend of DTHFP, ETE, TMEDA, DMTHFMA and/or functionally similar compounds with BDMAEE and SMT are used to make block copolymers having high levels of pendant vinyl double bond repeat units, which is through highly selective 1,2-bond butadiene addition, low vinylcyclopentane formation, unimodal narrow molecular weight distribution, and a low level of randomized co-monomer repeat units. The block copolymers have very high levels of 1,2-vinyl content and high 3,4-vinyl bond addition of the conjugated diene monomer and low vinylcyclopentane content. The polar modifier systems provide a fast polymerization rate, with a unimodal narrow molecular weight distribution. The polar modifier systems allow operation at a higher temperature than in prior art systems, which reduces cooling requirements.

Polar modifier systems based on a blend of DTHFP, ETE, TMEDA, DMTHFMA and/or functionally similar compounds with BDMAEE and SMT are used to make block copolymers having high levels of pendant vinyl double bond repeat units, which is through highly selective 1,2-bond butadiene addition, low vinylcyclopentane formation, unimodal narrow molecular weight distribution, and a low level of randomized co-monomer repeat units. The block copolymers have very high levels of 1,2-vinyl content and high 3,4-vinyl bond addition of the conjugated diene monomer and low vinylcyclopentane content. The polar modifier systems provide a fast polymerization rate, with a unimodal narrow molecular weight distribution. The polar modifier systems allow operation at a higher temperature than in prior art systems, which reduces cooling requirements.

Polar modifier systems based on a blend of DTHFP, ETE, TMEDA, DMTHFMA and/or functionally similar compounds with BDMAEE and SMT are used to make block copolymers having high levels of pendant vinyl double bond repeat units, which is through highly selective 1,2-bond butadiene addition, low vinylcyclopentane formation, unimodal narrow molecular weight distribution, and a low level of randomized co-monomer repeat units. The block copolymers have very high levels of 1,2-vinyl content and high 3,4-vinyl bond addition of the conjugated diene monomer and low vinylcyclopentane content. The polar modifier systems provide a fast polymerization rate, with a unimodal narrow molecular weight distribution. The polar modifier systems allow operation at a higher temperature than in prior art systems, which reduces cooling requirements.