A resist underlayer film-forming composition that exhibits a high etching resistance, a favorable dry etching rate ratio and optical constant, and can form a film exhibiting a good coatability even to a so-called uneven substrate, providing a small difference in film thickness after embedding, and having planarity and a superior hardness; a resist underlayer film formed from the resist underlayer film-forming composition; and a method of producing a semiconductor device. The composition including a reaction product between a compound of the following Formula (1) or (2) and a compound of the following Formula (3), and a solvent:

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The present invention relates to reaction products H of at least one cyclic urea U, at least one multifunctional aldehyde A and at least one polyol P, process for preparing thereof and compositions comprising thereof.

The present invention relates to reaction products H of at least one cyclic urea U, at least one multifunctional aldehyde A and at least one polyol P, process for preparing thereof and compositions comprising thereof.

A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):

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wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B.sup.1 and B.sup.2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B.sup.1 and B.sup.2 optionally form a ring with a carbon atom bonded to B.sup.1 and B.sup.2.

The present invention relates to reaction products H of at least one cyclic urea U, at least one multifunctional aldehyde A and at least one polyol P, process for preparing thereof and compositions comprising thereof.

Provided is a method for producing a polymer for an electronic material having a low content of metal ion impurities and a polymer for an electronic material obtained by such method.

The method for producing a polymer for an electronic material according to the present invention comprises a polymerization step of obtaining a polymer by polymerizing a monomer(s) and a purification step of adding a strong acid having 0 or less pKa to the polymer solution and subsequently performing an ion exchange treatment to reduce the concentration of the metal ion impurities.

Provided is a method for producing a polymer for an electronic material having a low content of metal ion impurities and a polymer for an electronic material obtained by such method.

The method for producing a polymer for an electronic material according to the present invention comprises a polymerization step of obtaining a polymer by polymerizing a monomer(s) and a purification step of adding a strong acid having 0 or less pKa to the polymer solution and subsequently performing an ion exchange treatment to reduce the concentration of the metal ion impurities.

Polymeric reaction products of certain substituted tetraarylmethane monomers are useful as underlayers in semiconductor manufacturing processes.