The invention provides a polymer comprising two or more residues of formula III or IV or salts thereof: wherein dash line, X, Y, Q, L, M, n, R.sup.1, R.sup.2, R.sup.a, R.sup.b, R.sup.c and R.sup.d have any of the values defined in the specification, as well as synthetic intermediates and synthetic methods useful for preparing the compounds. The polymer is useful to treat contaminated water by chelating metal. ##STR00001##

The present specification relates to a polymer and an organic solar cell including the same.

The present specification relates to a polymer and an organic solar cell including the same.

The present invention relates to organic copolymers and organic semiconducting compositions comprising these materials, including layers and devices comprising such organic semiconductor compositions. The invention is also concerned with methods of preparing such organic semiconductor compositions and layers and uses thereof. The invention has application in the field of printed electronics and is particularly useful as the semiconducting material for use in formulations for organic thin film transistor (OFET) backplanes for displays, integrated circuits, organic light emitting diodes (OLEDs), photodetectors, organic photovoltaic (OPV) cells, sensors, memory elements and logic circuits.

The present invention relates to organic copolymers and organic semiconducting compositions comprising these materials, including layers and devices comprising such organic semiconductor compositions. The invention is also concerned with methods of preparing such organic semiconductor compositions and layers and uses thereof. The invention has application in the field of printed electronics and is particularly useful as the semiconducting material for use in formulations for organic thin film transistor (OFET) backplanes for displays, integrated circuits, organic light emitting diodes (OLEDs), photodetectors, organic photovoltaic (OPV) cells, sensors, memory elements and logic circuits.

An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100 C. to no more than the lower of 250 C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.

An improved process for forming a conjugated thiophene precursor is described as in the formation of an improved polymer prepared from the conjugated thiophene and an improved capacitor formed from the improved polymer. The improved process includes forming a thiophene mixture comprising thiophene monomer, unconjugated thiophene oligomer, optionally a solvent and heating the thiophene mixture at a temperature of at least 100 C. to no more than the lower of 250 C. or the boiling point of a component of said thiophene mixture with the lowest boiling point temperature.

The present invention provides a method for producing a conductive polymer-containing dispersion, including: a polymerization step of polymerizing a monomer for obtaining a conjugated conductive polymer in a dispersion medium including the monomer and seed particles converted into a colloid protected by a polyanion.

The present invention provides a method for producing a conductive polymer-containing dispersion, including: a polymerization step of polymerizing a monomer for obtaining a conjugated conductive polymer in a dispersion medium including the monomer and seed particles converted into a colloid protected by a polyanion.

The present invention provides a composition for an optical material containing a ring compound (a) represented by formula (1), an episulfide compound (b), and sulfur (c), wherein the content of the ring compound (a) in the composition for an optical material is in the range of 5-70 mass %, the content of the episulfide compound (b) is in the range of 20-90 mass %, and the content of the sulfur (c) is in the range of 1-39 mass %. (In the formula, X represents S, Se or Te. a to f=0 to 3, 8(a+c+e)1, 8(b+d+f)2, and (b+d+f)(a+c+e).) This composition for an optical material has a high refractive index as an optical characteristic, and has sufficient heat resistance and good mold release characteristics. ##STR00001##