Patent classifications
C08G77/56
SELF-HEALING ELASTOMERS AND METHOD OF MAKING THE SAME
The invention relates to a method for manufacturing a self-healing elastomer, comprising preparing, with respect to the total weight of the self-healing elastomer, 0.1-5 wt. % of boron trioxide (B.sub.2O.sub.3), 65-90 wt. % of hydroxyl-terminated polydimethylsiloxane (PDMS-OH), 5-30 wt. %, when measured in combined, of polysiloxane precursors, being a first composition comprising a siloxane base, and a second composition comprising a siloxane crosslinker, wherein the ratio by weight of the first composition and the second composition is 1:1 to 50:1; reacting B.sub.2O.sub.3 and PDMS-OH at an elevated temperature ranging from 60? C. to 200? C., endpoints inclusive, thereby obtaining a first mixture, mixing the first mixture with an alcohol, and then the first composition, thereby obtaining a second mixture, reacting the second mixture and the second composition, thereby obtaining the self-healing elastomer.
SELF-HEALING ELASTOMERS AND METHOD OF MAKING THE SAME
The invention relates to a method for manufacturing a self-healing elastomer, comprising preparing, with respect to the total weight of the self-healing elastomer, 0.1-5 wt. % of boron trioxide (B.sub.2O.sub.3), 65-90 wt. % of hydroxyl-terminated polydimethylsiloxane (PDMS-OH), 5-30 wt. %, when measured in combined, of polysiloxane precursors, being a first composition comprising a siloxane base, and a second composition comprising a siloxane crosslinker, wherein the ratio by weight of the first composition and the second composition is 1:1 to 50:1; reacting B.sub.2O.sub.3 and PDMS-OH at an elevated temperature ranging from 60? C. to 200? C., endpoints inclusive, thereby obtaining a first mixture, mixing the first mixture with an alcohol, and then the first composition, thereby obtaining a second mixture, reacting the second mixture and the second composition, thereby obtaining the self-healing elastomer.
Temperature-resistant silicone resins
Methods and formulations for modified silicone resins of Formula (II) are presented. Formula (II) comprises at least one of each of the following subunits: ##STR00001##
The R.sup.1, R.sup.2, R.sup.3, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10, R.sup.11, R.sup.12 and R.sup.13 are each independently selected from a group consisting of H, alkyl, alkenyl, alkynyl, and aryl. The X is selected from a group consisting of arylene, transition metal, inorganic oxide, and silsesquioxane. The values of t ranges from 1 to 10, y ranges from 1 to 200 and z ranges from 1 to 1,000. The elastomeric materials prepared from modified silicone resins display robust mechanical properties following prolonged exposure to high temperatures (e.g., 316 C. or higher).
Temperature-resistant silicone resins
Methods and formulations for modified silicone resins of Formula (II) are presented. Formula (II) comprises at least one of each of the following subunits: ##STR00001##
The R.sup.1, R.sup.2, R.sup.3, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10, R.sup.11, R.sup.12 and R.sup.13 are each independently selected from a group consisting of H, alkyl, alkenyl, alkynyl, and aryl. The X is selected from a group consisting of arylene, transition metal, inorganic oxide, and silsesquioxane. The values of t ranges from 1 to 10, y ranges from 1 to 200 and z ranges from 1 to 1,000. The elastomeric materials prepared from modified silicone resins display robust mechanical properties following prolonged exposure to high temperatures (e.g., 316 C. or higher).
FUNCTIONALIZED SILOXANE POLYMERS AND COMPOSITIONS COMPRISING SAME
A siloxane polymer. A composition including the polymer. A method of treating and/or cleaning a situs using the same.
Inorganic composition for transferring a fine unevenness
Disclosed is an inorganic composition for transferring a fine unevenness by which a fine unevenness made of an inorganic material capable of controlling a refractive index can be fabricated through a suitable transfer process. The composition according to the present invention contains a silicone compound and at least two types of metal alkoxides, wherein the metal alkoxides include a metal alkoxide having a metal species M1 (where M1 denotes at least one metal element selected from a group consisting of Ti, Zr, Zn, Sn, B, In, and Al) and a metal alkoxide having a metal species Si. In addition, a ratio between a molarity C.sub.M1 of the metal alkoxide having the metal species M1 and a molarity C.sub.Si of the metal alkoxide having the metal species Si in the inorganic composition for transferring a fine unevenness satisfies a condition of 0.2C.sub.M1/C.sub.Si24.
Inorganic composition for transferring a fine unevenness
Disclosed is an inorganic composition for transferring a fine unevenness by which a fine unevenness made of an inorganic material capable of controlling a refractive index can be fabricated through a suitable transfer process. The composition according to the present invention contains a silicone compound and at least two types of metal alkoxides, wherein the metal alkoxides include a metal alkoxide having a metal species M1 (where M1 denotes at least one metal element selected from a group consisting of Ti, Zr, Zn, Sn, B, In, and Al) and a metal alkoxide having a metal species Si. In addition, a ratio between a molarity C.sub.M1 of the metal alkoxide having the metal species M1 and a molarity C.sub.Si of the metal alkoxide having the metal species Si in the inorganic composition for transferring a fine unevenness satisfies a condition of 0.2C.sub.M1/C.sub.Si24.
Curable Organosiloxane Resins Containing Boron
The invention relates to a curable composition showing antimicrobial activity in cured state, the composition comprising (A) at least one boron containing siloxane resin consisting of constitutional units of formula (I)
(YZ).sub.nSiR.sup.1.sub.mX.sub.pO.sub.q(I) wherein: R.sup.1 groups may be the same or different and each is independently selected from a hydrogen atom or a linear, branched, or cyclic hydrocarbon residue having 1 to 20 carbon atoms which may contain at least one heteroatom; X is a hydrolysable group, including, but not limited to OH (hydroxy), Cl, Br, I, or OR.sup.2 (alkoxy or aryloxy), wherein R.sup.2 is a linear, branched or cyclic hydrocarbon residue having 1 to 20 carbon atoms which may contain at least one heteroatom; Z is selected from a linear, branched or cyclic hydrocarbon residue having 2 to 60 carbon atoms which may contain at least one heteroatom; Y is a boron containing group; n, and q are integers from 1 to 3, and m and p are integers from 0 to 2 wherein n+m+p+q=4; (B) optionally, at least one curing catalyst.
The invention also relates to an adhesive, sealant, or coating material comprising the curable composition and to use of the curable composition as an adhesive, sealant, or coating material.
Composition for forming a coating type BPSG film, substrate, and patterning process
A composition for forming a coating type BPSG film, containing one or more silicic acid skeletal structures represented by formula (1), one or more phosphoric acid skeletal structures represented by formula (2), one or more boric acid skeletal structures represented by formula (3), and one or more silicon skeletal structures represented by formula (4), wherein the composition contains a coupling between units in formula (4). The composition is capable of forming a BPSG film that has excellent adhesiveness in fine patterning, can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly consisting of carbon which is required in the patterning process, can maintain the peelability even after dry etching, and can suppress generation of particles by forming it in the coating process. ##STR00001##
Method for Modifying and Controlling the Threshold Voltage of Thin Film Transistors
Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.