A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

Provided are a random copolymer for forming a neutral layer promoting directed self-assembly pattern formation, a laminate for forming a pattern including the same, and a method for forming a high-quality pattern using the same.

A method of forming a resist pattern includes: a step of forming a resist film using a positive resist composition containing a solvent and a polymer including monomer units represented by the following formulae (I) and (II), respectively; an exposure step; a development step; and a step of rinsing the developed resist film using a rinsing liquid having a surface tension of 20.0 mN/m or less. In formula (I), R.sup.1 is an organic group including 3 to 7 fluorine atoms. In formula (II), R.sup.2 is a hydrogen atom, a fluorine atom, or an unsubstituted or fluorine atom-substituted alkyl group, R.sup.3 is a hydrogen atom or an unsubstituted or fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5. ##STR00001##

Described herein is a multi-phase polymer binder including an aqueous polymer dispersion, an optional hydrophobic emulsion, and an optional surfactant. The polymer binder, when dried, provides a water uptake of less than about 5 g/m.sup.2/20 min, a seal strength of at least about 200 Newton/meter (N/m) as measured at 25° C. or at 90° C., and sufficient block resistance to impart no substrate damage.

Described herein is a multi-phase polymer binder including an aqueous polymer dispersion, an optional hydrophobic emulsion, and an optional surfactant. The polymer binder, when dried, provides a water uptake of less than about 5 g/m.sup.2/20 min, a seal strength of at least about 200 Newton/meter (N/m) as measured at 25° C. or at 90° C., and sufficient block resistance to impart no substrate damage.

An underlayer film-forming composition which exhibits excellent solvent resistance, and which is capable of orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer formed on the substrate, said layer including a block copolymer. The underlayer film-forming composition includes a copolymer which includes: (A) unit structures derived from styrene compounds including tert-butyl groups; (B) unit structures, other than those in (A) above, which are derived from aromatic-containing vinyl compounds which do not include hydroxy groups; (C) unit structures derived from compounds which include (meth)acryloyl groups, and do not include hydroxy groups; and (D) unit structures derived from compounds including crosslink-forming groups. The copolymerization ratios with respect to the whole copolymer are: (A) 25-90 mol %; (B) 0-65 mol %; (C) 0-65 mol %; and (D) 10-20 mol %. Unit structures including aromatics account for 81-90 mol % of (A)+(B)+(C).

The present invention relates to a novel styrenic polymer comprised of the repeat units of structures (I), (II), and (III), wherein R.sub.1, R.sub.2 and R.sub.3 are individually selected from H or a C-1 to C-4 linear alkyl, R.sub.5, R.sub.7 and R.sub.6 are individually selected from a C-1 to C-8 linear alkyl, a C-3 to C-8 linear alkyl and a C-3 to C-8 cyclic alkyl and to the novel composition comprised of this polymer and a spin on organic solvent. In another aspect of this invention it pertains to the use of this composition to create a grafted on a substrate, and a further aspect, this grafted film may be used in a directed self-assembly process. ##STR00001##

In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.

In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.