Patent classifications
C09K3/1454
Polishing compositions and methods of using same
This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C.sub.4 to C.sub.40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.
Composition including a plurality of abrasive particles and method of using same
A composition having a plurality of abrasive particles including alumina, the plurality of abrasive particles have mesoporosity with an average meso branching index of at least 55 junctions/microns.sup.2 and a median particle size (D50) of at least 5 microns.
Methods for fabricating a chemical-mechanical polishing composition
Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.
Aqueous compositions of stabilized aminosilane group containing silica particles
The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions have excellent heat aging and shelf stability in the form of concentrates comprising a mixture of a compound containing two quaternary ammonium groups, such as hexabutyl C.sub.1-C.sub.8 alkanediammonium dihydroxides or salts thereof, preferably N,N,N,N′,N′,N′-hexabutyl-1,4-butanediammonium dihydroxide (HBBAH), and aminosilane group containing silica particles in the amount of from 1 to 30 wt. % or, preferably, from 15 to 22 wt. %, as solids based on the total weight of the composition, the composition having a pH ranging from 3 to 5 or, preferably, from 3.5 to 4.5 wherein the composition is stable against visible precipitation or sedimentation at a 15 wt. % solids content after heat aging at a temperature of 45° C. for at least 6 days.
Etching composition for silicon nitride layer and method of etching silicon nitride layer using the same
An etching composition for silicon nitride layers and a method of etching a silicon nitride layer using the composition, the etching composition including an inorganic acid or a salt thereof; a solvent; an acid-modified silica or an acid-modified silicic acid; and a cyclic compound containing four or more nitrogen atoms.
Aqueous compositions of low abrasive silica particles
The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.
Composite Particles, Method of Refining and Use Thereof
Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.
SLURRY AND POLISHING METHOD
A slurry for polishing a carbon-containing silicon oxide, the slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, a particle size of the second particles is smaller than a particle size of the first particles, the first particles contain cerium oxide, and the second particles contain a cerium compound.
BLASTING ABRASIVES AND METHOD OF PRODUCING BLASTING ABRASIVES
Blasting abrasives comprise a plurality of particles. Blasting abrasives are classified into two basic types with many varieties of particles within these categories. Sharp, angular, and blocky abrasives and bead and/or rounded abrasives. Blasting abrasives are describe that are made from mixing particles of sharp, angular or blocky abrasives with bead or round abrasives. The blasting performance of any sharp, angular, or blocky abrasive may be improved by combining it with the bead or round abrasives in concentrations from 0.1 wt. % to 50 wt. %.
Nano-diamond dispersion solution and method for preparing same
The present invention relates to a nano-diamond dispersion solution and a method of preparing the same. The method of preparing a nano-diamond dispersion solution comprises the following steps: providing a nano-diamond aggregation; mixing the nano-diamond aggregation with a metal hydroxide solution and stirring the mixture such that the nano-diamond aggregation is separated, to obtain a mixture solution; stabilizing the mixture solution such that the mixture solution is separated into a supernatant and precipitates; and extracting the supernatant and precipitates.