A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×10.sup.1 to 1.5×10.sup.3 per mL.

Abrasives, a polishing composition, and a polishing method that can reduce undulation of an outer surface of a resin coating by polishing with reduced occurrence of polishing flaws. The polishing composition includes abrasives of aluminium oxide particles having a specific surface area of 5 m.sup.2/g or more and 50 m.sup.2/g or less and an average secondary particle diameter of 0.05 μm or more and 4.8 μm or less. This polishing composition can be used for polishing an outer surface of the resin coating.

A slurry scraping mechanism and an applying and scraping device used in an SG abrasive production process includes a scraping master support; a scraper, wherein the scraper is connected with the scraping master support through a suspension component such that the scraper is suspended, and a damping spring is arranged in the suspension component; and a torsion spring adjusting component, wherein the torsion spring adjusting component includes a plurality of torsion springs supported by a torsion spring support shaft, the torsion spring support shaft is fixed to the scraping master support, the torsion spring support shaft is movable up and down relative to the scraping master support, the torsion springs are clamped in a V-shaped plate, an end side of the V-shaped plate is connected with the scraping master support, and a side surface of the V-shaped plate is connected with the scraper.

A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.

The invention is an abrasive article for sharpening cutting blades mounted within a grinding apparatus. The article is a soft matrix in which are embedded abrasive particles, and this matrix is preferably encased within a dry and non-adherent shell or capsule. The article is capable of being fed into the apparatus, wherein it is crushed, leaving the abrasive particles free to contact and sharpen the blades by abrasion.

Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. For example, a stack structure is formed in a staircase region and a core array region. The stack structure includes a plurality of interleaved first material layers and second material layers. Edges of the interleaved first material layers and second material layers define a staircase structure on a side of the stack structure in the staircase region. A dielectric layer is formed over the staircase region and a peripheral region outside the stack structure. The dielectric layer includes a protrusion from the stack structure. The dielectric layer is polished using an auto-stop slurry to remove the protrusion of the dielectric layer.

A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

According to an aspect of the present invention, there is provided a polishing liquid containing abrasive grains, a hydroxy acid, a polyol, at least one zwitterionic compound selected from the group consisting of an aminocarboxylic acid and an aminosulfonic acid, and a liquid medium, in which a zeta potential of the abrasive grains is positive, an isoelectric point of the aminocarboxylic acid is smaller than 7.0, and pKa of the aminosulfonic acid is larger than 0.

This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C.sub.4 to C.sub.40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.